Semiconductor apparatus
A semiconductor apparatus includes: a metal plate; a semiconductor device mounted on the metal plate; an external terminal electrically connected to the semiconductor device or the metal plate; a metal wire wire-bonded to the semiconductor device, the metal plate or the external terminal; and a package covering and resin-sealing the semiconductor device, the metal plate and the metal wire, wherein the metal wire is bonded to a top-layer electrode of the semiconductor device at a first bond and a second bond, and the metal wire includes a low loop that is positioned between the first bond and the second bond, is adjacent to at least one of the first bond and the second bond and is not in contact with the top-layer electrode.
1. A semiconductor apparatus comprising:
a metal plate;
a semiconductor device mounted on the metal plate;
an external terminal electrically connected to the semiconductor device or the metal plate;
a metal wire wire-bonded to the semiconductor device and connecting the semiconductor device to the external terminal; and
a package covering and resin-sealing the semiconductor device, the metal plate and the metal wire,
wherein the metal wire is bonded to a top-layer electrode of the semiconductor device at a first bond and a second bond, and the metal wire is directly connected from the second bond to the external terminal, and
the metal wire includes a low loop that is positioned between the first bond and the second bond, is adjacent to at least one of the first bond and the second bond and is not in contact with the top-layer electrode.
2. The semiconductor apparatus according to claim 1 , wherein the metal wire is linearly in contact with the top-layer electrode between the low loop adjacent to the first bond and the low loop adjacent to the second bond.
3. The semiconductor apparatus according to claim 1 , wherein
the metal wire includes a second low loop that is not in contact with the top-layer electrode; and
the metal wire is bonded to multiple points of the top-layer electrode between the low loop that is adjacent to the first bond and the second low loop that is adjacent to the second bond.
4. The semiconductor apparatus according to claim 2 , wherein
the metal wire includes a second low loop that is not in contact with the top-layer electrode; and
the metal wire is bonded to multiple points of the top-layer electrode between the low loop that is adjacent to the first bond and the second low loop that is adjacent to the second bond.
5. The semiconductor apparatus according to claim 1 , wherein the metal wire is separated from the top-layer electrode by a certain distance and is not in contact with the top-layer electrode between the low loop adjacent to the first bond and the low loop adjacent to the second bond.
6. The semiconductor apparatus according to claim 1 , wherein a height of the low loop of the metal wire with respect to the top-layer electrode is less than twice a diameter of the metal wire.
7. The semiconductor apparatus according to claim 2 , wherein a height of the low loop of the metal wire with respect to the top-layer electrode is less than twice a diameter of the metal wire.
8. The semiconductor apparatus according to claim 3 , wherein a height of the low loop of the metal wire with respect to the top-layer electrode is less than twice a diameter of the metal wire.
9. The semiconductor apparatus according to claim 4 , wherein a height of the low loop of the metal wire with respect to the top-layer electrode is less than twice a diameter of the metal wire.
10. The semiconductor apparatus according to claim 5 , wherein a height of the low loop of the metal wire with respect to the top-layer electrode is less than twice a diameter of the metal wire.
11. The semiconductor apparatus according to claim 1 , wherein the metal wire is made of a conductive metal containing any of Al, Cu, and Ag.
12. The semiconductor apparatus according to claim 2 , wherein the metal wire is made of a conductive metal containing any of Al, Cu, and Ag.
13. The semiconductor apparatus according to claim 3 , wherein the metal wire is made of a conductive metal containing any of Al, Cu, and Ag.
14. The semiconductor apparatus according to claim 4 , wherein the metal wire is made of a conductive metal containing any of Al, Cu, and Ag.
15. The semiconductor apparatus according to claim 5 , wherein the metal wire is made of a conductive metal containing any of Al, Cu, and Ag.
16. The semiconductor apparatus according to claim 6 , wherein the metal wire is made of a conductive metal containing any of Al, Cu, and Ag.
17. The semiconductor apparatus according to claim 7 , wherein the metal wire is made of a conductive metal containing any of Al, Cu, and Ag.
18. The semiconductor apparatus according to claim 8 , wherein the metal wire is made of a conductive metal containing any of Al, Cu, and Ag.
19. The semiconductor apparatus according to claim 9 , wherein the metal wire is made of a conductive metal containing any of Al, Cu, and Ag.
20. The semiconductor apparatus according to claim 10 , wherein the metal wire is made of a conductive metal containing any of Al, Cu, and Ag.
21. A semiconductor apparatus comprising:
a metal plate;
a semiconductor device mounted on the metal plate;
an external terminal electrically connected to the semiconductor device or the metal plate;
a metal wire wire-bonded to the semiconductor device, the metal plate or the external terminal; and
a package covering and resin-sealing the semiconductor device, the metal plate and the metal wire,
wherein the metal wire is bonded to a top-layer electrode of the semiconductor device at a first bond and a second bond, and
the metal wire includes a low loop and a second low loop that are positioned between the first bond and the second bond, the low loop is adjacent to the first bond and is not in contact with the top-layer electrode, and the second low loop is adjacent to the second bond and is not in contact with the top-layer electrode, and the metal wire is bonded to multiple points of the top-layer electrode between the low loop and the second low loop.
22. A semiconductor apparatus comprising:
a metal plate;
a semiconductor device mounted on the metal plate;
an external terminal electrically connected to the semiconductor device or the metal plate;
a metal wire wire-bonded to the semiconductor device, the metal plate or the external terminal; and
a package covering and resin-sealing the semiconductor device, the metal plate and the metal wire,
wherein the metal wire is bonded to a top-layer electrode of the semiconductor device at a first bond and a second bond,
the metal wire includes a low loop that is positioned between the first bond and the second bond, is adjacent to at least one of the first bond and the second bond and is not in contact with the top-layer electrode, and
a height of the low loop of the metal wire with respect to the top-layer electrode is less than twice a diameter of the metal wire.