Light emitting diode for low temperature applications
It is described herein a light emitting diode ( 10 ) which may comprise a metal core printed circuit board ( 100 ), a mounting platform, and a thermal interface membrane located between the metal core printed circuit board and the mounting platform. The metal core printed circuit board may comprise at least one resistor ( 110 ), at least one lighting element ( 120 ), and at least one wire ( 130 ). The at least one resistor may be connected to the metal core printed circuit board by a first solder which is free of tin. The at least one wire may be connected to the metal core printed circuit board by a second solder which is free of tin. The at least one lighting element may be connected to the metal core printed circuit board by a third solder which is free of tin.
1. A light emitting diode comprising:
a metal core printed circuit board ( 100 ) having an outer perimeter ( 140 ) defining a first planar surface ( 150 ) and a second planar surface ( 160 ) opposite the first planar surface, said metal core printed circuit board comprising at least one lighting element ( 120 ) connected to the first planar surface, and at least one wire ( 130 ) connected to the first planar surface; and
wherein the at least one wire is configured to transfer electricity generated from a source outside the light emitting diode to the metal core printed circuit board, each wire of the at least one wire is connected to the first planar surface by a second solder which is free of tin, and each lighting element of the at least one lighting element is connected to the first planar surface by a third solder which is free of tin.
2. The light emitting diode of claim 1 , further comprising at least one resistor ( 110 ) connected to the first planar surface by a first solder which is free of tin.
3. The light emitting diode of claim 2 , wherein the first solder comprises indium.
4. The light emitting diode of claim 2 , wherein the first solder comprises indium and at least one metal selected from the group consisting of silver, lead, bismuth, and gallium.
5. The light emitting diode of claim 4 , wherein silver is present in the first solder at a level in a range of between 0.1% by weight and 10% by weight, indium is present in the first solder at a level in a range of between 85% by weight and 99.8% by weight, and the silver and indium combined account for 100% by weight of the first solder.
6. The light emitting diode of claim 4 , wherein lead is present in the first solder at a level in a range of between 40% by weight and 50% by weight, indium is present in the first solder at a level in a range of between 50% by weight and 60% by weight, and the lead and indium combined account for 100% by weight of the first solder.
7. The light emitting diode of claim 1 , wherein the second solder comprises indium.
8. The light emitting diode of claim 1 , wherein the second solder comprises indium and at least one metal selected from the group consisting of silver, lead, bismuth, and gallium.
9. The light emitting diode of claim 8 , wherein silver is present in the second solder at a level in a range of between 0.1% by weight and 10% by weight, indium is present in the second solder at a level in a range of between 85% by weight and 99.8% by weight, and the silver and indium combined account for 100% by weight of the second solder.
10. The light emitting diode of claim 8 , wherein lead is present in the second solder at a level in a range of between 40% by weight and 50% by weight, indium is present in the second solder at a level in a range of between 50% by weight and 60% by weight, and the lead and indium combined account for 100% by weight of the second solder.
11. The light emitting diode of claim 1 , wherein the third solder comprises indium.
12. The light emitting diode of claim 1 , wherein the third solder comprises indium and at least one metal selected from the group consisting of silver, lead, bismuth, and gallium.
13. The light emitting diode of claim 12 , wherein silver is present in the third solder at a level in a range of between 0.1% by weight and 10% by weight, indium is present in the third solder at a level in a range of between 85% by weight and 99.8% by weight, and the silver and indium combined account for 100% by weight of the third solder.
14. The light emitting diode of claim 12 , wherein lead is present in the third solder at a level in a range of between 40% by weight and 50% by weight, indium is present in the third solder at a level in a range of between 50% by weight and 60% by weight, and the lead and indium combined account for 100% by weight of the third solder.
15. The light emitting diode of claim 1 , further comprising a thermal interface membrane ( 300 ) in contact with the second planar surface.
16. The light emitting diode of claim 15 , wherein the thermal interface membrane has a thermal conductivity of at least 750 W/(m-K).
17. The light emitting diode of claim 15 , wherein the thermal interface membrane is free of an adhesive.
18. The light emitting diode of claim 15 , wherein the thermal interface membrane comprises graphite.
19. The light emitting diode of claim 15 , wherein the thermal interface membrane comprises silver.
20. The light emitting diode of claim 1 , further comprising a mounting platform ( 200 ) wherein the metal core printed circuit board is connected to the mounting platform by a plurality of screws ( 400 ).