Area-selective atomic layer deposition of passivation layers
Methods of enhancing selective deposition are described. In some embodiments, a passivation layer is deposited on a metal surface before deposition of a dielectric material. A block I molecule is deposited on a metal surface, and a block II molecule is reacted with the block I molecule to form a passivation layer.
1. A method of selectively depositing a film on a substrate surface including a metal surface and a dielectric surface, the method comprising:
depositing a block I molecule on the metal surface, the block I molecule comprising one or more of an alkyne and an alkene; and
reacting the block I molecule with a block II molecule using a catalyst to form a passivation layer on the metal surface, the block II molecule comprising one or more of an azide and a thiol.
2. The method of claim 1 , wherein the alkyne and the alkene independently comprise a headgroup selected from the group consisting of a pyrrole group, an amine group, an acetylacetone group, an alkyl hydrazide group, a cyclic hydrazide group, a phosphonate group, a heterocyclic group, a phosphonic acid group, a phosphonic ester group, a pyrrolidine group, a pyrazole group, an imidazole group, a furan group, a biimidazole group, a thiophene group, a thiazole group, a thiadiazole group, a pyridine group, a pyridazine group, a pyrimidine group, a quinoxaline group, an indazole group, a thiazine group, a phosphinine group, a phosphinoline group, and a phosphole group, the headgroup attached to a hydrocarbon chain n lengths long.
3. The method of claim 2 , wherein the azide and the thiol independently comprise a tail group selected from the group consisting of an alicyclic hydrocarbon chain, a branched hydrocarbon chain, a polyaryl hydrocarbon chain, and a polyester chain, the tail group attached to a hydrocarbon chain m lengths long, wherein m is an integer.
4. The method of claim 3 , wherein m is an integer from 2 to 50.
5. The method of claim 2 , wherein n is an integer from 2 to 50.
6. The method of claim 1 , wherein depositing the film includes a vapor phase or solvent phase reaction.
7. The method of claim 1 , wherein depositing the film includes a vapor phase reaction.
8. The method of claim 1 , wherein the block I molecule and the block II molecule are thermally reacted at a temperature in a range of from 10° C. to 200° C.
9. The method of claim 1 , wherein the block II molecule is selected from one or more of
10. The method of claim 9 , further comprising reacting with a difunctional Block III molecule selected from one or more of
11. The method of claim 1 , wherein reacting comprises photo-initiating a reaction between the block I molecule and the block II molecule.
12. The method of claim 1 , wherein the catalyst is selected from the group consisting of a copper catalyst, a cobalt catalyst, a ruthenium catalyst, and a tungsten catalyst.
13. The method of claim 1 , wherein the method is performed in a substrate processing chamber.
14. The method of claim 1 , further comprising depositing a dielectric film on the dielectric surface.
15. A method of selectively depositing a film on a substrate surface including a metal surface and a dielectric surface, the method comprising:
forming a passivation layer on the metal surface by reacting one or more of an alkyne and an alkene with one or more of a thiol and an azide, the alkyne and the alkene independently comprising a headgroup selected from the group consisting of a pyrrole group, an amine group, an acetylacetone group, an alkyl hydrazide group, a cyclic hydrazide group, a phosphonate group, a heterocyclic group, a phosphonic acid group, a phosphonic ester group, a pyrrolidine group, a pyrazole group, an imidazole group, a furan group, a biimidazole group, a thiophene group, a thiazole group, a thiadiazole group, a pyridine group, a pyridazine group, a pyrimidine group, a quinoxaline group, an indazole group, a thiazine group, a phosphinine group, a phosphinoline group, and a phosphole group, the headgroup attached to a hydrocarbon chain n lengths long, the azide and the thiol independently comprising a tail group selected from the group consisting of an alicyclic hydrocarbon chain, a branched hydrocarbon chain, a polyaryl hydrocarbon chain, and a polyester chain, the tail group attached to hydrocarbon chain m lengths long; and
depositing a dielectric layer on the dielectric surface.
16. The method of claim 15 , wherein forming the passivation layer comprises a thermal reaction at a temperature in a range of from 10° C. to 200° C.
17. The method of claim 15 , wherein forming the passivation layer comprises photo-initiating a reaction between one or more of an alkyne and an alkene with one or more of a thiol and an azide.
18. The method of claim 15 , wherein reacting the azide and the alkyne comprises using a catalyst, the catalyst is selected from the group consisting of a copper, a cobalt, a ruthenium, and a tungsten catalyst.
19. A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing chamber, cause the processing chamber to perform operations of:
deposit a block I molecule on a metal surface, the block I molecule comprising one or more of an alkyne and an alkene; and
using a catalyst to react the block I molecule with a block II molecule to form a passivation layer on the metal surface, the block II molecule comprising one or more of an azide and a thiol.
20. A method of selectively depositing a film on a substrate surface including a metal surface and a dielectric surface, the method comprising:
depositing a block I molecule on the metal surface, the block I molecule comprising one or more of an alkyne and an alkene; and
reacting the block I molecule with a block II molecule to form a passivation layer on the metal surface, the block II molecule comprising one or more of an azide and a thiol, wherein the block I molecule and the block II molecule are thermally reacted at a temperature in a range of from 10° C. to 200° C.
21. A method of selectively depositing a film on a substrate surface including a metal surface and a dielectric surface, the method comprising:
depositing a block I molecule on the metal surface, the block I molecule comprising one or more of an alkyne and an alkene; and
reacting the block I molecule with a block II molecule to form a passivation layer on the metal surface, the block II molecule comprising one or more of an azide and a thiol, wherein the azide and the thiol independently comprise a tail group selected from the group consisting of an alicyclic hydrocarbon chain, a branched hydrocarbon chain, a polyaryl hydrocarbon chain, and a polyester chain, the tail group attached to a hydrocarbon chain m lengths long, wherein m is an integer.