Semiconductor memory device including a multi-layer electrode
A semiconductor memory device includes a capacitor on a substrate. The capacitor includes a first electrode, a second electrode on the first electrode, and a dielectric layer between the first electrode and the second electrode. The second electrode includes a first layer, a second layer, and a third layer. The first layer is adjacent to the dielectric layer, and the third layer is spaced apart from the first layer with the second layer interposed therebetween. A concentration of nickel in the third layer is higher than a concentration of nickel in the first layer.
1. A semiconductor memory device comprising:
a capacitor on a substrate, the capacitor comprising:
a first electrode;
a second electrode on the first electrode, the second electrode comprising a first layer, a second layer, and a third layer; and
a dielectric layer between the first electrode and the second electrode,
wherein the first layer is adjacent to the dielectric layer, and the third layer is spaced apart from the first layer with the second layer interposed therebetween,
wherein the first layer includes titanium nitride (TiN),
wherein the second layer includes nickel (Ni), titanium (Ti), and nitrogen (N), and
wherein the third layer includes nickel.
2. The semiconductor memory device of claim 1 ,
wherein a concentration of titanium in the first layer is higher than a concentration of titanium in the third layer.
3. The semiconductor memory device of claim 2 , wherein a concentration of nickel in the second layer is lower than the concentration of nickel in the third layer, and
wherein a concentration of titanium in the second layer is lower than the concentration of titanium in the first layer.
4. The semiconductor memory device of claim 3 , wherein a concentration of nickel in a first portion of the second layer adjacent to the third layer is higher than a concentration of nickel in a second portion of the second layer adjacent to the first layer, and
wherein a concentration of titanium in the second portion of the second layer is higher than a concentration of titanium in the first portion of the second layer.
5. The semiconductor memory device of claim 3 , wherein a thickness of the third layer is greater than OA and equal to or less than 50Å.
6. The semiconductor memory device of claim 3 , wherein a top surface of the first layer is in physical contact with a bottom surface of the second layer, and
wherein a top surface of the second layer is in physical contact with a bottom surface of the third layer.
7. The semiconductor memory device of claim 1 , further comprising:
a metal oxide layer between the dielectric layer and the second electrode,
wherein the metal oxide layer includes titanium oxide.
8. The semiconductor memory device of claim 7 , wherein an interface between the metal oxide layer and the second electrode is free of nickel.
9. A semiconductor memory device comprising:
a capacitor on a substrate, the capacitor comprising:
a first electrode;
a second electrode on the first electrode, the second electrode comprising a first layer including an A-metal and nitrogen, a second layer, and a third layer including a B-metal; and
a dielectric layer disposed between the first electrode and the second electrode,
wherein the first layer is adjacent to the dielectric layer, and the third layer is spaced apart from the first layer with the second layer interposed therebetween,
wherein a work function of the B-metal is greater than a work function of an A-metal nitride.
10. The semiconductor memory device of claim 9 , wherein the A-metal nitride is titanium nitride, and
wherein the B-metal is nickel.
11. The semiconductor memory device of claim 10 , wherein a top surface of the first layer is in physical contact with a bottom surface of the second layer, and
wherein a top surface of the second layer is in physical contact with a bottom surface of the third layer.
12. The semiconductor memory device of claim 9 , wherein a difference between the work function of the B-metal and the work function of the A-metal nitride is at least 0.5 eV.
13. The semiconductor memory device of claim 9 , wherein the second layer includes the A-metal, nitrogen, and the B-metal.
14. The semiconductor memory device of claim 13 , wherein a concentration of the B-metal in a first portion of the second layer adjacent to the third layer is higher than a concentration of the B-metal in a second portion of the second layer adjacent to the first layer, and
wherein a concentration of the A-metal in the second portion of the second layer is higher than a concentration of the A-metal in the first portion of the second layer.
15. The semiconductor memory device of claim 9 , wherein the first electrode includes an A-metal nitride.
16. The semiconductor memory device of claim 9 , further comprising:
a support pattern in physical contact with sidewall so the first electrode.
17. The semiconductor memory device of claim 16 , wherein the dielectric layer is on a surface of the support pattern.
18. The semiconductor memory device of claim 9 , wherein a concentration of the A-metal has a maximum value in the first layer, and
a concentration of the B-metal mas a maximum value in the third layer.
19. The semiconductor memory device of claim 9 , further comprising:
a metal oxide layer between the dielectric layer and the second electrode.
20. The semiconductor memory device of claim 19 , wherein the metal oxide layer includes titanium oxide, and
wherein an interface between the metal oxide layer and the second electrode is free of nickel.