DIFFERENTIAL MAGNETOELECTRIC SPIN ORBIT LOGIC
A differential magnetoelectric spin-orbit (MESO) logic device is provided where two ports are used to connect the spin orbital module of the MESO device and a ferroelectric capacitor. In some examples, an insulating layer is added to decouple current paths.
1 . An apparatus comprising:
a first cell comprising a first magnetoelectric material, a first spin orbit material, and a first magnet, wherein the first magnet is between the first spin orbit material and the first magnetoelectric material;
a second cell comprising a second magnetoelectric material, a second spin orbit material, and a second magnet, wherein the second magnet is between the second spin orbit material and the second magnetoelectric material;
a first conductor coupled to the first spin orbit material and a first terminal of the second magnetoelectric material; and
a second conductor coupled to the first spin orbit material and a second terminal of the second magnetoelectric material.
2 . The apparatus of claim 1 , wherein the first cell comprises:
a first structure comprising the first magnetoelectric material;
a second structure comprising the first magnet, wherein the second structure is adjacent to the first structure; and
a third structure comprising the first spin orbit material, wherein the third structure is adjacent to the second structure, wherein the second structure is between the first structure and third structure.
3 . The apparatus of claim 2 , wherein the second cell comprises:
a fourth structure comprising the second magnetoelectric material;
a fifth structure comprising the second magnet, wherein the fifth structure is adjacent to the fourth structure; and
a sixth structure comprising the second spin orbit material, wherein the sixth structure is adjacent to the fifth structure, wherein the fifth structure is between the fourth structure and sixth structure.
4 . The apparatus of claim 3 , wherein the third or sixth structures include one or more of: β-Ta, β-W, W, Pt, Cu doped with Iridium, Cu doped with Bismuth, or Cu doped an element of 3d, 4d, 5d, 4f, or 5f of periodic table groups.
5 . The apparatus of claim 3 , wherein the first or fourth structures include BFO, SRO, and STO.
6 . The apparatus of claim 3 comprises:
a first transistor controllable by a first phase of a clock, wherein the first transistor is coupled to the third structure; and
a second transistor controllable by a second phase of the clock, wherein the second transistor is coupled to sixth structure, wherein the first phase and second phase are different and do not overlap.
7 . The apparatus of claim 3 , wherein the first magnet is a first ferromagnet, and wherein the second structure comprises:
a second ferroelectric magnet; and
an insulative ferroelectric magnet between the first ferroelectric magnet and the second ferroelectric magnet.
8 . The apparatus of claim 1 , wherein the first or second magnetoelectric material include one or more of: BiFeO 3 , LuFeO 2 , LuFe 2 O 4 , or La doped BiFeO 3 , or wherein the multiferroic material includes one of: Bi, Fe, O, Lu, or La.
9 . The apparatus of claim 1 , wherein the first or second magnets include a paramagnet or a ferromagnet, or wherein the first and second magnets comprises a material which includes one or more of: Pt, Pd, W, Ce, Al, Li, Mg, Na, Cr, O, Co, Dy, Er, Eu, Gd, Fe, Nd, K, Pr, Sm, Tb, Tm, or V.
10 . The apparatus of claim 1 , wherein the first or second magnets include one or a combination of materials which includes one or more of: a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, or Yttrium Iron Garnet (YIG), and wherein the Heusler alloy is a material which includes one or more of: Cu, Mn, Al, In, Sn, Ni, Sb, Ga, Co, Fe, Si, Pd, Sb, V, Ru.
11 . An apparatus comprising:
a first differential cell comprising a first magnetoelectric material, a first spin orbit material, and a first magnet, coupled together; and
a second differential cell comprising a second magnetoelectric material, a second spin orbit material, and a second magnet coupled together, wherein the first spin orbit material is coupled to a first terminal of the second magnetoelectric material and a second terminal of the second magnetoelectric material.
12 . The apparatus of claim 11 , wherein the first or second magnets include a paramagnet or a ferromagnet, or wherein the first and second magnets comprises a material which includes one or more of: Pt, Pd, W, Ce, Al, Li, Mg, Na, Cr, O, Co, Dy, Er, Eu, Gd, Fe, Nd, K, Pr, Sm, Tb, Tm, or V.
13 . The apparatus of claim 11 , wherein the first or second magnets include one or a combination of materials which includes one or more of: a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, or Yttrium Iron Garnet (YIG), and wherein the Heusler alloy is a material which includes one or more of: Cu, Mn, Al, In, Sn, Ni, Sb, Ga, Co, Fe, Si, Pd, Sb, V, or Ru.
14 . The apparatus of claim 11 comprises:
a first transistor controllable by a first phase of a clock, wherein the first transistor is coupled to the first spin orbit material; and
a second transistor controllable by a second phase of the clock, wherein the second transistor is coupled to the second material, wherein the first phase and second phase are different and do not overlap.
15 . The apparatus of claim 11 , wherein the first or second magnetoelectric material include one or more of: BiFeO 3 , LuFeO 2 , LuFe 2 O 4 , or La doped BiFeO 3 , or wherein the multiferroic material includes one of: Bi, Fe, O, Lu, or La.
16 . A system comprising:
a memory;
a processor coupled to the memory; and
a wireless interface to allow the processor to communicate with another device, wherein the processor includes:
a first differential cell comprising a first magnetoelectric material, a first spin orbit material, and a first magnet, coupled together; and
a second differential cell comprising a second magnetoelectric material, a second spin orbit material, and a second magnet coupled together, wherein the first spin orbit material is coupled to a first terminal of the second magnetoelectric material and a second terminal of the second magnetoelectric material.
17 . The system of claim 16 , wherein the first or second magnets include a paramagnet or a ferromagnet, or wherein the first and second magnets comprises a material which includes one or more of: Pt, Pd, W, Ce, Al, Li, Mg, Na, Cr, O, Co, Dy, Er, Eu, Gd, Fe, Nd, K, Pr, Sm, Tb, Tm, or V.
18 . The system of claim 16 , wherein the first or second magnets include one or a combination of materials which includes one or more of: a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, or Yttrium Iron Garnet (YIG), and wherein the Heusler alloy is a material which includes one or more of: Cu, Mn, Al, In, Sn, Ni, Sb, Ga, Co, Fe, Si, Pd, Sb, V, or Ru.
19 . The system of claim 16 , wherein the processor comprises:
a first transistor controllable by a first phase of a clock, wherein the first transistor is coupled to the first spin orbit material; and
a second transistor controllable by a second phase of the clock, wherein the second transistor is coupled to the second material, wherein the first phase and second phase are different and do not overlap.
20 . The system of claim 16 , wherein the first or second magnetoelectric material include one or more of: BiFeO 3 , LuFeO 2 , LuFe 2 O 4 , or La doped BiFeO 3 , or wherein the multiferroic material includes one of: Bi, Fe, O, Lu, or La.