Self-capacitive touch substrate and display device

1. A self-capacitive touch substrate, comprising:

a display area;

a peripheral area;

a plurality of self-capacitive touch electrodes disposed in the display area;

a plurality of touch electrode leads connected to the self-capacitive touch electrodes;

a thin film transistor switching circuit disposed in the peripheral area; and

a self-capacitive touch electrode lead disposed in the peripheral area;

wherein each of the self-capacitive touch electrodes is connected to one of the touch electrode leads;

wherein the plurality of self-capacitive touch electrodes are disposed in a matrix having multiple rows and multiple columns;

wherein the plurality of self-capacitive touch electrodes are disposed in groups;

wherein the plurality of self-capacitive touch electrodes are connected to the thin film transistor switching circuit in a grouping manner;

wherein the self-capacitive touch substrate comprises a long terminal and a short terminal;

wherein the plurality of touch electrode leads comprise a metal grid wiring, a channel width of the metal grid of the metal grid wiring is greater than a width of three grid units, and the metal grid comprises multiple fractures;

wherein the thin film transistor switching circuit is a two-stage thin film transistor comprising a first thin film transistor and a second thin film transistor, and wherein the first thin film transistor comprises a touch electrode lead, a flexible printed circuit board (FPC) terminal touch electrode lead, a source and a drain of an array substrate, and a gate, and wherein the touch electrode lead and the FPC terminal touch electrode lead connect to the source and the drain of the array substrate by via hole, and wherein the second thin film transistor structure and the first thin film transistor structure are the same; and

wherein adjacent two touch electrode leads corresponding to one of the thin film transistors to constitute a data selecting circuit, and wherein an adjacent clock signal is transmitted to gates of the first thin film transistor and the second thin film transistor to sequentially drive the first thin film transistor and the second thin film transistor at high driving speed.

2. The self-capacitive touch substrate according to claim 1 , wherein the self-capacitive touch substrate at least comprises a flexible substrate, an array driving circuit, an organic light-emitting layer, a thin-film packaging layer, an interlayer insulating layer, a self-capacitive touch electrode layer, and a planarization layer.

3. The self-capacitive touch substrate according to claim 2 , wherein the self-capacitive touch electrode layer is a single-layer metal mesh structure.

4. The self-capacitive touch substrate according to claim 1 , wherein the plurality of self-capacitive touch electrodes are disposed in two symmetrical areas in a long terminal direction, the plurality of the touch electrode leads corresponding to the two symmetrical areas lead out along a short terminal direction and connected to the thin film transistor switching circuit, and a touch electrode area of the self-capacitive touch electrode decreases sequentially along the short terminal direction.

5. The self-capacitive touch substrate according to claim 4 , wherein the plurality of touch electrode leads corresponding to the two symmetrical areas lead out along the same way of the short terminal direction or the plurality of the touch electrode leads corresponding to the two symmetrical areas lead out along an opposite way of the short terminal direction.

6. The self-capacitive touch substrate according to claim 1 , wherein the plurality of self-capacitive touch electrodes are disposed in two symmetrical areas in a long terminal direction, the plurality of touch electrode leads corresponding to the two symmetrical areas lead out along a short terminal direction and connected to the thin film transistor switching circuit, and a touch electrode area of the self-capacitive touch electrode decreases sequentially along the short terminal direction.

7. The self-capacitive touch substrate according to claim 6 , wherein the plurality of touch electrode leads corresponding to the two symmetrical areas lead out along an opposite way of the short terminal direction.

8. A self-capacitive touch substrate, comprising:

a display area;

a peripheral area;

a plurality of self-capacitive touch electrodes disposed in the display area;

a plurality of touch electrode leads connected to the self-capacitive touch electrodes;

a thin film transistor switching circuit disposed in the peripheral area; and

a self-capacitive touch electrode lead disposed in the peripheral area;

wherein each of the self-capacitive touch electrodes is connected to one of the touch electrode leads;

wherein the plurality of self-capacitive touch electrodes are disposed in a matrix having multiple rows and multiple columns;

wherein the plurality of self-capacitive touch electrodes are disposed in groups;

wherein the plurality of self-capacitive touch electrodes are connected to the thin film transistor switching circuit in a grouping manner;

wherein the self-capacitive touch substrate comprises a long terminal and a short terminal;

wherein the thin film transistor switching circuit is a two-stage thin film transistor comprising a first thin film transistor and a second thin film transistor, and wherein the first thin film transistor comprises a touch electrode lead, a flexible printed circuit board (FPC) terminal touch electrode lead, a source and a drain of an array substrate, and a gate, and wherein the touch electrode lead and the FPC terminal touch electrode lead connect to the source and the drain of the array substrate by via hole, and wherein the second thin film transistor structure and the first thin film transistor structure are the same; and

wherein adjacent two touch electrode leads corresponding to one of the thin film transistors to constitute a data selecting circuit, and wherein an adjacent clock signal is transmitted to gates of the first thin film transistor and the second thin film transistor to sequentially drive the first thin film transistor and the second thin film transistor at high driving speed.

