Methods and apparatus for prevention of component cracking using stress relief layer

1. A method of protecting a part of a process chamber, comprising:

wet etching a deposition ring of an electrostatic chuck with a weak alkali or acid;

bead blasting a first uppermost surface of the deposition ring to increase adhesion of the first uppermost surface to a subsequently applied stress relief layer, wherein the deposition ring is a ceramic material;

coating at least a portion of the first uppermost surface of the deposition ring with the stress relief layer, wherein the stress relief layer forms a continuous layer, wherein the stress relief layer has a first adhesion threshold with the ceramic material of the deposition ring, wherein the stress relief layer has a second adhesion threshold with aluminum on a second uppermost surface of the stress relief layer, and wherein a ratio of the second adhesion threshold to the first adhesion threshold is at least 5 to 1 to preserve a structural integrity of the deposition ring from a thermal cycling of aluminum deposited on the deposition ring; and

wet cleaning the part with a heated deionized water rinse.

2. The method of claim 1 , wherein the first adhesion threshold is approximately 6 MPa and the second adhesion threshold is approximately 30 MPa.

3. The method of claim 1 , wherein a plasma spray process is used to coat the at least a portion of the surface of the part.

4. The method of claim 1 , wherein a per-hydro-poly-silazane (PHPS) process is used to coat the at least a portion of the surface of the part.

5. The method of claim 1 , wherein the deposition ring is configured to surround the electrostatic chuck in a plasma vapor deposition chamber.

6. The method of claim 1 , wherein the stress relief layer forms a continuous layer that is approximately 100 microns to approximately 150 microns thick.

7. The method of claim 1 , wherein the deposition ring has a kit life of approximately 2500 kWh or more.

8. The method of claim 1 , wherein the thermal cycling is between approximately 200 degrees Celsius and approximately 400 degrees Celsius.

9. The method of claim 1 , wherein the second adhesion threshold is an adhesion threshold of aluminum deposited in a vacuum.

10. The method of claim 1 , wherein the stress relief layer maintains structural integrity of the deposition ring for an aluminum deposition thickness having a ratio of greater than 0.8 compared to a deposition ring thickness.

11. A method of protecting a part of a process chamber, comprising:

coating at least a portion of a first uppermost surface of a deposition ring of a ceramic material with a stress relief layer, wherein the stress relief layer forms a continuous layer, wherein the stress relief layer has a first adhesion threshold with the ceramic material of the deposition ring, wherein the stress relief layer has a second adhesion threshold with aluminum on a second uppermost surface of the stress relief layer, and wherein a ratio of the second adhesion threshold to the first adhesion threshold is at least approximately 5 to 1 to preserve a structural integrity of the deposition ring from a thermal cycling below a plastic deformation temperature of aluminum deposited on the part deposition ring in a vacuum.

12. The method of claim 11 , further comprising:

wet etching the part with a weak alkali or acid prior to coating the part; and

bead blasting the first uppermost surface of the deposition ring to increase adhesion of the first uppermost surface to a subsequently applied stress relief layer, wherein the deposition ring.

13. The method of claim 11 , wherein the first adhesion threshold is approximately 6 MPa and the second adhesion threshold is approximately 30 MPa.

14. The method of claim 11 , wherein a plasma spray process using powdered aluminum oxide is used to coat the at least a portion of the surface of the part.

15. The method of claim 11 , wherein the deposition ring is configured to surround the electrostatic chuck in a plasma vapor deposition chamber.

16. The method of claim 11 , wherein the stress relief layer forms a continuous layer that is approximately 100 microns to approximately 150 microns thick.

17. The method of claim 11 , wherein the deposition ring is configured to surround an electrostatic chuck.

18. The method of claim 11 , wherein the stress relief layer maintains structural integrity of the deposition ring for an aluminum deposition thickness having a ratio of greater than 0.8 compared to a deposition ring thickness.

19. An apparatus for installation into a process chamber, comprising:

a deposition ring of a ceramic material with at least a portion of a first uppermost surface having a stress relief layer, wherein the stress relief layer forms a continuous layer, wherein the stress relief layer has a first adhesion threshold with the ceramic material of the deposition ring, wherein the stress relief layer has a second adhesion threshold with aluminum deposited in a vacuum on a second uppermost surface of the stress relief layer, and wherein a ratio of the second adhesion threshold to the first adhesion threshold is at least 5 to 1 to preserve a structural integrity of the deposition ring from a thermal cycling of aluminum deposited on the deposition ring at temperatures of less than a plastic deformation temperature of aluminum.

20. The apparatus of claim 19 , wherein the first adhesion threshold is approximately 6 MPa and the second adhesion threshold is approximately 30 MPa.