IP Library › Granted Patent US 11,373,955
Granted Patent B2
US 11,373,955 · App. 17/032,210 · Granted Jun 28, 2022

Semiconductor package and method of manufacturing the semiconductor package

Inventors: Changeun Joo (Cheonan-si, KR); Gyujin Choi (Asan-si, KR)
Assignee: Samsung Electronics Co., Ltd.
H01L23/5386H01L23/49816H01L23/5383H01L21/565
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Quick Facts
Patent No.
US 11,373,955
App. No.
17/032,210
Granted
Jun 28, 2022
Kind
B2
Abstract

A semiconductor package includes a core substrate having a through hole, a first molding member at least partially filling the through hole and covering an upper surface of the core substrate, the first molding member having a cavity within the through hole, a first semiconductor chip on the first molding member on the upper surface of the core substrate, a second semiconductor chip arranged within the cavity, a second molding member on the first molding member and covering the first semiconductor chip, a third molding member filling the cavity and covering the lower surface of the core substrate; first redistribution wirings on the second molding member and electrically connecting first chip pads of the first semiconductor chip and core connection wirings of the core substrate; and second redistribution wirings on the third molding member and electrically connecting second chip pads of the second semiconductor chip and the core connection wirings.

Claims (56)

1. A semiconductor package, comprising:

a core substrate having a through hole;

a first molding member at least partially filling the through hole, and covering an upper surface of the core substrate, the first molding member having a cavity within the through hole and extending in a thickness direction from a lower surface of the core substrate;

a first semiconductor chip on the first molding member on the upper surface of the core substrate;

a second semiconductor chip within the cavity of the first molding member;

a second molding member on the first molding member and covering the first semiconductor chip;

a third molding member filling the cavity and covering the lower surface of the core substrate;

first redistribution wirings on the second molding member and electrically connecting first chip pads of the first semiconductor chip and core connection wirings of the core substrate;

second redistribution wirings on the third molding member and electrically connecting second chip pads of the second semiconductor chip and the core connection wirings of the core substrate; and

a lower redistribution wiring layer on the third molding member and having lower redistribution wirings electrically connected to the second redistribution wirings, respectively,

wherein at least one of the first, second, and third molding members includes a photo imageable dielectric material, and

wherein at least one of the first molding member and third molding member is in direct contact with the first semiconductor chip.

2. The semiconductor package as claimed in claim 1 , wherein the first molding member includes a first portion covering the upper surface of the core substrate and a second portion covering an inner sidewall of the through hole, and the cavity is provided in the second portion of the first molding member.

3. The semiconductor package as claimed in claim 1 , wherein the third molding member includes a third portion covering the lower surface of the core substrate, a fourth portion covering an inner sidewall of the cavity of the first molding member, and a fifth portion covering a first surface of the second semiconductor chip.

4. The semiconductor package as claimed in claim 1 , wherein a first surface of the second semiconductor chip on which the second chip pads are formed is coplanar with the lower surface of the core substrate.

5. The semiconductor package as claimed in claim 1 , wherein a second surface of the first semiconductor chip, which is opposite to a first surface on which the first chip pads are formed, faces a second surface of the second semiconductor chip, which is opposite to a first surface on which the second chip pads are formed.

6. The semiconductor package as claimed in claim 5 , wherein:

an adhesive film is interposed between the second surface of the first semiconductor chip and the second surface of the second semiconductor chip, and

the adhesive film is in direct contact with the second surface of the first semiconductor chip and is in direct contact with the second surface of the second semiconductor chip.

7. The semiconductor package as claimed in claim 1 , wherein the cavity penetrates through the first molding member.

8. The semiconductor package as claimed in claim 1 , wherein the cavity extends from the lower surface of the core substrate to a predetermined depth, and a portion of the first molding member is interposed between the first semiconductor chip and the second semiconductor chip.

9. The semiconductor package as claimed in claim 1 , wherein the first redistribution wirings include bonding wires, and the second molding member further includes a portion covering the bonding wires.

10. The semiconductor package as claimed in claim 1 , further comprising an upper redistribution wiring layer on the second molding member and having upper redistribution wirings electrically connected to the first redistribution wirings.

