Process solution composition for extreme ultraviolet lithography, and method for forming pattern by using same
View Patent ↗A processing solution composition for reducing collapse of a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source and a method of forming a pattern using the same are proposed. The processing solution composition includes 0.0001 to 1 wt % of a nonionic surfactant having an HLB (Hydrophilic-Lipophilic Balance) value of 9 to 16, 0.0001 to 1 wt % of an alkaline material selected from the group consisting of tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and mixtures thereof, and 98 to 99.9998 wt % of water, and is effective at reducing the collapse of a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source.
1. A processing solution composition for reducing collapse of a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source, comprising:
0.0001 to 1 wt % of a nonionic surfactant having Hydrophilic-Lipophilic Balance value of 9 to 13, wherein the nonionic surfactant is a polyoxyethylene alkyl ether;
0.0001 to 1 wt % of tetrabutylammonium hydroxide; and
98 to 99.9998 wt % of water.
2. A method of forming a photoresist pattern, comprising:
(a) forming a photoresist film by applying a photoresist on a semiconductor substrate;
(b) forming a photoresist pattern by exposing and developing the photoresist film; and
(c) cleaning the photoresist pattern with the processing solution composition of claim 1 .
3. The method of claim 2 , wherein the exposing is performed using an extreme-ultraviolet exposure source.