Semiconductor device
A semiconductor device, including a semiconductor chip having a first main electrode on a front surface thereof, the first main electrode having a plurality of bonded regions, and a plurality of wires that are bonded respectively to the plurality of bonded regions of the first main electrode. In a top view of the semiconductor device, the plurality of bonded regions do not overlap in either a predetermined first direction, or a second direction perpendicular to the predetermined first direction.
1. A semiconductor device, comprising:
a semiconductor chip having a first main electrode on a front surface thereof and a second main electrode on a rear surface thereof, the first main electrode having a plurality of bonded regions;
a conductive plate; and
a plurality of wires that are bonded respectively to the plurality of bonded regions of the first main electrode and that connect the semiconductor chip and the conductive plate, wherein
in a top view of the semiconductor device, no two of the plurality of bonded regions overlap in a predetermined first direction, or in a second direction perpendicular to the predetermined first direction, and
each of the plurality of wires has two ends, which are respectively connected to the semiconductor chip and the conductive plate.
2. The semiconductor device according to claim 1 , wherein
the second main electrode of the semiconductor chip is connected to the conductive plate via a bonding member.
3. The semiconductor device according to claim 1 , wherein the plurality of wires includes at least four wires.
4. The semiconductor device according to claim 1 , wherein
the front surface has a center portion and an outer edge portion; and
the plurality of bonded regions are disposed on a part of the front surface aside from the center portion.
5. The semiconductor device according to claim 1 , wherein
the front surface has a center portion and an outer edge portion; and
the plurality of bonded regions are disposed on the outer edge portion of the front surface.
6. The semiconductor device according to claim 1 , wherein the plurality of bonded regions are of an even number.
7. The semiconductor device according to claim 1 , wherein the semiconductor chip includes a diode or a switching element.
8. The semiconductor device according to claim 1 , wherein the semiconductor chip is made of silicon carbide.
9. The semiconductor device according to claim 1 , wherein
the semiconductor chip is of a substantially rectangular shape, and
the predetermined first direction is parallel to a side of the substantially rectangular shape.
10. A semiconductor device, comprising:
a semiconductor chip having a first main electrode on a front surface thereof, the first main electrode having a plurality of bonded regions; and
a plurality of wires that are bonded respectively to the plurality of bonded regions of the first main electrode, wherein
in a top view of the semiconductor device, no two of the plurality of bonded regions overlap in a predetermined first direction, or in a second direction perpendicular to the predetermined first direction;
the plurality of bonded regions are of an even number;
the front surface has a center point and an outer edge portion; and
the plurality of bonded regions are provided in pairs, each pair being so laid out as to have point symmetry about the center point of the front surface.
11. The semiconductor device according to claim 10 , wherein the plurality of bonded regions include four bonded regions laid out in the outer edge portion of the front surface.
12. The semiconductor device according to claim 11 , wherein, for the four bonded regions provided in two pairs, a straight line that joins one pair and a straight line that joins the other pair are substantially perpendicular.
13. The semiconductor device according to claim 10 , wherein the plurality of bonded regions are laid out so as to have line symmetry with respect to a straight line that passes the center point of the front surface.
14. A semiconductor device, comprising:
a semiconductor chip having a first main electrode on a front surface thereof, the first main electrode having a plurality of bonded regions; and
a plurality of wires that are bonded respectively to the plurality of bonded regions of the first main electrode, wherein
in a top view of the semiconductor device, no two of the plurality of bonded regions overlap in a predetermined first direction, or in a second direction perpendicular to the predetermined first direction; and
the semiconductor chip is of a substantially rectangular shape, a length of each side thereof being 7 mm or shorter.