Singulation of microelectronic components with direct bonding interfaces
Disclosed herein are structures and techniques related to singulation of microelectronic components with direct bonding interfaces. For example, in some embodiments, a microelectronic component may include: a surface, wherein conductive contacts are at the surface; a trench at a perimeter of the surface; and a burr in the trench.
1. A microelectronic assembly, comprising:
a first microelectronic component having a face having a first direct bonding interface, wherein the first microelectronic component has a trench at a perimeter of the face and having a depth;
a burr in the trench having a height that is less than the depth of the trench; and
a second microelectronic component having a second direct bonding interface, wherein the first direct bonding interface is direct bonded to the second direct bonding interface.
2. The microelectronic assembly of claim 1 , wherein the first direct bonding interface includes conductive contacts.
3. The microelectronic assembly of claim 2 , wherein a pitch of the conductive contacts is less than 20 microns.
4. The microelectronic assembly of claim 2 , wherein the conductive contacts include copper.
5. The microelectronic assembly of claim 2 , wherein the first direct bonding interface includes a dielectric material between adjacent ones of the conductive contacts.
6. The microelectronic assembly of claim 5 , wherein the dielectric material includes an inorganic dielectric material.
7. The microelectronic assembly of claim 1 , wherein the face is a first face, the trench is a first trench, the second direct bonding interface is at a second face of the second microelectronic component, and the second microelectronic component has a second trench at a perimeter of the second face.
8. The microelectronic assembly of claim 7 , wherein the second microelectronic component includes a burr in the second trench.
9. A system, comprising:
a circuit board; and
a microelectronic assembly, communicatively coupled to the circuit board, wherein the microelectronic assembly includes a face of a first microelectronic component direct bonded to a face of a second microelectronic component, and the face of the first microelectronic component includes a trench at its edges, wherein the trench has a depth and comprises a burr having a height that is less than the depth of the trench.
10. The system of claim 9 , wherein the system further includes a display communicatively coupled to the circuit board.
11. The microelectronic assembly of claim 1 , wherein the trench extends into a metallization stack of the first microelectronic component.
12. The microelectronic assembly of claim 1 , wherein the trench extends into a substrate of the first microelectronic component.
13. The microelectronic assembly of claim 12 , wherein the substrate includes a semiconductor material.
14. The microelectronic assembly of claim 1 , wherein the burr is at an edge of the trench.
15. The microelectronic assembly of claim 1 , wherein the burr has a height greater than 300 nanometers.
16. The microelectronic assembly of claim 1 , wherein the burr includes material of a substrate of the first microelectronic component.
17. The microelectronic assembly of claim 1 , wherein the first microelectronic component includes a substrate, and side surfaces of the substrate are convex, concave, or angled.
18. The microelectronic assembly of claim 1 , wherein the first microelectronic component includes a substrate, and side surfaces of the substrate are jagged.
19. The microelectronic assembly of claim 1 , wherein corners of the first microelectronic component are rounded.