System for providing bi-directional power flow and power conditioning for low to high-voltage applications
A system for providing bi-directional power flow and power conditioning for high-voltage applications. The system including a normally-off four-quadrant power electronic switch having two gates and two normally-on junction field-effect transistor. The normally-off four-quadrant power electronic switch and the two normally-on junction field-effect transistors are coupled to one another in a bi-cascode configuration.
1. A system for providing bi-directional power flow and power conditioning for low to high-voltage applications, comprising:
a normally-off four-quadrant power electronic switch having two gates; and
two normally-on junction field-effect transistors;
wherein the normally-off four-quadrant power electronic switch and the two normally-on junction field-effect transistors are coupled to one another in a bi-cascode configuration, wherein the normally-off four-quadrant power electronic switch is coupled in series with each of the two normally-on junction field-effect transistors.
2. The system of claim 1 , wherein each of the two normally-on junction field-effect transistors that are coupled to one another with the normally-off four-quadrant power electronic switch are respectively connected in a cascode connection with at least one other normally-on junction field-effect transistor.
3. The system of claim 1 , wherein the two normally-on junction field-effect transistors are made of silicon carbide.
4. The system of claim 1 , wherein the two normally-on junction field-effect transistors are made of diamond.
5. The system of claim 1 , wherein the two normally-on junction field-effect transistors are made of silicon.
6. The system of claim 1 , wherein the normally-off four-quadrant power switch is a monolithic bidirectional power electronic switch.
7. The system of claim 1 , wherein the normally-off four-quadrant power switch comprises a wide bandgap semiconductor material.
8. The system of claim 7 , wherein the wide bandgap semiconductor material is aluminum gallium nitride/gallium nitride.
9. The system of claim 7 , wherein the wide bandgap semiconductor material is silicon carbide.
10. The system of claim 7 , wherein the wide bandgap semiconductor material is diamond.
11. The system of claim 1 , wherein each of the two normally-on junction field-effect transistors are coupled to one another with the normally-off four-quadrant power electronic switch across a bias circuit, wherein the bias circuit is configured to ensure that a voltage going across the system is within a predetermined limit.
12. The system of claim 11 , wherein the bias circuit comprises a Zener Diode mounted in parallel with a capacitor and a resistor.
13. The system of claim 11 , wherein the bias circuit comprises a Zener Diode mounted in series with a capacitor mounted in parallel with a resistor.
14. The system of claim 11 , wherein the bias circuit comprises a N-type metal-oxide-semiconductor logic.
15. The system of claim 14 , wherein the bias circuit comprises a Zener Diode mounted in parallel with the N-type metal-oxide-semiconductor logic and a resistor mounted in series with the N-type metal-oxide-semiconductor logic.
16. The system of claim 2 , wherein the two normally-on junction field-effect transistors are made of silicon carbide.
17. The system of claim 2 , wherein the two normally-on junction field-effect transistors are made of diamond.
18. The system of claim 2 , wherein the two normally-on junction field-effect transistors are made of silicon.
19. The system of claim 2 , wherein the normally-off four-quadrant power switch is a monolithic bidirectional power electronic switch.
20. The system of claim 2 , wherein the normally-off four-quadrant power switch comprises a wide bandgap semiconductor material.