11. A semiconductor package, comprising:

a core substrate having a first surface and a second surface opposite to each other, and having a through hole that extends from the first surface to the second surface;

a first molding member having a first portion covering the first surface of the core substrate and a second portion covering an inner sidewall of the through hole, the second portion having a cavity within the through hole and exposed from the second surface of the core substrate;

a first semiconductor chip on the first molding member on the first surface of the core substrate;

a second semiconductor chip within the cavity of the first molding member;

a second molding member on the first molding member on the first surface of the core substrate and covering the first semiconductor chip;

a third molding member on the second surface of the core substrate, filling the cavity of the first molding member, and covering the second semiconductor chip;

first redistribution wirings on the second molding member and electrically connecting first chip pads of the first semiconductor chip and core connection wirings of the core substrate;

second redistribution wirings on the third molding member and electrically connecting second chip pads of the second semiconductor chip and the core connection wirings of the core substrate; and

a lower redistribution wiring layer on the third molding member and having lower redistribution wirings electrically connected to the second redistribution wirings, respectively,

wherein at least one of the first molding member and third molding member is in direct contact with the first semiconductor chip.

12. The semiconductor package as claimed in claim 11 , wherein a second surface of the first semiconductor chip, which is opposite to a first surface on which the first chip pads are formed, faces a second surface of the second semiconductor chip, which is opposite to a first surface on which the second chip pads are formed.

13. The semiconductor package as claimed in claim 12 , wherein:

an adhesive film is interposed between the second surface of the first semiconductor chip and the second surface of the second semiconductor chip, and

the adhesive film is in direct contact with the second surface of the first semiconductor chip and is in direct contact with the second surface of the second semiconductor chip.

14. The semiconductor package as claimed in claim 11 , wherein the cavity penetrates through the first molding member.

15. The semiconductor package as claimed in claim 11 , wherein the cavity extends from the second surface of the core substrate to a predetermined depth, and a portion of the first molding member is interposed between the first semiconductor chip and the second semiconductor chip.

16. The semiconductor package as claimed in claim 11 , wherein the third molding member includes a third portion covering the second surface of the core substrate, a fourth portion covering an inner sidewall of the cavity of the first molding member, and a fifth portion covering a first surface of the second semiconductor chip.

17. The semiconductor package as claimed in claim 11 , wherein a first surface of the second semiconductor chip on which the second chip pads are formed is coplanar with the second surface of the core substrate.

18. The semiconductor package as claimed in claim 11 , wherein the first redistribution wirings include bonding wires, and the second molding member further include a portion covering the bonding wires.

19. The semiconductor package as claimed in claim 11 , further comprising an upper redistribution wiring layer on the second molding member and having upper redistribution wirings electrically connected to the first redistribution wirings, respectively.

20. A semiconductor package, comprising:

a core substrate having a through hole;

a first molding member at least partially filling the through hole and covering an upper surface of the core substrate, the first molding member having a cavity within the through hole and extending in a thickness direction from a lower surface of the core substrate;

a first semiconductor chip on the first molding member on the upper surface of the core substrate;

a second semiconductor chip within the cavity of the first molding member;

a second molding member on the first molding member and covering the first semiconductor chip;

a third molding member filling the cavity and covering the lower surface of the core substrate;

first redistribution wirings on the second molding member, and electrically connecting first chip pads of the first semiconductor chip and core connection wirings of the core substrate; and

second redistribution wirings on the third molding member, and electrically connecting second chip pads of the second semiconductor chip and the core connection wirings of the core substrate,

wherein a second surface of the first semiconductor chip, which is opposite to a first surface on which the first chip pads are formed, faces a second surface of the second semiconductor chip, which is opposite to a first surface on which the second chip pads are formed, and

wherein an adhesive film is interposed between the second surface of the first semiconductor chip and the second surface of the second semiconductor chip, and

the adhesive film is in direct contact with the second surface of the first semiconductor chip and is in direct contact with the second surface of the second semiconductor chip.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 25, 2020
From: JOO, CHANGEUN; CHOI, GYUJIN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 053882/0626 →
Priority Claims (1)
KR 10-2020-0022838 · Feb 25, 2020 · national
Continuity (1)
Related Publication 20210265274A1 · Aug 26, 2021
Cited By (2)
US 12,696,384 US 12,727,492