Horizontal gate all around device nanowire air gap spacer formation
Embodiments provide apparatuses and methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one embodiments, a nanowire structure is provided and includes a stack containing repeating pairs of a first layer and a second layer and having a first side and a second side opposite from the first side, a gate structure surrounding the stack, a source layer adjacent to the first side, and a drain layer adjacent to the second side. The stack also contains one or more gaps disposed between the source layer and the second layer and having a dielectric constant value of about 1 and one or more gaps disposed between the drain layer and the second layer and having a dielectric constant value of about 1.
1. A nanowire structure, comprising:
a stack comprising repeating pairs of a first layer and a second layer, wherein the stack has a first side and a second side opposite from the first side;
a gate structure surrounding the stack;
a source layer adjacent to the first side;
a drain layer adjacent to the second side;
gaps disposed between the source layer and each of the second layers and disposed between the drain layer and each of the second layers; and
a dielectric material disposed on the first layer and the second layer within the gaps.
2. The nanowire structure of claim 1 , wherein each of the gaps contains at least one of hydrogen, oxygen, argon, nitrogen, helium, or a mixture thereof.
3. The nanowire structure of claim 2 , wherein each of the gaps contains oxygen, nitrogen, and at least one of hydrogen, helium, or a mixture thereof.
4. The nanowire structure of claim 1 , wherein each of the first layers is a silicon layer and each of the second layers is a SiGe layer.
5. The nanowire structure of claim 1 , wherein the stack includes at least four repeating pairs of the first layer and the second layer.
6. The nanowire structure of claim 1 , wherein each of the gaps has a dielectric constant value of about 1.
7. The nanowire structure of claim 1 , wherein the dielectric material comprises silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbide, silicon carbonitride, silicon oxycarbonitride, silicon materials with dopants, nitrides, oxynitrides, or a mixture thereof.
8. The nanowire structure of claim 7 , wherein the dielectric material comprises silicon nitride, silicon oxide, or silicon oxynitride.
9. The nanowire structure of claim 1 , wherein the dielectric material comprises a silicon oxynitride layer with a thickness of about 5 Å to about 50 Å.
10. The nanowire structure of claim 1 , wherein the dielectric material was produced by an atomic layer deposition process.
11. The nanowire structure of claim 1 , wherein the stack is located on a material layer comprising silicon oxide, silicon nitride, or silicon oxynitride.
12. The nanowire structure of claim 11 , wherein the material layer is located on a substrate comprising silicon.
13. A nanowire structure, comprising:
a stack located on a substrate, wherein the stack comprises repeating pairs of a first layer and a second layer, and wherein the stack has a first side and a second side opposite from the first side;
a gate structure surrounding the stack;
a source layer adjacent to the first side;
a drain layer adjacent to the second side;
gaps disposed between the source layer and each of the second layers and disposed between the drain layer and each the second layers, wherein each of the gaps has a dielectric constant value of about 1; and
a dielectric material disposed on the first layer and the second layer within the gaps.
14. The nanowire structure of claim 13 , wherein each of the gaps contains at least one of hydrogen, oxygen, argon, nitrogen, helium, or a mixture thereof.
15. The nanowire structure of claim 14 , wherein each of the gaps contains oxygen, nitrogen, and at least one of hydrogen, helium, or a mixture thereof.
16. The nanowire structure of claim 13 , wherein the dielectric material comprises silicon nitride, silicon oxide, or silicon oxynitride.
17. The nanowire structure of claim 13 , wherein the dielectric material has a thickness of about 5 Å to about 50 Å and was produced by an atomic layer deposition process.
18. The nanowire structure of claim 13 , wherein each of the first layers is a silicon layer and each of the second layers is a SiGe layer.
19. The nanowire structure of claim 13 , wherein the stack includes at least four repeating pairs of the first layer and the second layer.
20. A nanowire structure, comprising:
a stack comprising repeating pairs of a first layer and a second layer, wherein the stack has a first side and a second side opposite from the first side, and wherein the stack includes at least four repeating pairs of the first layer and the second layer;
a gate structure surrounding the stack;
a source layer adjacent to the first side;
a drain layer adjacent to the second side;
gaps disposed between the source layer and each of the second layers and disposed between the drain layer and each the second layers, wherein each of the gaps has a dielectric constant value of about 1; and
a dielectric material disposed on the first layer and the second layer within the gaps.