Embedded packaging for high voltage, high temperature operation of power semiconductor devices
Embedded packaging for high voltage, high temperature operation of power semiconductor devices is disclosed, wherein a semiconductor die is embedded in a dielectric body comprising a dielectric polymer composition characterized by a conductivity transition temperature Tc, a first activation energy Ea Low for conduction in a temperature range below Tc, and a second activation energy Ea High for conduction in a temperature range above Tc. A test methodology is disclosed for selecting a dielectric epoxy composition having values of Tc, Ea Low , and Ea High that provide a conduction value below a required reliability threshold, e.g. ≤5×10 −13 S/cm, for a specified operating voltage and temperature. For example, the power semiconductor device comprises a GaN HEMT rated for operation at ≥100V wherein the package body is formed from a laminated dielectric epoxy composition for operation at >150 C, wherein Tc is ≥75 C, Ea Low is ≤0.2 eV and Ea High is ≤1 eV, for improved reliability for high voltage, high temperature operation.
1. A power semiconductor device comprising:
a package comprising a dielectric body;
a power semiconductor die embedded in the dielectric body of the package;
the power semiconductor die being rated for operation with at least one of a rated operating voltage ≥100V and a rated operating temperature ≥100 C,
wherein, the dielectric body comprises a dielectric polymer composition that provides a conductivity less than a reliability threshold value of conduction for the rated operating voltage and temperature.
2. The power semiconductor device of claim 1 , wherein the reliability threshold value of conduction is ≤2×10 −13 S/cm.
3. The power semiconductor device of claim 1 , wherein the reliability threshold value of conduction is ≤5×10 −14 S/cm.
4. The power semiconductor device of claim 1 , wherein the reliability threshold of conduction comprises a current leakage ≤3×10 −8 A/cm 2 .
5. The power semiconductor device of claim 1 , wherein the reliability threshold of conduction comprises a current leakage ≤3×10 −9 A/cm 2 .
6. The power semiconductor device of claim 1 , wherein the dielectric polymer composition is characterized by:
a conduction transition temperature Tc,
a first activation energy Ea Low for conduction in a first range of temperatures below Tc,
a second activation energy Ea High for conduction in a second range of temperatures above Tc, and
the dielectric polymer composition having values of Tc, Ea Low , and Ea High that provide said conductivity less than a reliability threshold value of conduction for the rated operating voltage and temperature.
7. The power semiconductor device of claim 6 , wherein the first activation energy Ea Low is a specified first threshold activation energy of ≤0.2 eV.
8. The semiconductor device of claim 6 , wherein the second activation energy Ea High is a specified second threshold activation energy of ≤1 eV.
9. The power semiconductor device of claim 6 , wherein Tc is greater than the rated operating temperature and Ea Low has a value ≤0.2 eV that maintain the conduction below a reliability threshold of ≤2×10 −13 S/cm.
10. The power semiconductor device of claim 6 , wherein Tc is less than the rated operating temperature, Ea Low has a value ≤0.2 eV, and Ea High has a value ≤1 eV that maintains the conduction below a reliability threshold of ≤5×10 −14 S/cm.
11. The power semiconductor device of claim 6 , wherein Tc is less than the rated operating temperature, Ea Low has a value ≤0.2 eV, and Ea High has a value ≤1 eV that maintains the conduction below a reliability threshold of ≤2×10 −13 S/cm.
12. The power semiconductor device of claim 6 , wherein Tc is greater than the rated operating temperature and Ea Low has a value ≤0.2 eV that maintain the conduction below a reliability threshold of ≤5×10 −14 S/cm.
13. The power semiconductor device of claim 1 , wherein the dielectric polymer composition is a dielectric epoxy composition.
14. The power semiconductor device of claim 1 , wherein the dielectric polymer composition is a laminated epoxy composition.
15. The power semiconductor device of claim 6 , wherein Tc is ≥100 C.
16. The power semiconductor device of claim 6 , wherein Tc is ≥75 C.
17. The power semiconductor device of claim 1 , wherein the power semiconductor die comprises at least one of a power transistor and a power diode.
18. The power semiconductor device of claim 17 , wherein the power transistor comprises a lateral GaN power transistor.
19. The power semiconductor device of claim 17 , wherein the power switching transistor comprises a lateral GaN e-HEMT which is rated for ≥100V operation.
20. The power semiconductor device of claim 17 , wherein the power switching transistor comprises a lateral GaN e-HEMT which is rated for ≥600V operation.
21. The power semiconductor device of claim 17 , wherein the power switching transistor comprises a SiC MOSFET or a Si IGBT.