Semiconductor device and manufacturing method of semiconductor device

1. A method of manufacturing a semiconductor device, the method comprising:

forming supports penetrating a well structure, the supports protruding upward from the well structure;

forming a stack structure on the supports, the stack structure penetrated by holes and having an etch stop pattern disposed on a portion of a bottom surface of the stack structure facing the well structure;

forming a multi-layered memory layer on a surface of an opening region including a horizontal space opened between the well structure and the stack structure and the holes;

forming a channel layer on a surface on the multi-layered memory layer;

forming a gap fill insulating layer on the channel layer, the gap fill insulating layer filling the opening region; and

forming a slit penetrating the etch stop pattern from the stack structure, the slit separating the etch stop pattern into source gate patterns, wherein the slit is formed such that each of the source gate patterns has an inclined surface toward the slit.

2. The method of claim 1 , further comprising:

forming a first trench penetrating the multi-layer memory layer and the channel layer under the slit, the first trench extending to the inside of the gap fill insulating layer; and

forming a doped semiconductor pattern extending from the inside of the first trench to between the source gate patterns.

3. The method of claim 2 , further comprising, before the forming of the doped semiconductor pattern,

forming a channel protective layer on a sidewall of the first trench;

forming a second trench penetrating the gap fill insulating layer, the channel layer, and the multi-layered memory layer, which are exposed under the first trench, the second trench extending to the inside of the well structure;

forming a well contact structure filling the second trench;

forming an inter-well-source insulating layer by oxidizing an upper portion of the well contact structure; and

removing the channel protective layer.

4. The method of claim 3 , further comprising, after the channel protective layer is removed, forming an undercut region under the channel layer adjacent to the first trench by etching the gap fill insulating layer exposed through the sidewall of the first trench,

wherein the doped semiconductor pattern is formed to completely fill the undercut region.

5. The method of claim 2 , wherein the stack structure includes sacrificial layers alternately stacked with interlayer insulating layers,

wherein the method further comprises: after the forming of the doped semiconductor pattern,

forming gate regions by removing the sacrificial layers through the slit;

forming a blocking insulating layer extending along surfaces of the gate regions, sidewalls of the interlayer insulating layers facing the slit, surfaces of the source gate patterns, and a surface of the doped semiconductor pattern;

forming conductive patterns on the blocking insulating layer, the conductive patterns filling the gate regions; and

forming a spacer insulating layer on a sidewall of the slit, the spacer insulating layer covering the blocking insulating layer and the conductive patterns.

6. The method of claim 2 , further comprising forming a source junction in the channel layer under the source gate patterns through a heat treatment process of diffusing a dopant in the doped semiconductor pattern into the channel layer.

7. The method of claim 2 , wherein the well structure includes a dopant of a first conductivity type, and

the doped semiconductor pattern includes a dopant of a second conductivity type different from the first conductivity type.

8. The method of claim 1 , further comprising:

forming a protective layer on the sidewall of the slit;

forming a first trench penetrating the multi-layered memory layer and the channel layer not blocked by the protective layer, the first trench extending to the inside of the gap fill insulating layer;

forming a doped semiconductor pattern extending from the inside of the first trench to between the source gate patterns; and

forming a protective pattern exposing a first part of the doped semiconductor pattern by etching the protective layer.

9. The method of claim 8 , wherein the forming of the protective layer includes:

forming a nitride layer on the sidewall of the slit; and

forming an oxide layer on the nitride layer, the oxide layer extending along the sidewall of the slit.

10. The method of claim 9 , wherein the forming of the protective pattern includes:

exposing the first part of the doped semiconductor pattern by etching a portion of the oxide layer;

forming an etching protective layer by oxidizing a surface of the first part of the doped semiconductor pattern; and

etching a portion of the nitride layer such that a sidewall of the stack structure is exposed.

11. The method of claim 8 , further comprising:

forming a spacer insulating layer on the protective pattern, the spacer insulating layer extending along the sidewall of the slit;

changing the first part of the doped semiconductor pattern into a metal silicide layer using a silicidizing process;

forming a metal barrier layer on surfaces of the spacer insulating layer and the metal silicide layer; and

forming a metal layer on the metal barrier layer such that the slit is completely filled.

12. A method of manufacturing a semiconductor device, the method comprising:

forming supports penetrating a well structure, the supports protruding upward from the well structure;

forming a stack structure on the supports, the stack structure penetrated by holes and having an etch stop pattern disposed on a portion of a bottom surface of the stack structure facing the well structure;

forming a multi-layered memory layer on a surface of an opening region including a horizontal space opened between the well structure and the stack structure and the holes;

forming a channel layer on a surface on the multi-layered memory layer;

forming a gap fill insulating layer on the channel layer, the gap fill insulating layer filling the opening region;

forming a slit penetrating the etch stop pattern from the stack structure, the slit separating the etch stop pattern into source gate patterns;

forming a protective layer on a sidewall of the slit;

forming a first trench penetrating the multi-layered memory layer and the channel layer not blocked by the protective layer, the first trench extending to the inside of the gap fill insulating layer;

forming a doped semiconductor pattern extending from the inside of the first trench to between the source gate patterns; and

forming a protective pattern exposing a first part of the doped semiconductor pattern by etching the protective layer.

13. The method of claim 12 , further comprising: before the forming of the doped semiconductor pattern,

forming a channel protective layer on a sidewall of the first trench;

forming a second trench penetrating the gap fill insulating layer, the channel layer, and the multi-layered memory layer, which are exposed under the first trench, the second trench extending to the inside of the well structure;

forming a well contact structure filling the second trench;

forming an inter-well-source insulating layer by oxidizing an upper portion of the well contact structure; and

removing the channel protective layer.

14. The method of claim 13 , further comprising, after the channel protective layer is removed, forming an undercut region under the channel layer adjacent to the first trench by etching the gap fill insulating layer exposed through the sidewall of the first trench,

wherein the doped semiconductor pattern is formed to completely fill the undercut region.