Active gas generation apparatus and deposition processing apparatus

1. An active gas generation apparatus generating active gas by activating source gas supplied to a discharge space in which a dielectric barrier discharge is generated, said active gas generation apparatus comprising:

an electrode unit including a first electrode and a second electrode; and

an AC power source supplying an AC voltage to said electrode unit, wherein said electrode unit includes:

an electrode body part made of a dielectric;

said first electrode and said second electrode located within said electrode body part, and each having conductivity;

a gas inlet located in said electrode body part, and receiving said source gas externally supplied; and

a gas internal flow path located within said electrode body part, and allowing said source gas having entered through said gas inlet to pass therethrough, said gas internal flow path being spiral in plan view,

said first electrode and said second electrode are arranged on sides of opposite side surfaces of said gas internal flow path to oppose each other with a portion of said electrode body part and said gas internal flow path therebetween, and are spiral in plan view along with said gas internal flow path, a region in said gas internal flow path between said first electrode and said second electrode being said discharge space, said dielectric barrier discharge being generated in said discharge space upon application of said AC voltage from said AC power source,

said electrode unit further includes

a plurality of gas ejection ports located below said discharge space to communicate with said gas internal flow path, and

said active gas generated by activating said source gas supplied to said discharge space is jetted through said plurality of gas ejection ports.

2. The active gas generation apparatus according to claim 1 , wherein

said first electrode and said second electrode are not exposed from said electrode body part.

3. The active gas generation apparatus according to claim 1 , wherein

said second electrode is set to ground level, and said AC voltage is applied to said first electrode, and

said first electrode and said second electrode are arranged so that said second electrode is located on an outermost periphery of said electrode body part in plan view.

4. The active gas generation apparatus according to claim 1 , wherein

said electrode body part includes:

an electrode unit base; and

an electrode unit lid located on a front surface of said electrode unit base,

said electrode unit base has a first electrode groove and a second electrode groove each having the same formation depth from said front surface,

said gas internal flow path is groove-shaped to have a predetermined formation depth from said front surface of said electrode unit base,

said first electrode and said second electrode are respectively embedded in said first electrode groove and said second electrode groove, and

said first electrode has a formation height set to be lower than a formation height of said second electrode.

5. The active gas generation apparatus according to claim 1 , wherein

an external region which is located immediately below said plurality of gas ejection ports, and to which said active gas is jetted through said plurality of gas ejection ports is defined as an apparatus downstream region, and

said plurality of gas ejection ports each has relatively small dimensions so that pressure in said gas internal flow path is higher than pressure in said apparatus downstream region.

6. The active gas generation apparatus according to claim 5 , wherein

said plurality of gas ejection ports are discretely arranged to be spiral in plan view.

7. The active gas generation apparatus according to claim 1 , further comprising

a cooling fin made of a dielectric, and sealed to said electrode unit.

8. The active gas generation apparatus according to claim 1 , wherein

a constituent material of said electrode body part is at least one of alumina, quartz, silicon nitride, aluminum nitride, and boron nitride.

9. The active gas generation apparatus according to claim 1 , wherein

said source gas is gas containing at least one of nitrogen, oxygen, fluorine, and hydrogen.

10. A deposition processing apparatus comprising:

said active gas generation apparatus according to claim 6 ; and

a deposition processing chamber located in a region including said apparatus downstream region, and having a deposition processing space to directly receive said active gas from said plurality of gas ejection ports.

11. The deposition processing apparatus according to claim 10 , wherein

said pressure in said gas internal flow path is set to 10 kPa to atmospheric pressure, and

pressure in said deposition processing space is set to less than said pressure in said gas internal flow path.