Self aligned replacement metal source/drain FINFET
A fin-shaped field effect transistor (finFET) device comprising includes a substrate. an insulating layer displaced over the substrate, and a fin. The device also includes a gate formed over the fin, the gate including: a gate stack; and a high-k dielectric on opposing side of the gate stack. The device further includes metallic source and drain regions formed over the fin and on opposing sides of the gate.
1. A fin-shaped field effect transistor (finFET) device comprising:
a first fin and an adjacent second fin, both fins extending in a first direction, each fin comprising a channel region, and a source region and a drain region disposed on opposite sides of the channel region, wherein a portion of each of the source and drain regions is recessed relative to the channel region of its respective fin;
a gate structure extending in a second direction orthogonal to the first direction, disposed over the channel region of both fins; and
a source metal fill region and a drain metal fill region disposed on opposite sides of the gate structure, each of the source and drain metal fill regions comprising an upper portion, and first and second lower portions corresponding to the first fin and the second fin respectively, wherein:
the upper portion and the lower portions of the source metal fill region comprise a continuous metal fill material;
the upper portion and the lower portions of the drain metal fill region comprise the continuous metal fill material;
the upper portion of each of the source and drain metal fill regions extends in the second direction past the first fin and past the second fin;
sidewall spacers are disposed between the upper portion of each of the source and drain metal fill regions and conductive portions of the gate structure;
the first lower portions of the source and drain metal fill regions are in-line with the channel region of the first fin and are disposed in the recessed portions of the source and drain regions of the first fin;
the second lower portions of the source and drain metal fill regions are in-line with the channel region of the second fin and are disposed in the recessed portions of the source and drain regions of the second fin;
the first and second lower portions of the source metal fill region are separated in the second direction by interlayer dielectric material; and
the first and second lower portions of the drain metal fill region are separated in the second direction by interlayer dielectric material.
2. The finFET device of claim 1 , further comprising: a source silicide layer and a drain silicide layer disposed on the opposite sides of each channel region, wherein each source and drain silicide layer comprises a first portion disposed between a corresponding channel region and a corresponding lower portion of a source or drain metal fill region.
3. The finFET device of claim 2 , wherein the source and drain silicide layers each comprise a second portion disposed between a top surface of a recessed portion of a source or drain region of a corresponding fin and a corresponding lower portion of a source or drain metal fill region.
4. The finFET device of claim 3 , wherein the first and second portions of the source and drain silicide layers are contiguous.
5. The finFET device of claim 2 , wherein the source and drain silicide layers at least partially underlies an outer edge of a corresponding sidewall spacer.
6. The finFET device of claim 1 , wherein each upper portion of the source and drain metal fill regions is disposed within interlayer dielectric material adjacent to the gate structure.
7. The finFET device of claim 2 , wherein the source and drain silicide layers comprise nickel, platinum, or erbium.
8. The finFET device of claim 1 , wherein the source and drain metal fill regions comprise tungsten, aluminum, or copper.
9. A field effect transistor device comprising:
a first fin and an adjacent second fin, both fins extending in a first direction, each fin comprising a channel region, and a source region and a drain region disposed on opposite sides of the channel region, wherein a portion of the source and drain regions is recessed relative to the channel region of its respective fin;
a gate structure extending in a second direction orthogonal to the first direction, disposed over the channel region of both fins; and
a source metal fill region and a drain metal fill region disposed on opposite sides of the gate structure, the source and drain metal fill regions comprising an upper portion, and first and second lower portions corresponding to the first fin and the second fin respectively, wherein:
the upper portion and the lower portions of the source metal fill region comprise a continuous metal fill material;
the upper portion and the lower portions of the drain metal fill region comprise the continuous metal fill material;
the upper portion of the source and drain metal fill regions extends in the second direction past the first fin and past the second fin;
sidewall spacers are disposed between the upper portion of the source and drain metal fill regions and conductive portions of the gate structure;
the first lower portions of the source and drain metal fill regions are self-aligned with the channel region of the first fin;
the second lower portions of the source and drain metal fill regions are self-aligned with the channel region of the second fin;
the first and second lower portions of the source metal fill region are separated in the second direction by interlayer dielectric material; and
the first and second lower portions of the drain metal fill region are separated in the second direction by interlayer dielectric material.
10. The field effect transistor device of claim 9 , wherein the self-aligned first and second lower portions each have a cross-sectional shape that is substantially the same as a cross-sectional shape of the corresponding channel region.
11. The field effect transistor device of claim 9 , further comprising:
a source silicide layer and a drain silicide layer disposed on the opposite sides of each channel region, wherein the source and drain silicide layers comprises:
a first portion disposed between a corresponding channel region and a corresponding lower portion of a source or drain metal fill region; and
a second portion disposed between a top surface of a recessed portion of a source or drain region of a corresponding fin and a corresponding lower portion of a source or drain metal fill region.
12. The field effect transistor device of claim 9 , wherein each upper portion of the source and drain metal fill regions is disposed within interlayer dielectric material adjacent to the gate structure.
13. The field effect transistor device of claim 11 , wherein the source and drain silicide layers comprise nickel, platinum, or erbium.
14. The field effect transistor device of claim 9 , wherein the source and drain metal fill regions comprise tungsten, aluminum, or copper.
15. A field effect transistor device, comprising:
a first fin and an adjacent second fin, both fins extending in a first direction, each fin comprising a channel region, and a source region and a drain region disposed on opposite sides of the channel region, wherein a portion of the source and drain regions is recessed relative to the channel region of its respective fin;
a gate structure extending in a second direction orthogonal to the first direction, disposed over the channel region of both fins;
a source metal fill region and a drain metal fill region disposed on opposite sides of the gate structure, the source and drain metal fill regions comprising an upper portion, and first and second lower portions corresponding to the first fin and the second fin respectively; and
a source silicide layer and a drain silicide layer disposed on the opposite sides of each channel region, wherein:
the upper portion and the lower portions of the source metal fill region comprise a continuous metal fill material;
the upper portion and the lower portions of the drain metal fill region comprise the continuous metal fill material;
the upper portion of the source and drain metal fill regions extends in the second direction past the first fin and past the second fin;
sidewall spacers are disposed between the upper portion of the source and drain metal fill regions and conductive portions of the gate structure;
the first lower portions of the source and drain metal fill regions are in-line with the channel region of the first fin;
the second lower portions of the source and drain metal fill regions are in-line with the channel region of the second fin;
the first and second lower portions of the source metal fill region are separated in the second direction by interlayer dielectric material;
the first and second lower portions of the drain metal fill region are separated in the second direction by interlayer dielectric material; and
the source and drain silicide layers comprise:
a first portion disposed between a corresponding channel region and a corresponding lower portion of a source or drain metal region; and
a second portion disposed between a top surface of a recessed portion of a source or drain region of a corresponding fin and a corresponding lower portion of a source or drain metal region.
16. The field effect transistor device of claim 15 , wherein the first and second lower portions of the source and drain metal fill regions are self-aligned to the corresponding channel region in the first direction.
17. The field effect transistor device of claim 16 , wherein the self-aligned first and second lower portions have a cross-sectional shape that is substantially the same as a cross-sectional shape of the corresponding channel region.
18. The field effect transistor device of claim 15 , wherein each upper portion of the source and drain metal fill regions is disposed within interlayer dielectric material adjacent to the gate structure.
19. The field effect transistor device of claim 15 , wherein the source and drain silicide layers comprise nickel, platinum, or erbium.
20. The field effect transistor device of claim 15 , wherein the source and drain metal fill regions comprise tungsten, aluminum, or copper.