IP Library Granted Patent US 11,774,308
Granted Patent B2
US 11,774,308 · App. 17/024,228 · Granted Oct 3, 2023

Sensor device including sensor unit for a gaseous medium

Inventors: Rainer Leuschner (Regensburg, DE); Kerstin Kaemmer (Radebeul, DE); Roland Meier (Regensburg, DE); Marten Oldsen (Anzing, DE); Karolina Zogal (Regensburg, DE)
Assignee: Infineon Technologies AG
G01L9/0073G01L9/0042G01N33/0027
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Quick Facts
Patent No.
US 11,774,308
App. No.
17/024,228
Granted
Oct 3, 2023
Kind
B2
Abstract

A sensor device includes a sensor unit sensitive for a property of a gaseous medium. The sensor unit is formed on a first surface of a sensor substrate. A frame structure on the first surface includes a first loop portion laterally surrounding a first area that includes the sensor unit. A communicating channel accesses the first area through at least one of a lateral port in the first loop portion and a base port in the sensor substrate. A lid structure completely covers the frame structure and the first area.

Claims (30)

1. A sensor device comprising:

a sensor unit sensitive for a property of a gaseous medium, wherein the sensor unit is formed on a first surface of a sensor substrate;

a frame structure on the first surface, wherein the frame structure is formed from a developed first photoresist material and comprises a first loop portion laterally surrounding a first area comprising the sensor unit;

a communicating channel accessing the first area through at least one of a lateral port in the first loop portion or a base port in the sensor substrate; and

a lid structure formed from a developed second photoresist material formed directly on the frame structure and completely covering the frame structure and the first area.

2. The sensor device of claim 1 , wherein the sensor unit comprises a micro-electromechanical system (MEMS) pressure sensor.

3. The sensor device of claim 1 , wherein the sensor unit comprises a gas sensor having a sensitive surface comprising receptor sites for one or more species of molecules.

4. The sensor device of claim 1 , further comprising a carrier structure disposed on a second surface of the sensor substrate opposite the first surface of the sensor substrate.

5. A sensor device comprising:

a sensor unit sensitive for a property of a gaseous medium, wherein the sensor unit is formed on a first surface of a sensor substrate;

a frame structure on the first surface, wherein the frame structure is formed from a developed first photoresist material and comprises a first loop portion laterally surrounding a first area comprising the sensor unit; and

a communicating channel accessing the first area through at least one of a lateral port in the first loop portion or a base port in the sensor substrate.

6. The sensor device of claim 5 , wherein the sensor unit comprises a micro- electromechanical system (MEMS) pressure sensor.

7. The sensor device of claim 5 , wherein the sensor unit comprises a gas sensor having a sensitive surface comprising receptor sites for one or more species of molecules.

8. The sensor device of claim 5 , further comprising a carrier structure disposed on a second surface of the sensor substrate opposite the first surface of the sensor substrate.

9. The sensor device of claim 5 , further comprising a lid structure directly on the frame structure and completely covering the frame structure and the first area.

10. The sensor device of claim 5 , further comprising an inlet box formed by a second loop portion disposed on the sensor substrate and coupled to the lateral port.

11. The sensor device of claim 10 , further comprising a further lid structure covering at least a portion of the inlet box.

12. The sensor device of claim 11 , wherein the further lid structure comprises a lid opening exposing a lower portion of the inlet box.

13. The sensor device of claim 10 , further comprising a reflective structure disposed on the lower portion of the inlet box.

14. A method of forming a sensor device, the method comprising:

forming a sensor unit sensitive for a property of a gaseous medium, wherein the sensor unit is formed on a first surface of a sensor substrate;

forming a frame structure on the first surface, wherein the frame structure is formed from a developed first photoresist material and comprises a first loop portion laterally surrounding a first area comprising the sensor unit; and

forming a communicating channel accessing the first area through at least one of a lateral port in the first loop portion or a base port in the sensor substrate.

15. The method of claim 14 , further comprising a lid structure directly on the frame structure and completely covering the frame structure and the first area.

16. The method of claim 15 , wherein the lid structure is formed from a second photoresist material.

17. The method of claim 14 , further comprising forming an inlet box, wherein the inlet box is formed by a second loop portion disposed on the sensor substrate and coupled to the lateral port.

18. The method of claim 17 , further comprising forming a further lid structure covering at least a portion of the inlet box.

19. The method of claim 18 , wherein the further lid structure comprises a lid opening exposing a lower portion of the inlet box.

20. The method of claim 17 , further comprising forming a reflective structure disposed on the lower portion of the inlet box.

Priority Claims (1)
DE 102016121683.6 · Nov 11, 2016 · national
Continuity (2)
Division 15808044 · Nov 9, 2017
Related Publication 20210003466A1 · Jan 7, 2021