Interconnection structures for perovskite tandem solar cells

1. A double junction tandem perovskite solar cell comprising:

a transparent conductive substrate;

a hole transport layer disposed on said conductive substrate;

a wide bandgap perovskite layer disposed on said hole transport layer;

an X layer disposed on said wide bandgap perovskite layer;

an interconnection layer disposed on said X layer, wherein said interconnection layer consists essentially of:

an ion-doped fullerene layer; and,

a SnO 2-x (0<x<1) layer having a thickness of about 2 nm to about 200 nm;

wherein x is from about 0.5 to about 0.95, and

a Y layer disposed on said SnO2-x (0<x<1) layer of said interconnection layer;

a narrow bandgap perovskite layer disposed on said Y layer;

an electron transport layer disposed on said narrow bandgap perovskite layer; and

an electrode disposed on said electron transport layer,

wherein

said Y layer does not comprise a conductive transparent oxide material;

said X layer is absent or present, and when absent, said ion-doped fullerene layer is disposed on said wide bandgap perovskite layer; and

said Y layer is absent or present, and when absent, said narrow bandgap perovskite layer is disposed on said metal oxide layer;

or,

a double junction tandem perovskite solar cell comprising:

a transparent conductive substrate;

an electron transport layer disposed on said conductive substrate;

a wide bandgap perovskite layer disposed on said electron transport layer;

a Y layer disposed on said wide bandgap perovskite layer;

an interconnection layer disposed on said Y layer, wherein said interconnection layer consists essentially of:

an ion-doped fullerene layer; and,

a SnO 2-x (0<x<1) layer having a thickness of about 2 nm to about 200 nm;

wherein x is from about 0.5 to about 0.95, and

an X layer disposed on said SnO 2-x (0<x<1) layer of said interconnection layer;

a narrow bandgap perovskite layer disposed on said X layer;

a hole transport layer disposed on said narrow bandgap perovskite layer; and

an electrode disposed on said hole transport layer,

wherein

said Y layer does not comprise a conductive transparent oxide material;

said X layer is absent or present, and when absent, said narrow bandgap perovskite layer is disposed on said ion-doped fullerene layer; and

said Y layer is absent or present, and when absent, said metal oxide layer is disposed on said wide bandgap perovskite layer.

2. The double junction tandem perovskite solar cell of claim 1 , wherein said ion in said ion-doped fullerene layer is selected from the group consisting of iodine (I − ) bromine (Br − ), chlorine (Cl − ), and fluorine(F − ); and wherein said ion-doped fullerene layer comprises a fullerene selected from the group consisting of C 60 , C 70 , C 60 self-assembly molecules, phenyl-C 61 -butryric acid methyl ester (PCBM), and indene C 60 bis adduct (ICBA).

3. The double junction tandem perovskite solar cell of claim 2 , wherein said ion is iodine (I).

4. The double junction tandem perovskite solar cell of claim 2 , wherein said fullerene is C 60 .

5. The double junction tandem perovskite solar cell of claim 1 , wherein said ion-doped fullerene layer has a thickness of about 30 nm.

6. The double junction tandem perovskite solar cell of claim 1 , wherein x in SnO 2-x (0<x<1) is about 0.15.

7. The double junction tandem perovskite solar cell of claim 6 , wherein SnO 2-x (0<x<1) is an alloy comprising p-type SnO and n-type SnO 2 , wherein said p-type SnO has a bandgap of about 0.7 eV to about 1.0 eV and said n-type SnO 2 has a bandgap of about 3.6 ev.

8. The double junction tandem perovskite solar cell of claim 1 , wherein said wide bandgap perovskite layer has a bandgap of about 1.5 eV to about 2 eV and said narrow bandgap perovskite layer has a bandgap of about 1.0 ev to about 1.5 ev.

9. The double junction tandem perovskite solar cell of claim 8 , wherein said wide bandgap perovskite layer has a bandgap of about 1.80 ev.

10. The double junction tandem perovskite solar cell of claim 8 , wherein said narrow bandgap perovskite layer has a bandgap of about 1.20 eV.

11. The double junction tandem perovskite solar cell of claim 1 , wherein said narrow and said wide bandgap perovskite layer are different from each other, and comprise an organic-inorganic halide perovskite of the formula ABX 3 wherein A comprises a cation selected from the group consisting of methylammonium (MA), tetramethylammonium, formamidinium (FA), cesium, rubidium, potassium, sodium, butylammonium, phenethylammonium, phenylammonium, guanidinium, and a combination thereof; B comprises a divalent metal selected from the group consisting of lead, tin, cadmium, germanium, zinc, nickel, platinum, palladium, mercury, titanium, silicon, and a combination thereof; and X is a halide selected from the group consisting of Cl, Br, F, I, and a combination thereof.

