Techniques to combine two integrated photonic substrates
Structures and methods for passively aligning a photonic die with a receiving substrate are described. Three alignment surfaces, having dimensions greater than a desired alignment accuracy, may be formed on the photonic die and used to passively and accurately align the photonic die to a receiving substrate in six degrees of freedom. Two of the three alignment surfaces on the photonic die may be formed in a single mask-and-etch process, while the third alignment surface may require no patterning or etching. Three complementary alignment surfaces on the receiving substrate may be formed in a single mask-and-etch process.
1. An array of repeated groups of photonic structures formed on a wafer, each group comprising:
a mesa;
a first optical waveguide formed on the mesa; and
three alignment surfaces formed at three locations with respect to the first optical waveguide, wherein the three alignment surfaces provide sub-micron passive alignment of the first optical waveguide in at least three degrees of freedom to a second optical waveguide on a receiving substrate.
2. The array of repeated photonic structures of claim 1 , each repeated photonic structure further comprising an optical element formed on the wafer near an exit end of the first optical waveguide and arranged to redirect light from the first waveguide out of a plane of the wafer.
3. The array of repeated photonic structures of claim 2 , wherein the optical element is positioned on the wafer a distance from the mesa in a location that is separated from the mesa when forming a photonic die that includes the mesa and the first optical waveguide.
4. An array of photonic structures formed on a wafer, comprising:
the wafer, wherein the wafer has a surface;
a plurality of mesas formed on the surface of the wafer, a first mesa of the plurality of mesas being substantially wedge-shaped and comprising:
a first optical waveguide;
two or more alignment surfaces angled out-of-plane from the surface of the wafer and non-parallel with respect to each other;
a first end surface angled out-of-plane from the surface of the wafer, wherein the first optical waveguide has an end positioned at the first end surface;
a second end surface angled out-of-plane from the surface of the wafer, wherein the first end surface has a shorter length than the second end surface, and wherein at least two of the alignment surfaces terminate at the first and/or second end surfaces;
an upper surface out-of-plane from the surface of the wafer and contacting each of the two or more alignment surfaces and the first and second end surfaces;
an electrode disposed on the upper surface;
wherein the two or more alignment surfaces provide sub-micron passive alignment of the first optical waveguide in at least three degrees of freedom to a second optical waveguide on a receiving substrate.
5. The array of photonic structures of claim 4 , wherein the first optical waveguide is disposed in the mesa between the upper surface and the surface of the wafer.
6. The array of photonic structures of claim 4 , further comprising a reflective coating at the second end surface.
7. The array of photonic structures of claim 6 , further comprising an anti-reflective coating at the first end surface.
8. The array of photonic structures of claim 4 , further comprising an anti-reflective coating at the first end surface.
9. The array of photonic structures of claim 4 , wherein the plurality of mesas further comprises a second mesa, and wherein the array of photonic structures further comprises a scattering structure disposed between the first mesa and the second mesa.
10. The array of photonic structures of claim 9 , wherein the scattering structure is a grating coupler.
11. The array of photonic structure of claim 10 , wherein the electrode is a first electrode, and wherein the first mesa comprises a plurality of electrodes disposed on the upper surface, the plurality of electrodes being substantially parallel to each other.
12. A photonic wafer, comprising:
the wafer having a surface;
a plurality of mesas formed on the surface of the wafer, a first mesa of the plurality of mesas comprising:
a first optical waveguide;
two or more alignment surfaces angled out-of-plane from the surface of the wafer and non-parallel with respect to each other;
a first end surface angled out-of-plane from the surface of the wafer, wherein the first optical waveguide has an end positioned at the first end surface;
a second end surface angled out-of-plane from the surface of the wafer, wherein the two or more alignment surfaces each terminate at the first and/or second end surfaces;
an upper surface out-of-plane from the surface of the wafer and contacting each of the two or more alignment surfaces and the first and second end surfaces;
an electrode disposed on the upper surface;
wherein the two or more alignment surfaces provide sub-micron passive alignment of the first optical waveguide in at least three degrees of freedom to a second optical waveguide on a receiving substrate.
13. The photonic wafer of claim 12 , wherein the first optical waveguide is disposed in the mesa between the upper surface and the surface of the wafer.
14. The photonic wafer of claim 12 , further comprising a reflective coating at the second end surface.
15. The photonic wafer of claim 14 , further comprising an anti-reflective coating at the first end surface.
16. The photonic wafer of claim 12 , further comprising an anti-reflective coating at the first end surface.
17. The photonic wafer of claim 12 further comprising an array of photonic structures, the plurality of mesas further comprises a second mesa, and wherein the array of photonic structures further comprises a scattering structure disposed on the wafer between the first and second mesas.
18. The photonic wafer of claim 17 , wherein the scattering structure is a grating coupler.
19. The photonic wafer of claim 18 , wherein the electrode is a first electrode, and wherein the first mesa comprises a plurality of substantially parallel electrodes disposed on the upper surface.
20. The photonic wafer of claim 19 , wherein the first mesa comprises an equal number of optical waveguides and electrodes.