Symmetric transversely-excited film bulk acoustic resonators with reduced spurious modes
Acoustic resonators and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate. A back surface of the piezoelectric plate is attached to the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern including an interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate, interleaved fingers of the IDT disposed on the diaphragm. A front-side dielectric layer is formed on the front surface of the piezoelectric plate between, but not over, the IDT fingers. A back-side dielectric layer is formed on a back surface of the diaphragm. Thicknesses of the IDT fingers and the front-side dielectric layer are substantially equal. An acoustic impedance Zm of the IDT fingers and an acoustic impedance Zfd of the front-side dielectric layer satisfy the relationship 0.8Zm≤Zfd≤1.25Zm.
1. An acoustic resonator device comprising:
a substrate having a surface;
a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate;
a conductor pattern formed on the front surface of the piezoelectric plate, the conductor pattern including an interdigital transducer (IDT), interleaved IDT fingers of the IDT disposed on the diaphragm,
a front-side dielectric layer formed on the front surface of the piezoelectric plate between, but not on top of, the IDT fingers; and
a back-side dielectric layer formed on a back surface of the diaphragm, wherein
a thickness of the IDT fingers and a thickness of the front-side dielectric layer are substantially equal, and
an acoustic impedance Zm of the IDT fingers and an acoustic impedance Zfd of the front-side dielectric layer satisfy the relationship 0.8 Zm≤Zfd≤1.25 Zm.
2. The device of claim 1 , wherein
the IDT fingers are substantially aluminum and the front-side dielectric layer is silicon dioxide.
3. The device of claim 1 , wherein
the IDT fingers are substantially copper and the front-side dielectric layer is Ta 2 O 5 .
4. The device of claim 1 , wherein
the piezoelectric plate is lithium niobate with Euler angels of [0°, β, 0°], where 28°≤β≤32°].
5. The device of claim 4 , wherein
β is substantially equal to 30°.
6. The device of claim 4 , wherein a mark to pitch ratio of the IDT fingers is within a range from 0.24 to 0.28.
7. The device of claim 1 , wherein
an acoustic thickness of the back-side dielectric layer is at least one-third and not more than two-thirds of a total acoustic thickness of the front-side and back-side dielectric layers.
8. The device of claim 1 , wherein
the front-side dielectric layer and the back side dielectric layer are the same material, and
a thickness tfd of the front-side dielectric layer and a thickness tbd of the back-side dielectric layer satisfy the relationship 0.5 tfd≤tbd≤1.5 tfd.
9. The device of claim 1 wherein
the IDT fingers are substantially aluminum,
the front-side dielectric layer and the back-side dielectric layer are silicon dioxide, and
a thickness of the IDT fingers, a thickness of the front-side dielectric layer, and a thickness of the back-side dielectric layer are substantially equal.
10. The device of claim 1 , further comprising:
a frequency setting dielectric layer formed over the IDT fingers and the front-side dielectric layer.
11. The device of claim 1 , wherein the back-side dielectric layer covers the back surface of the piezoelectric plate, portions of the back-side dielectric layer sandwiched between the piezoelectric plate and the substrate.
12. The device of claim 1 , wherein the diaphragm is contiguous with the piezoelectric plate around at least 50% of a perimeter of the cavity.
13. The device of claim 1 , wherein
the piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic wave within the diaphragm.
14. An acoustic filter device comprising:
a substrate having a surface;
a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for portions of the piezoelectric plate forming a plurality of diaphragms spanning respective cavities in the substrate;
a conductor pattern formed on the front surface of the piezoelectric plate, the conductor pattern including interdigital transducers (IDTs) of a plurality of acoustic resonators, interleaved IDT fingers of each IDT disposed on a respective diaphragm from the plurality of diaphragms;
a front-side dielectric layer formed on the front surface of the piezoelectric plate between, but not on top of, the IDT fingers; and
a back-side dielectric layer formed on back surfaces of the plurality of diaphragms, wherein
a thickness of the IDT fingers and a thickness of the front-side dielectric layer are substantially equal, and
an acoustic impedance Zm of the IDT fingers and an acoustic impedance Zfd of the front-side dielectric layer satisfy the relationship 0.8 Zm≤Zfd≤1.25 Zm.
15. The filter device of claim 14 , wherein
the IDT fingers are substantially aluminum and the front-side dielectric layer is silicon dioxide.
16. The filter device of claim 14 , wherein
the IDT fingers are substantially copper and the front-side dielectric layer is Ta 2 O 5 .
17. The filter device of claim 14 , wherein
the piezoelectric plate is lithium niobate with Euler angels of [0°, β, 0°], where 28°≤β≤32°].
18. The filter device of claim 17 , wherein
β is substantially equal to 30°.
19. The filter device of claim 17 , wherein mark to pitch ratios of the IDT fingers of all of the plurality of acoustic resonators are within a range from 0.24 to 0.28.
20. The filter device of claim 14 , wherein
an acoustic thickness of the back-side dielectric layer is at least one-third and not more than two-thirds of a total acoustic thickness of the front-side and back-side dielectric layers.
21. The filter device of claim 20 , wherein
the front-side dielectric layer and the back side dielectric layer are the same material, and
a thickness tfd of the front-side dielectric layer and a thickness tbd of the back-side dielectric layer satisfy the relationship 0.5 tfd≤tbd≤1.5 tfd.
22. The filter device of claim 14 wherein
the interleaved IDT fingers are aluminum,
the front-side dielectric layer and the back-side dielectric layer are silicon dioxide, and
a thickness of the IDT fingers, a thickness of the front-side dielectric layer, and a thickness of the back-side dielectric layer are substantially equal.
23. The filter device of claim 14 , further comprising:
a frequency setting dielectric layer formed over the IDT fingers and the front-side dielectric layer of at least some of the plurality of acoustic resonators.
24. The filter device of claim 14 , wherein the back-side dielectric layer covers the back surface of the piezoelectric plate, portions of the back-side dielectric layer sandwiched between the piezoelectric plate and the substrate.