Semiconductor package including stacked semiconductor chips
A semiconductor package includes a sub semiconductor package disposed over a substrate. The sub semiconductor package includes a sub semiconductor chip with chip pads on its upper surface, a sub molding layer that surrounds the sub semiconductor chip, and a redistribution conductive layer that is connected to each of the chip pads and extends over an upper surface of the sub molding layer. The redistribution conductive layer includes a signal redistribution conductive layer that extends onto an edge of the sub molding layer and has a signal redistribution pad on its end portion and a power redistribution conductive layer with a length that is shorter than a length of the signal redistribution conductive layer. The semiconductor package also includes a sub signal interconnector, sub power interconnector, and at least one main semiconductor chip formed over the sub semiconductor package and electrically connected to the substrate or the sub semiconductor chip.
1. A semiconductor package, comprising:
a substrate;
a sub semiconductor package disposed over the substrate, wherein the sub semiconductor package includes a sub semiconductor chip with chip pads on its upper surface, a sub molding layer that surrounds side surfaces of the sub semiconductor chip, and a redistribution conductive layer that is connected to each of the chip pads and extends over an upper surface of the sub molding layer, wherein the redistribution conductive layer includes a signal redistribution conductive layer that extends onto an edge of the sub molding layer with a signal redistribution pad on its end portion and includes a power redistribution conductive layer with a length that is shorter than a length of the signal redistribution conductive layer;
a sub signal interconnector connecting the signal redistribution pad to the substrate;
a sub power interconnector extending in a vertical direction under the power redistribution conductive layer to connect the power redistribution conductive layer to the substrate; and
at least one main semiconductor chip formed over the sub semiconductor package and electrically connected to the substrate or the sub semiconductor chip.
2. The semiconductor package according to claim 1 , wherein the sub power interconnector includes:
a penetrating electrode with an upper surface that is connected to the power redistribution conductive layer, the penetrating electrode penetrating the sub molding layer; and
a connection electrode disposed between the sub molding layer and the substrate, the connection electrode with an upper surface that is connected to the penetrating electrode and a lower surface that is connected to the substrate.
3. The semiconductor package according to claim 2 , further comprising:
a dummy connection electrode disposed between the sub molding layer and the substrate without being connected to the penetrating electrode.
4. The semiconductor package according to claim 1 , wherein the sub signal interconnector includes a bonding wire.
5. The semiconductor package according to claim 1 , wherein a power supply path that passes through the power redistribution conductive layer, the sub power interconnector, and the substrate is formed.
6. The semiconductor package according to claim 1 , wherein one power redistribution conductive layer is connected to two or more sub power interconnectors, wherein the two or more sub power interconnectors are spaced apart from each other.
7. The semiconductor package according to claim 1 , wherein the chip pads are disposed along first and second side edges of the sub semiconductor chip in a first direction and disposed along third and fourth side edges of the sub semiconductor chip in a second direction, the second direction being perpendicular to the first direction,
wherein the signal redistribution pad includes a plurality of signal redistribution pads that are disposed at first and second side edges of the sub molding layer in the first direction,
wherein the signal redistribution conductive layer includes a plurality of signal redistribution conductive layers,
wherein some of the signal redistribution conductive layers, which are connected to the chip pads that are disposed at the first and third side edges of the sub semiconductor chip in the first and second directions, extend toward the signal redistribution pads that are disposed at the first side edge of the sub molding layer in the first direction, and
wherein a rest of the signal redistribution conductive layers, which are connected to the chip pads that are disposed at the second and fourth side edges of the sub semiconductor chip in the first and second directions, extend toward the signal redistribution pads that are disposed at the second side edge of the sub molding layer in the first direction.
8. The semiconductor package according to claim 7 , wherein the signal redistribution conductive layers form a spiral shape, centering around the sub semiconductor chip.
9. The semiconductor package according to claim 7 , wherein the substrate includes substrate pads that are disposed at a first side edge and a second side edge of the substrate in the first direction,
wherein the sub signal interconnector includes a plurality of sub signal interconnectors, and
wherein the sub signal interconnectors connect the signal redistribution pads that are disposed at the first side edge of the sub molding layer in the first direction, to the substrate pads that are disposed at the first side edge of the substrate in the first direction, and connect the signal redistribution pads that are disposed at the second side edge of the sub molding layer in the first direction, to the substrate pads that are disposed at the second side edge of the substrate in the first direction.
10. The semiconductor package according to claim 7 , wherein the at least one main semiconductor chip includes:
at least one first main semiconductor chip connected to the signal redistribution pads that are disposed at the first side edge of the sub molding layer in the first direction through first main interconnectors; and
at least one second main semiconductor chip connected to the signal redistribution pads that are disposed at the second side edge of the sub molding layer in the first direction through second main interconnectors.
11. The semiconductor package according to claim 10 , wherein the signal redistribution pads are not covered by the first and second main semiconductor chips.
12. The semiconductor package according to claim 1 , wherein the at least one main semiconductor chip includes memory, and the sub semiconductor chip includes a memory controller.
13. The semiconductor package according to claim 1 , wherein the substrate includes substrate pads that are disposed at a first side edge and a second side edge of the substrate in a first direction, and
wherein the at least one main semiconductor chip includes:
at least one first main semiconductor chip connected to the substrate pads that are disposed at the first side edge of the substrate through first main interconnectors; and
at least one second main semiconductor chip connected to the substrate pads that are disposed at the second side edge of the substrate through second main interconnectors.
14. The semiconductor package according to claim 13 , wherein the at least one first main semiconductor chip comprises a plurality of first main semiconductor chips that are offset-stacked from the first side edge of the substrate toward the second side edge of the substrate in the first direction, and
wherein the at least one second main semiconductor chip comprises a plurality of second main semiconductor chips that are offset-stacked from the second side edge of the substrate toward the first side edge of the substrate in the first direction.