Ceramic pedestal having atomic protective layer

1. A method of manufacturing a support pedestal for use in semiconductor processing, the support pedestal comprising a support plate bonded to a tubular shaft, the support plate comprising a substrate, an electric element embedded in the substrate, and a conductive member connected to the electric element, and the tubular shaft defining an internal chamber, the method comprising:

applying a protective layer on the conductive member by an atomic layer deposition (ALD) process.

2. The method according to claim 1 , wherein the ALD process comprises:

introducing first precursors into the chamber of the tubular shaft to form a first monolayer on the conductive member; and

introducing second precursors into the chamber of the tubular shaft to form a second monolayer on the first monolayer.

3. The method according to claim 2 , wherein the ALD process further comprises introducing a purge gas into the chamber of the tubular shaft before the second precursors are introduced into the chamber.

4. The method according to claim 1 further comprising heating the chamber of the tubular shaft during the ALD process.

5. The method according to claim 4 further comprising connecting a plasma chamber to the tubular shaft for heating the chamber of the tubular shaft.

6. The method according to claim 4 further comprising enclosing the support pedestal with a heated chamber for heating the chamber of the tubular shaft.

7. The method according to claim 1 , wherein the electric element is selected from a group consisting of a resistive heating element, a temperature sensor, an RF antenna, and an electrode for an electrostatic chuck.

8. The method according to claim 7 , wherein the electric element is the resistive heating element.

9. The method according to claim 8 further comprising activating the resistive heating element for heating the chamber of the tubular shaft.

10. The method according to claim 1 , wherein the protective layer is an Al 2 O 3 layer.

11. The method according to claim 1 , wherein the protective layer is in a compressive state.

12. The method according to claim 1 , wherein the conductive member is selected from a group consisting of contact pins and heater termination areas.

13. The method according to claim 1 , wherein the protective layer is applied on the conductive member in situ.

14. A method of manufacturing a support pedestal for use in semiconductor processing, the support pedestal comprising a support plate bonded to a tubular shaft, the support plate comprising a substrate, an electric element embedded in the substrate, and a conductive member connected to the electric element, and the tubular shaft defining an internal chamber, the method comprising:

applying a protective layer on the conductive member by an atomic layer deposition (ALD) process, the ALD process comprising:

introducing first precursors into the chamber of the tubular shaft to form a first monolayer on the conductive member;

introducing a purge gas into the chamber of the tubular shaft; and

introducing second precursors into the chamber of the tubular shaft to form a second monolayer on the first monolayer.

15. The method according to claim 14 further comprising heating the chamber of the tubular shaft during the ALD process.

16. The method according to claim 15 further comprising connecting a plasma chamber to the tubular shaft for heating the chamber of the tubular shaft.

17. The method according to claim 15 further comprising enclosing the support pedestal with a heated chamber for heating the chamber of the tubular shaft.

18. The method according to claim 15 further comprising activating the electric element for heating the chamber of the tubular shaft, wherein the electric element is a resistive heating element.

19. The method according to claim 14 , wherein the protective layer is an Al 2 O 3 layer.

20. The method according to claim 14 , wherein the protective layer is in a compressive state.