Spin-based detection of terahertz and sub-terahertz electromagnetic radiation

1. A electromagnetic radiation detector, comprising:

a heterostructure including a first layer including an antiferromagnetic material (AFM) in contact with a second layer including a heavy metal (HM) or a topological insulator;

a magnetic field generator configured to generate a magnetic field having a direction oriented approximately parallel to an easy axis of the crystal lattice of the first layer and a direction of propagation of incident electromagnetic radiation; and

an electrical circuit in electrical communication with the second layer;

wherein the first layer is configured to inject a spin current into the second layer in response to receipt of electromagnetic radiation having a frequency within the range of sub-terahertz or terahertz frequencies;

wherein the second layer is configured to generate a potential difference in response to receipt of the spin current; and

wherein the circuit is configured to output an electrical signal corresponding to the potential difference.

2. The detector of claim 1 , wherein the electromagnetic radiation has a frequency within the range from about 100 GHz to about 10 THz.

3. The detector of claim 1 , wherein the material forming the first layer is one of MnO, α-Fe 2 O 3 , MnS, CrSe, FeS, MnTe, RbMnTe 2 , MnF 2 , NiF 2 , CoF 2 , FeF 2 , FeCl 2 , FeI 2 , FeO, FeOCl, CoCl 2 , CrCl 2 , CoO, NiCl 2 , Nile, NiO, Cr, Cr 2 O 3 , LaMnO 3 , or Nd 5 Ge 3 .

4. The detector of claim 1 , wherein the material second layer is a heavy metal including one of Pt, W, Bi, Ta, or a AuPt alloy.

5. The detector of claim 1 , wherein the material forming the second layer has a spin Hall angle greater than or equal to 0.1.

6. The detector of claim 1 , wherein the thickness of the first layer is within the range of about 10 nm to about 100 nm.

7. The detector of claim 1 , wherein the thickness of the second layer is within the range of about 2 nm to about 10 nm.

8. The detector of claim 1 , wherein the magnetic field generator is a ferromagnetic layer, wherein the second layer is positioned in contact with a first side of the first layer, and wherein the ferromagnetic layer is positioned on a second side of the first layer, opposite the second layer.

9. The detector of claim 8 , wherein an easy axis of the ferromagnetic layer is approximately perpendicular to the plane of the ferromagnetic material.

10. The detector of claim 1 , wherein the first layer is strained at a level that changes the frequency within the range of sub-terahertz or terahertz frequencies at which the first layer injects spin current into the second layer as compared to the first layer in an unstrained state.

11. A method of detecting electromagnetic radiation, comprising:

receiving electromagnetic radiation having a frequency within the range of sub-terahertz or terahertz frequencies by a heterostructure, wherein the heterostructure including a first layer of an antiferromagnetic material (AFM) in contact with a second layer of a heavy metal (HM) or a topological insulator;

generating a magnetic field having a direction oriented approximately parallel to an easy axis of the crystal lattice of the first layer and a direction of propagation of the electromagnetic field; and

generating, within the first layer, a spin current in response to receipt of the electromagnetic radiation;

receiving, by the second layer, the spin current;

generating, within the second layer, a potential difference in response to receipt of the spin current; and

outputting, by an electrical circuit in electrical communication with the second layer, an electrical signal corresponding to the potential difference.

12. The method of claim 11 , wherein the electromagnetic radiation has a frequency within the range from about 100 GHz to about 10 THz.

13. The method of claim 11 , wherein the material forming the first layer is one of MnO, α-Fe 2 O 3 , MnS, CrSe, FeS, MnTe, RbMnTe 2 , MnF 2 , NiF 2 , CoF 2 , FeF 2 , FeCl 2 , FeI 2 , FeO, FeOCl, CoCl 2 , CrCl 2 , CoO, NiCl 2 , Nile, NiO, Cr, Cr 2 O 3 , LaMnO 3 , or Nd 5 Ge 3 .

14. The method of claim 11 , wherein the material second layer is a heavy metal including one of Pt, W, Bi, Ta, or a AuPt alloy.

15. The method of claim 11 , wherein the material forming the first layer has a spin Hall angle greater than or equal to 0.1.

16. The method of claim 11 , wherein the thickness of the first layer is within the range of about 10 nm to about 100 nm.

17. The method of claim 11 , wherein the thickness of the second layer is within the range of about 2 nm to about 10 nm.

18. The method of claim 11 , wherein the magnetic field is generated by a ferromagnetic layer, wherein the second layer is positioned in contact with a first side of the first layer, and wherein the ferromagnetic layer is positioned on a second side of the first layer, opposite the second layer.

19. The method of claim 18 , wherein an easy axis of the ferromagnetic layer is approximately perpendicular to the plane of the ferromagnetic material.

20. The method of claim 11 , wherein the first layer is strained at a level that changes the frequency within the range of sub-terahertz or terahertz frequencies at which the first layer injects spin current into the second layer as compared to the first layer in an unstrained state.