Intermodulation distortion mitigation using electronic variable capacitor
A matching network for a system having a non-linear load and powered by a first RF power supply operating at a first frequency and a second RF power supply operating at a second frequency. The matching network includes a first matching network section for providing an impedance match between the first power supply and the load. The matching network also includes a second matching network section for providing an impedance match between the second power supply and the load. A the first matching network section includes a first variable reactance, and the variable reactance is controlled in accordance with IMD sensed in the signal applied to the load by the first RF power supply. The variable reactance is adjusted in accordance with the IMD to reduce the detected IMD.
1. A matching network comprising:
a first reactance section configured to provide a first reactance to control an impedance between a first RF power source generating a first RF signal operating at a first frequency and a load; and
a second variable reactance section configured to adjust a second reactance to control impedance in response to intermodulation distortion (IMD) from interaction between the first RF signal and a second RF signal on the impedance.
2. The matching network of claim 1 further comprising a capacitance controller comprising:
a playback module configured to respond to a trigger signal, the trigger signal varying in accordance with the IMD, the playback module further configured to control the second variable reactance section in response to the trigger signal; and
a reactance adjustment module configured to determine an adjustment to the second variable reactance section.
3. The matching network of claim 1 wherein the IMD varies in accordance with a position of a plasma sheath relative to an electrode of the load, and the impedance varies in accordance with the IMD.
4. The matching network of claim 1 wherein the second reactance includes at least one of a capacitance or an inductance and the at least one of the capacitance or the inductance is varied in accordance with controlling at least one of a diode or a varactor.
5. The matching network of claim 4 wherein the at least one of the diode or the varactor is controlled in accordance with a bias voltage applied to a terminal of the at least one of the diode or the varactor.
6. The matching network of claim 5 wherein the second variable reactance section includes a controller configured to output a control signal, the control signal varying the bias voltage of the at least one of the diode or the varactor.
7. The matching network of claim 5 wherein the second variable reactance section includes a controller configured to output a control signal that varies the bias voltage applied to the at least one of a diode or a varactor.
8. The matching network of claim 1 further comprising:
a third reactance section configured to provide a third reactance to control impedance between the a second RF power source generating the second RF signal at a second frequency and the load.
9. The matching network of claim 8 wherein the first frequency is greater than the second frequency and the second variable reactance section is configured to electrically communicate with the first reactance section.
10. The matching network of claim 9 wherein the third reactance section further comprises a third variable reactance configured to control the impedance between the second RF power source and the load.
11. The matching network of claim 10 wherein the first frequency is greater than the second frequency and the second variable reactance section is configured to electrically communicate with the first reactance section.
12. The matching network of claim 1 wherein the first reactance section further comprises a first variable reactance configured to control the impedance between the first RF power source and the load.
13. A radio frequency (RF) power supply system comprising:
a RF power source; and
matching network between the RF power source a load, inducing:
a first reactance section configured to provide a first reactance to control an impedance between a first RF power source generating a first RF signal operating at a first frequency and the load, wherein the first reactance is one of fixed or variable; and
a second variable reactance section configured to adjust a second reactance to introduce a reactance offset to control impedance in response to intermodulation distortion (IMD) from interaction between the first RF signal and a second RF signal operating at a second frequency on the impedance; and
a controller configured to communicate with the second variable reactance section and configured to generate a control signal to adjust the second reactance in response to a trigger signal to control the impedance,
wherein the reactance offset varies in accordance with the second RF signal.
14. The RF power supply system of claim 13 , wherein the first RF signal is a source RF signal applied to the load and the second RF signal is a bias RF signal applied to the load, and the load is a plasma chamber.
15. The RF power supply system of claim 13 , wherein the reactance offset varies in accordance with a timing that varies in accordance with the trigger signal, wherein the trigger signal indicates a position of the second RF signal relative to the first RF signal.
16. The RF power supply system of claim 13 , wherein the controller is configured to retrieve the reactance offset from memory or to calculate the reactance offset.
17. The RF power supply system of claim 13 , wherein the reactance offset includes a plurality of reactances output in a predetermined order and timing in accordance with the trigger signal.
18. The RF power supply system of claim 13 , wherein the controller is configured to update the reactance offset in accordance with the second RF signal.
19. The RF power supply system of claim 13 , wherein the reactance offset varies in accordance with an intermodulation distortion caused by the second RF signal.
20. The RF power supply system of claim 13 , wherein the first frequency is greater than the second frequency.
21. The RF power supply system of claim 13 , wherein the controller further comprises a playback module, the playback module configured to detect the trigger signal, the playback module configured to initiate introduction of the reactance offset to RF output.
22. The RF power supply system of claim 21 , wherein the controller further comprises a lookup table, the lookup table configured to store the reactance offset introduced by the playback module.
23. The RF power supply system of claim 22 , wherein the controller further comprises an update module, the update module configured to update the reactance offset in accordance with an electrical characteristic of the first RF signal.