9. The self-capacitive touch substrate according to claim 8 , wherein the self-capacitive touch substrate at least comprises a flexible substrate, an array driving circuit, an organic light-emitting layer, a thin-film packaging layer, an interlayer insulating layer, a self-capacitive touch electrode layer, and a planarization layer.

10. The self-capacitive touch substrate according to claim 9 , wherein the self-capacitive touch electrode layer is a single-layer metal mesh structure.

11. The self-capacitive touch substrate according to claim 8 , wherein the plurality of self-capacitive touch electrodes are disposed in two symmetrical areas in a long terminal direction, the plurality of the touch electrode leads corresponding to the two symmetrical areas lead out along a short terminal direction and connected to the thin film transistor switching circuit, and a touch electrode area of the self-capacitive touch electrode decrease sequentially along the short terminal direction.

12. The self-capacitive touch substrate according to claim 11 , wherein the plurality of touch electrode leads corresponding to the two symmetrical areas lead out along the same way of the short terminal direction or the plurality of the touch electrode leads corresponding to the two symmetrical areas lead out along an opposite way of the short terminal direction.

13. The self-capacitive touch substrate according to claim 8 , wherein the plurality of self-capacitive touch electrodes are disposed in two symmetrical areas in a long terminal direction, the plurality of touch electrode leads corresponding to the two symmetrical areas lead out along a short terminal direction and connected to the thin film transistor switching circuit, and a touch electrode area of the self-capacitive touch electrode decreases sequentially along the short terminal direction.

14. The self-capacitive touch substrate according to claim 13 , wherein the plurality of the touch electrode leads corresponding to the two symmetrical areas lead out along an opposite way of the short terminal direction.

15. The self-capacitive touch substrate according to claim 8 , wherein the plurality of touch electrode leads comprise a metal grid wiring, a channel width of the metal grid of the metal grid wiring is greater than a width of three grid units, and the metal grid comprises multiple fractures.

16. A display device, comprising:

a self-capacitive touch substrate, wherein the self-capacitive touch substrate comprises:

a display area;

a peripheral area;

a plurality of self-capacitive touch electrodes disposed in the display area;

a plurality of touch electrode leads connected to the self-capacitive touch electrodes;

a thin film transistor switching circuit disposed in the peripheral area; and

a self-capacitive touch electrode lead disposed in the peripheral area;

wherein each of the self-capacitive touch electrodes is connected to one of the touch electrode leads;

wherein the plurality of self-capacitive touch electrodes are disposed in a matrix having multiple rows and multiple columns;

wherein the plurality of self-capacitive touch electrodes are disposed in groups;

wherein the plurality of self-capacitive touch electrodes are connected to the thin film transistor switching circuit in a grouping manner

wherein the self-capacitive touch substrate comprises a long terminal and a short terminal;

wherein the thin film transistor switching circuit is a two-stage thin film transistor comprising a first thin film transistor and a second thin film transistor, and wherein the first thin film transistor comprises a touch electrode lead, a flexible printed circuit board (FPC) terminal touch electrode lead, a source and a drain of an array substrate, and a gate, and wherein the touch electrode lead and the FPC terminal touch electrode lead connect to the source and the drain of the array substrate by via hole, and wherein the second thin film transistor structure and the first thin film transistor structure are the same; and

wherein adjacent two touch electrode leads corresponding to one of the thin film transistors to constitute a data selecting circuit, and wherein an adjacent clock signal is transmitted to gates of the first thin film transistor and the second thin film transistor to sequentially drive the first thin film transistor and the second thin film transistor at high driving speed.

17. The display device according to claim 16 , wherein the plurality of self-capacitive touch electrodes are disposed in two symmetrical areas in a long terminal direction, the plurality of the touch electrode leads corresponding to the two symmetrical areas lead out along a short terminal direction and connected to the thin film transistor switching circuit, and a touch electrode area of the self-capacitive touch electrode decrease sequentially along the short terminal direction; and

wherein the plurality of touch electrode leads corresponding to the two symmetrical areas lead out along the same way of the short terminal direction or the plurality of the touch electrode leads corresponding to the two symmetrical areas lead out along an opposite way of the short terminal direction.

18. The display device according to claim 16 , wherein the plurality of self-capacitive touch electrodes are disposed in two symmetrical areas in a long terminal direction, the plurality of touch electrode leads corresponding to the two symmetrical areas lead out along a short terminal direction and connected to the thin film transistor switching circuit, and a touch electrode area of the self-capacitive touch electrode decreases sequentially along the short terminal direction; and

wherein the plurality of the touch electrode leads corresponding to the two symmetrical areas lead out along an opposite way of the short terminal direction.