Vertical cavity surface emitting laser device

1. A vertical cavity surface emitting laser device comprising:

an N-type metal substrate;

a plurality of laser-emitting units disposed on the N-type metal substrate, each laser-emitting unit comprising:

an N-type contact layer in contact with the N-type metal substrate;

an N-type Bragg reflector layer in contact with the N-type contact layer;

a P-type Bragg reflector layer disposed above the N-type Bragg reflector layer;

an active emitter layer disposed between the P-type Bragg reflector layer and the N-type Bragg reflector layer;

a current restriction layer disposed between the active emitter layer and the P-type Bragg reflector layer, wherein the current restriction layer has a current restriction hole;

a P-type contact layer in contact with the P-type Bragg reflector layer; and

an insulation sidewall surrounding and contacting all edges of the N-type and P-type Bragg reflector layers, the N-type and P-type contact layers, the active emitter layer and the current restriction layer;

a P-type metal substrate in contact with the P-type contact layer of each laser-emitting unit, the P-type metal substrate has a plurality of through holes, each through hole is aligned with the current restriction hole of a corresponding one of the laser-emitting units; and

an isolation block connected to the insulation sidewall of the laser-emitting units, and disposed between the P-type metal substrate and the N-type metal substrate, wherein the isolation block has a thickness ranging from 0.5 micron to 5 microns.

2. The vertical cavity surface emitting laser device of claim 1 , wherein the isolation block is not overlapped with the N-type contact layer.

3. The vertical cavity surface emitting laser device of claim 1 , wherein the P-type metal substrate has a portion disposed between any immediately-adjacent two of the insulation sidewalls of the laser-emitting units.

4. The vertical cavity surface emitting laser device of claim 1 , wherein a vertical projection of the P-type Bragg reflector layer on the active emitter layer is substantially equal to a vertical projection of the N-type Bragg reflector layer on the active emitter layer.

5. The vertical cavity surface emitting laser device of claim 1 , wherein the P-type metal substrate has a thickness ranging from 3 microns to 15 microns.

6. The vertical cavity surface emitting laser device of claim 1 , wherein the N-type metal substrate has a thickness ranging from 30 microns to 100 microns.

7. The vertical cavity surface emitting laser device of claim 1 , wherein a distance between immediately-adjacent two of the insulation sidewalls of the laser-emitting units ranges from 5 microns to 50 microns.

8. The vertical cavity surface emitting laser device of claim 1 , wherein the insulation sidewall has a thickness ranging from 0.1 micron to 2 microns.

9. A vertical cavity surface emitting laser device comprising:

an N-type metal substrate;

a plurality of laser-emitting units disposed on the N-type metal substrate, each laser-emitting unit comprising:

an N-type contact layer in contact with the N-type metal substrate;

an N-type Bragg reflector layer in contact with the N-type contact layer;

a P-type Bragg reflector layer disposed above the N-type Bragg reflector layer;

an active emitter layer disposed between the P-type Bragg reflector layer and the N-type Bragg reflector layer;

a current restriction layer disposed between the active emitter layer and the P-type Bragg reflector layer, wherein the current restriction layer has a current restriction hole;

a P-type contact layer in contact with the P-type Bragg reflector layer; and

an insulation sidewall surrounding and contacting all edges of the N-type and P-type Bragg reflector layers, the N-type and P-type contact layers, the active emitter layer and the current restriction layer;

a P-type metal substrate in contact with the P-type contact layer of each laser-emitting unit, the P-type metal substrate has a plurality of through holes, each through hole is aligned with the current restriction hole of a corresponding one of the laser-emitting units; and

an isolation block connected to the insulation sidewall of the laser-emitting units, and disposed between the P-type metal substrate and the N-type metal substrate, wherein a vertical projection of the P-type contact layer on the active emitter layer is substantially equal to a vertical projection of the N-type contact layer on the active emitter layer.

10. The vertical cavity surface emitting laser device of claim 9 , wherein the isolation block is not overlapped with the N-type contact layer.

11. The vertical cavity surface emitting laser device of claim 9 , wherein the P-type metal substrate has a portion disposed between any immediately-adjacent two of the insulation sidewalls of the laser-emitting units.

12. The vertical cavity surface emitting laser device of claim 9 , wherein a vertical projection of the P-type Bragg reflector layer on the active emitter layer is substantially equal to a vertical projection of the N-type Bragg reflector layer on the active emitter layer.

13. The vertical cavity surface emitting laser device of claim 9 , wherein the P-type metal substrate has a thickness ranging from 3 microns to 15 microns.

14. The vertical cavity surface emitting laser device of claim 9 , wherein the N-type metal substrate has a thickness ranging from 30 microns to 100 microns.

15. The vertical cavity surface emitting laser device of claim 9 , wherein a distance between immediately-adjacent two of the insulation sidewalls of the laser-emitting units ranges from 5 microns to 50 microns.

16. The vertical cavity surface emitting laser device of claim 9 , wherein the insulation sidewall has a thickness ranging from 0.1 micron to 2 microns.

17. The vertical cavity surface emitting laser device of claim 9 , wherein the isolation block has a thickness ranging from 0.5 micron to 5 microns.