12. The double junction tandem perovskite solar cell of claim 1 , wherein said narrow bandgap perovskite layer has a composition of Cs 0.05 MA 0.45 F A 0.5 Pb 0.5 Sn 0.5 I 3 having a bandgap of about 1.23 eV and said wide bandgap perovskite layer has a composition of Cs 0.2 FA 0.8 PbI 1.8 Br 1.2 having a bandgap of about 1.78 eV.

13. The double junction tandem perovskite solar cell of claim 1 , wherein said electron transport layer comprises a material selected from the group consisting of C 60 , C 70 , C 60 self-assembly molecules, phenyl-C 61 -butryric acid methyl ester (PCBM), indene C 60 bis adduct (ICBA), TiO 2 , SnO 2 , ZnO, bathocuproine (BCP), and a combination thereof.

14. The double junction tandem perovskite solar cell of claim 1 , wherein said hole transport layer comprises a material selected from the group consisting of poly(triaryl amine) (PTAA), poly(3-hexylthiophene) (P3HT), poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), NiO X , N4,N40-bis(4-(6-((3-ethyloxetan-3yl)methoxy)hexyl)phenyl)-N4, N40-diphenyl-biphenyl-4,40-diamine (TPD), 2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (spiro-OMeTAD), CuSCN, and a combination thereof.

15. The double junction tandem perovskite solar cell of claim 1 , wherein said conductive substrate is selected from the group consisting of Indium Tin Oxide (ITO), Aluminum Doped Zinc Oxide (AZO), and Fluorine doped Tin Oxide (FTO).

16. The double junction tandem perovskite solar cell of claim 1 , wherein said electrode is selected from the group consisting of Ag, Au, Cu, Al, Cr, Bi, graphite, and a combination thereof.

17. The double junction tandem perovskite solar cell of claim 1 , wherein said X layer and said Y layer are both absent.

18. The double junction tandem perovskite solar cell of claim 1 , wherein said X layer is present and comprises a material selected from the group consisting of phenyl-C 61 -butryric acid methyl ester (PCBM), indene C 60 bis adduct (ICBA), TiO 2 , SnO 2 , ZnO, bathocuproine (BCP), and a combination thereof.

19. The double junction tandem perovskite solar cell of claim 18 , wherein said Y layer is absent.

20. The double junction tandem perovskite solar cell of claim 1 , wherein said Y layer is present and comprises a material selected from the group consisting of poly(triaryl amine) (PTAA), poly(3-hexylthiophene) (P3HT), poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), NiO x , N4,N40-bis(4-(6-((3-ethyloxetan-3y1)methoxy)hexyl)phenyl)-N4, N40-diphenyl-biphenyl-4,40-diamine (TPD), 2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (spiro-OMeTAD), CuSCN, and a combination thereof.

21. The double junction tandem perovskite solar cell of claim 20 , wherein said X layer is absent.

22. The double junction tandem perovskite solar cell of claim 1 , comprising:

a transparent conductive substrate;

a hole transport layer disposed on said conductive substrate;

a wide bandgap perovskite layer disposed on said hole transport layer;

an X layer disposed on said wide bandgap perovskite layer;

an interconnection layer disposed on said X layer, wherein said interconnection layer consists essentially of:

an ion-doped fullerene layer; and,

a SnO 2-x (0<x<1) layer having a thickness of about 2 nm to about 200 nm;

wherein x is from about 0.5 to about 0.95, and

a Y layer disposed on said SnO 2-x (0<x<1) layer of said interconnection layer;

a narrow bandgap perovskite layer disposed on said Y layer;

an electron transport layer disposed on said narrow bandgap perovskite layer; and

an electrode disposed on said electron transport layer,

wherein

said Y layer does not comprise a conductive transparent oxide material;

said X layer is absent or present, and when absent, said ion-doped fullerene layer is disposed on said wide bandgap perovskite layer; and

said Y layer is absent or present, and when absent, said narrow bandgap perovskite layer is disposed on said metal oxide layer.

23. The double junction tandem perovskite solar cell of claim 22 , wherein the metal oxide layer has a thickness of about 5 nm to about 150 nm.

24. The double junction tandem perovskite solar cell of claim 1 , wherein the metal oxide layer has a thickness of about 5 nm to about 150 nm.