Semiconductor device and method for manufacturing semiconductor device
View Patent ↗A semiconductor device with high on-state current and high reliability is provided. The semiconductor device includes first to fifth insulators, first to third oxides, and first to fourth conductors; the fifth insulator includes an opening in which the second oxide is exposed; the third oxide is placed in contact with a bottom portion of the opening and a side portion of the opening; the second insulator is placed in contact with the third oxide; the third conductor is provided in contact with the second insulator; the third insulator is placed in contact with a top surface of the third conductor and the second insulator; and the fourth conductor is in contact with the third insulator and the top surface of the third conductor and placed in the opening.
1. A semiconductor device comprising:
a first insulator;
a first oxide over the first insulator;
a second oxide over the first oxide;
a first conductor and a second conductor over the second oxide;
a second insulator over the second oxide;
a third conductor over the second insulator;
a fourth conductor and a third insulator over the third conductor;
a fourth insulator over the first insulator, the first conductor, and the second conductor; and
a fifth insulator over the fourth insulator,
wherein the fifth insulator includes an opening in which the second oxide is exposed,
wherein the second insulator, the third conductor, the fourth conductor, and the third insulator are in the opening,
wherein a length of a top surface of the third conductor is longer than a length of a bottom surface of the fourth conductor,
wherein the third conductor is in contact with the second insulator,
wherein the third insulator is in contact with the top surface of the third conductor and the second insulator,
wherein the fourth conductor is in contact with the third insulator and the top surface of the third conductor,
wherein the fourth conductor faces the second insulator with the third conductor therebetween and faces the second insulator with the third insulator therebetween,
wherein the fourth insulator is in contact with a top surface of the first insulator, a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor, and
wherein the third insulator is less likely to pass oxygen or hydrogen than the second insulator.
2. The semiconductor device according to claim 1 , wherein the third insulator contains aluminum and oxygen.
3. The semiconductor device according to claim 1 , wherein the third insulator contains silicon and nitrogen.
4. The semiconductor device according to claim 1 , further comprising a third oxide over the second oxide,
wherein the third oxide is in contact with the second insulator,
wherein the first to third oxides each contain In, an element M, and
wherein the element M is Al, Ga, Y, or Sn.
5. The semiconductor device according to claim 1 , wherein an outer side surface of the third insulator is in contact with an inner side surface of the second insulator.
6. A semiconductor device comprising:
a first insulator;
a first oxide over the first insulator;
a second oxide over the first oxide;
a first conductor and a second conductor over the second oxide;
a second insulator over the second oxide;
a third conductor over the second insulator;
a fourth conductor and a third insulator over the third conductor;
a fourth insulator over the first insulator, the first conductor, and the second conductor; and
a fifth insulator over the fourth insulator,
wherein a length of a top surface of the third conductor is longer than a length of a bottom surface of the fourth conductor,
wherein the fifth insulator includes an opening in which the second oxide is exposed, and
wherein the second insulator, the third conductor, the fourth conductor, and the third insulator are in the opening.
7. The semiconductor device according to claim 6 , wherein the third insulator contains aluminum and oxygen.
8. The semiconductor device according to claim 6 , wherein the third insulator contains silicon and nitrogen.
9. The semiconductor device according to claim 6 , further comprising a third oxide over the second oxide,
wherein the third oxide is in contact with the second insulator,
wherein the first to third oxides each contain In, an element M, and
wherein the element M is Al, Ga, Y, or Sn.
10. The semiconductor device according to claim 6 , wherein the third insulator is less likely to pass oxygen or hydrogen than the second insulator.
11. The semiconductor device according to claim 6 , wherein an outer side surface of the third insulator is in contact with an inner side surface of the second insulator.