Interconnect structure having an etch stop layer over conductive lines
A multilayer interconnect structure for integrated circuits includes a first dielectric layer over a substrate and a conductive line partially exposed over the first dielectric layer. The structure further includes an etch stop layer over both the first dielectric layer and the exposed conductive line, and a second dielectric layer over the etch stop layer. The second dielectric layer and the etch stop layer provide a via hole that partially exposes the conductive line. The structure further includes a via disposed in the via hole, and another conductive line disposed over the via and coupled to the conductive line through the via. Methods of forming the multilayer interconnect structure are also disclosed. The etch stop layer reduces the lateral and vertical etching of the first and second dielectric layers when the via hole is misaligned due to overlay errors.
1. A device, comprising:
a first dielectric layer disposed over a substrate;
a first conductive feature disposed in the first dielectric layer;
a second dielectric layer disposed along a sidewall of the first conductive feature;
a third dielectric layer disposed over the second dielectric layer; and
a conductive via extending through the third dielectric layer and the second dielectric layer and coupled to the first conductive feature, and
wherein the conductive via includes a bottom surface that extends between the first conductive feature and a side surface of the conductive via,
wherein the second dielectric layer extends from the bottom surface of the of the conductive via and along the side surface of the conductive via to a first height above the substrate,
wherein the first conductive feature extends to a second height above the substrate that is less than the first height, and
wherein the third dielectric layer interfaces with a portion of the second dielectric layer at a third height above the substrate, the third height being less than the first height.
2. The device of claim 1 , further comprising a second conductive feature disposed in the first dielectric layer and spaced apart from the first conductive feature, wherein the second dielectric layer extends between the first and second conductive features.
3. The device of claim 1 , wherein the conductive via interfaces with a top surface and a side surface of the first conductive feature.
4. The device of claim 1 , wherein the first dielectric layer and the second dielectric layer are formed of different materials.
5. The device of claim 1 , wherein the second dielectric layer includes silicon nitride.
6. The device of claim 1 , wherein the second dielectric layer includes a material selected from the group consisting of silicon, oxygen, nitrogen and aluminum.
7. The device of claim 1 , wherein the third dielectric layer interfaces with a top surface of the second dielectric layer positioned at the first height above the substrate.
8. A method comprising:
forming a first conductive feature over a substrate;
forming a first material layer on the first conductive feature;
forming a first dielectric layer over the first material layer;
forming an opening within the first dielectric layer over the first conductive feature;
forming a second material layer within the opening;
forming a trench that extends through the second material layer to expose the first conductive feature; and
forming a conductive via in the trench.
9. The method of claim 8 , wherein the forming of the first dielectric layer over the first material layer includes conformally forming the first dielectric layer directly on the first conductive feature.
10. The method of claim 9 , further comprising forming a second conductive feature over the substrate, and
wherein the forming of the first dielectric layer over the first material layer includes conformally forming the first dielectric layer directly on the second conductive feature.
11. The method of claim 8 , further comprising:
forming a second dielectric layer over the substrate, the first conductive feature disposed within the second dielectric layer; and
removing a portion of the second dielectric layer to expose a portion of the first conductive feature, and
wherein the forming of the first material layer on the first conductive feature includes forming the first material layer directly on the exposed portion of the first conductive feature.
12. The method of claim 8 , wherein the first material layer includes a material selected from the group consisting of silicon, oxygen, nitrogen and aluminum.
13. The method of claim 8 , wherein the forming of the conductive via in the trench includes forming the conductive via over a top surface of the first conductive feature and along a sidewall surface of the first conductive feature.
14. The method of claim 13 , wherein the forming of the trench that extends through the second material layer to expose the first conductive feature further exposes a portion of the first material layer.
15. The method of claim 14 , wherein the forming of the conductive via in the trench includes forming the conductive via directly on the exposed first conductive feature and the exposed portion of the first material layer.
16. A method comprising:
forming a first conductive line and a second conductive line over a substrate;
forming a first material layer directly on the first and second conductive lines;
forming a first dielectric layer over the first material layer;
forming an opening within the first dielectric layer over the first conductive line while the first material layer covers the second conductive line, wherein the opening is defined by opposing sidewalls of the first dielectric layer;
forming a second dielectric material layer within the opening directly on the opposing sidewalls of the first dielectric layer;
forming a trench through the second dielectric material layer to a top surface of the first conductive line; and
forming a conductive via in the trench.
17. The method of claim 16 , wherein the first material layer covers the second conductive line during the forming of the conductive via in the trench.
18. The method of claim 16 , wherein the first material layer includes a material selected from the group consisting of silicon, oxygen, nitrogen and aluminum.
19. The method of claim 16 , wherein the forming of the trench through the second dielectric material layer to the top surface of the first conductive line further includes forming the trench along a sidewall surface of the first conductive line such that the sidewall surface of the first conductive line is exposed within the trench, and
wherein a bottommost surface of the trench is defined by the first material layer.
20. The method of claim 16 , wherein the forming of the first material layer directly on the first and second conductive lines further includes forming the first material layer directly on the substrate.