Laser irradiation apparatus and method for manufacturing semiconductor device

1. A laser irradiation apparatus comprising:

an optical-system module configured to apply laser light to an object to be irradiated;

a first shield plate in which a first slit is formed, through which the laser light passes; and

a reflected-light receiving component disposed between the optical-system module and the first shield plate,

wherein the reflected-light receiving component is positioned so as to receive, out of the laser light, first reflected light reflected by the first shield plate, and

wherein the first shield plate is bent toward the optical-system module.

2. The laser irradiation apparatus according to claim 1 , further comprising:

a second shield plate in which a second slit is formed, through which the laser light that has passed through the first slit passes,

wherein the reflected-light receiving component is further configured to receive, out of the laser light, second reflected light reflected by the second shield plate.

3. The laser irradiation apparatus according to claim 1 ,

wherein the reflected-light receiving component receives third reflected light, the third reflected light being light that is generated as the laser light that has been applied to the object to be irradiated is reflected by the object to be irradiated, and

wherein an incident angle of the first reflected light differs from an incident angle of the third reflected light in a part of the reflected-light receiving component where the first and third reflected lights are received.

4. The laser irradiation apparatus according to claim 1 , wherein the reflected-light receiving component comprises a cooling jacket comprising a coolant channel through which a coolant flows.

5. The laser irradiation apparatus according to claim 1 , wherein the reflected-light receiving component comprises a heat-insulating air layer disposed on an optical-system module side, the heat-insulating air layer containing air.

6. The laser irradiation apparatus according to claim 1 , wherein the reflected-light receiving component comprises a heat absorbing element disposed on a first shield plate side, the heat absorbing element being adapted to absorb heat.

7. The laser irradiation apparatus according to claim 6 , wherein a multi-layer heat absorbing film is formed over a surface on the first shield plate side of the heat absorbing element, the multi-layer heat absorbing film comprising a plurality of heat absorbing films adapted to absorb heat.

8. The laser irradiation apparatus according to claim 7 , wherein the multi-layer heat absorbing film has a predetermined tolerance for an incident angle of the first reflected light.

9. The laser irradiation apparatus according to claim 6 , wherein a frosting process has been performed over a surface on the first shield plate side of the heat absorbing element.

10. The laser irradiation apparatus according to claim 7 , wherein a multi-layer heat absorbing film is formed over a surface on an optical-system module side of the heat absorbing element, the multi-layer heat absorbing film comprising a plurality of heat absorbing films adapted to absorb heat.

11. The laser irradiation apparatus according to claim 10 , wherein an absorption ratio of the multi-layer heat absorbing film formed over the surface on the first shield plate side of the heat absorbing element and comprising the plurality of heat absorbing films adapted to absorb heat is lower than that of the multi-layer heat absorbing film formed over the surface of the optical-system module side of the heat absorbing element.

12. The laser irradiation apparatus according to claim 1 , wherein a reflecting mirror is provided over a surface of an optical-system module side of the first shield plate.

13. The laser irradiation apparatus according to claim 12 , wherein a reflecting film applied to the reflecting mirror has a predetermined tolerance for an incident angle of the laser light.

14. The laser irradiation apparatus according to claim 1 , wherein

the first shield plate comprises a horizontal part and a part inclined from the horizontal part toward the optical-system module, and

the first reflected light includes reflected light, the reflected light being light that is generated as the laser light that has been applied to the first shield plate is reflected by the inclined part.

15. A method for manufacturing a semiconductor device comprising:

(A) emitting laser light from an optical-system module toward a substrate on which a film including a semiconductor is formed;

(B) providing a first shield plate in which a first slit is formed, through which the laser light passes, and making, out of the laser light applied to the first slit and the first shield plate, part of the laser light applied to the first slit pass through the first slit;

(C) blocking, out of the laser light applied to the first slit and the first shield plate, part of the laser light applied to the first shield plate by the first shield plate;

(D) disposing a reflected-light receiving component between the optical-system module and the first shield plate such that the reflected-light receiving component receives a first reflected light, the first reflected light being light that is generated as the laser light is applied to the first shield plate and reflected by the first shield plate; and

(E) irradiating the substrate with, out of the laser light applied to the first slit and the first shield plate, the laser light that has passed through the first slit,

wherein the first shield plate is bent toward the optical-system module.

16. The method for manufacturing a semiconductor device according to claim 15 , further comprising:

(F) providing a second shield plate in which a second slit is formed, through which the laser light that has passed the first slit passes, and such that, out of the laser light applied to the second slit and the second shield plate, part of the laser light applied to the second slit passes through the second slit;

(G) blocking, out of the laser light applied to the second slit and the second shield plate, part of the laser light applied to the second shield plate by the second shield plate; and

(H) configuring the reflected-light receiving component so as to receive second reflected light, the second reflected light being light that is generated as the laser light that has been applied to the second shield plate is reflected by the second shield plate.

17. The method for manufacturing a semiconductor device according to claim 15 , further comprising a step of making the reflected-light receiving component receive third reflected light, the third reflected light being light that is generated as the laser light that has been applied to the substrate is reflected by the substrate.