Semiconductor device with transistor local interconnects
A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate. The first transistor and a second transistor are formed on the semiconductor substrate. Each transistor comprises a source, a drain, and a gate. The gate of the first transistor extends longitudinally as part of a first linear strip and the gate of the second transistor extends longitudinally as part of the second linear strip parallel to and spaced apart from the first linear strip. A first CB layer forms a local interconnect layer electrically connected to the gate of the first transistor. A second CB layer forms a local interconnect layer electrically connected to the gate of the second transistor. A CA layer forms a local interconnect layer extending longitudinally between a first end and a second end of the CA layer. The CA layer is electrically connected to the first and second CB layers. The first CB layer is electrically connected adjacent the first end of the CA layer and the second layer is electrically connected adjacent the second end of the CA layer. The first CB layer, the second CB layer and the CA layer are disposed between a first metal layer and the semiconductor substrate. The first metal layer being disposed above each source, each drain, and each gate of the first and second transistors. The CA layer extends substantially parallel to the first and second linear strips and is substantially perpendicular to the first and second CB layers. At least one via selectively provides an electrical connection between the CA or CB layers and the at least one metal layer.
1. A semiconductor device comprising:
a semiconductor substrate;
a first transistor and a second transistor formed on the semiconductor substrate, wherein each transistor comprises a source, a drain, and a gate, wherein the gate of the first transistor extends longitudinally as part of a first linear strip and wherein the gate of the second transistor extends longitudinally as part of the second linear strip parallel to and spaced apart from the first linear strip;
a first CB layer forming a local interconnect layer electrically connected to the gate of the first transistor;
a second CB layer forming a local interconnect layer electrically connected to the gate of the second transistor;
a CA layer forming a local interconnect layer extending longitudinally between a first end and a second end of the CA layer, wherein the CA layer is electrically connected to the first and second CB layers;
wherein the first CB layer is electrically connected adjacent the first end of the CA layer and the second layer is electrically connected adjacent the second end of the CA layer,
wherein the first CB layer, the second CB layer and the CA layer are disposed between a first metal layer and the semiconductor substrate, the first metal layer being disposed above each source, each drain, and each gate of the first and second transistors, and
wherein the CA layer extends substantially parallel to the first and second linear strips and is substantially perpendicular to the first and second CB layers; and
at least one via selectively providing an electrical connection between the CA or CB layers and the at least one metal layer.
2. The semiconductor device according to claim 1 , wherein the at least one via selectively provides an electrical connection between the CA layer and the at least one metal layer.
3. The semiconductor device according to claim 2 , wherein the at least one metal layer is the first metal layer.
4. The semiconductor device according to claim 1 , wherein the at least one via selectively provides an electrical connection between one of the CB layers and the at least one metal layer.
5. The semiconductor device according to claim 4 , wherein the at least one metal layer is the first metal layer.
6. The semiconductor device according to claim 1 , wherein the at least one via and the CA layer are formed of substantially different materials.
7. The semiconductor device according to claim 6 , wherein the at least one via includes copper and the CA layer includes tungsten.
8. The semiconductor device according to claim 1 , wherein the CA layer is disposed between the gate of the first transistor and the gate of the second transistor.
9. The semiconductor device according to claim 8 , wherein the CA layer extends substantially parallel to the first linear strip and the second linear strip.
10. The semiconductor device according to claim 9 , further comprising a third transistor having a gate extending longitudinally along the first linear strip and a fourth transistor having a gate extending longitudinally along the second linear strip.
11. The semiconductor device according to claim 10 , wherein the gate of the first transistor and the gate of the third transistor are separated by a gap, and wherein the gate of the second transistor and the gate of fourth transistor are separated by a gap.
12. The semiconductor device according to claim 11 , wherein the CA layer, the first CB layer, and the second CB layer each terminate at an uppermost surface, and wherein the uppermost surface of the CA layer, the uppermost surface of the first CB layer, and the uppermost surface of the second CB layer are at a height above the semiconductor substrate.
13. The semiconductor device according to claim 1 wherein the first CB layer and the second CB layer each have a height of about 70 nm.