IP Library Granted Patent US 12,140,787
Granted Patent B2
US 12,140,787 · App. 17/055,682 · Granted Nov 12, 2024

Resonator structure, imaging element, and electronic apparatus

Inventor: Atsushi Toda (Kanagawa, JP)
Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
G02B5/288H01L27/14623H01L27/14627
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Quick Facts
Patent No.
US 12,140,787
App. No.
17/055,682
Granted
Nov 12, 2024
Kind
B2
Abstract

There is provided a resonator structure that obtains a highly accurate optical spectrum. The resonator structure includes a stacked structure that includes a semiconductor layer, a first resonator, a first reflection layer, a second resonator, a second reflection layer stacked in this order, allows light of a specific wavelength band to be transmitted therethrough, the semiconductor layer having a first average refractive index, the first resonator having a second average refractive index lower than the first average refractive index, and the first reflection layer having a third average refractive index higher than the second average refractive index.

Claims (22)

1. A resonator structure, comprising:

a stacked structure that includes a semiconductor layer, a first resonator, a first reflection layer, a second resonator, a second reflection layer stacked in this order, wherein

a thickness of the first resonator is less than or equal to 400 nm,

the stacked structure allows transmission of light of a specific wavelength band,

the semiconductor layer has a first average refractive index,

the first resonator has a second average refractive index lower than the first average refractive index, and

the first reflection layer has a third average refractive index higher than the second average refractive index.

2. The resonator structure according to claim 1 , wherein the second average refractive index is 1 or more and four or less.

3. The resonator structure according to claim 1 , wherein the second average refractive index is 1 or more and two or less.

4. The resonator structure according to claim 1 , wherein the second resonator has a refractive index distribution in a stacked plane.

5. The resonator structure according to claim 4 , wherein the second resonator includes:

a first portion that has a first refractive index, and

a second portion that is dispersed located in the first portion in the stacked plane, wherein the second portion has a second refractive index.

6. The resonator structure according to claim 1 , wherein the first reflection layer and the second reflection layer include a material including polycrystal silicon.

7. The resonator structure according to claim 6 , wherein each of a thickness of the first reflection layer and a thickness of the second reflection layer is 50 nm or less.

8. The resonator structure according to claim 1 , wherein

the first reflection layer and the second reflection layer include a material including polycrystal silicon, and

the first resonator and the second resonator include a material other than different from elemental silicon.

9. The resonator structure according to claim 8 , wherein a thickness of each of the first reflection layer and the second reflection layer is 50 nm or less.

10. The resonator structure according to claim 1 , further comprising a visible light cut filter that suppresses transmission of visible light.

11. The resonator structure according to claim 1 , wherein the first resonator includes a multilayer film structure in which a plurality of films is stacked.

12. The resonator structure according to claim 11 , wherein the plurality of films includes a material that includes at least one of silicon oxide, silicon nitride, tantalum oxide, or aluminum oxide.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 16, 2020
From: TODA, ATSUSHI
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 054375/0054 →
Priority Claims (1)
JP 2018-096234 · May 18, 2018 · national
Continuity (1)
Related Publication 20210191019A1 · Jun 24, 2021