Metal cavity for transversely-excited film bulk acoustic resonator (XBAR)
A process for fabricating a transversely-excited film bulk acoustic resonator (XBAR) having a metal cavity, and the fabricated XBAR include forming a conductor pattern including interleaved interdigital transducer (IDT) fingers on a piezoelectric wafer. Thein forming a metal layer on a substrate, the metal layer having a cavity. Then, bonding the piezoelectric plate to the metal layer using a metal-to-metal bond such that the IDT fingers are disposed over the cavity. Then, thinning the piezoelectric wafer to form a piezoelectric plate having a portion of the piezoelectric plate forming a diaphragm that spans the cavity.
1 . A method of fabricating an acoustic resonator device having a metal cavity, the method comprising:
forming a first metal layer on a substrate;
forming a first cavity in the first metal layer;
forming a second metal layer on a piezoelectric plate having a conductor pattern including interleaved interdigital transducer (IDT) fingers;
forming a second cavity in the second metal layer;
bonding the first metal layer to the second metal layer using a metal-to-metal bond such that the first cavity is vertically aligned with the second cavity and such that the interleaved IDT fingers are disposed over the first cavity and the second cavity.
2 . The method of claim 1 , further comprising:
after bonding, thinning a piezoelectric wafer to form the piezoelectric plate, such that a portion of the piezoelectric plate forms a diaphragm that spans the first cavity.
3 . The method of claim 1 , further comprising:
prior to forming the first metal layer, forming the IDT on a back surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm, the piezoelectric plate and the IDT configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode within the diaphragm.
4 . The method of claim 1 , further comprising:
forming a dielectric layer over the interleaved IDT fingers and the back surface of the portion of the piezoelectric plate that spans the first cavity.
5 . An acoustic resonator comprising:
a plurality of series resonators comprising:
a first piezoelectric layer that includes a portion that is over a cavity in a metal layer over a substrate;
a first interdigital transducer on a surface of the first piezoelectric layer, the first interdigital transducer including interleaved fingers on the portion of the first piezoelectric layer that is over the cavity in the metal layer; and
a metal-to-metal bond configured to bond the first piezoelectric layer to the metal layer such that the interleaved fingers of the first IDT are disposed over the cavity; and
a plurality of shunt resonators comprising:
a second piezoelectric layer that includes a portion that is over a cavity in a metal layer over a substrate, the second piezoelectric layer being different than the first piezoelectric layer;
a second interdigital transducer on a surface of the second piezoelectric layer, the second interdigital transducer including interleaved fingers on the portion of the second piezoelectric layer that is over the cavity in the metal layer; and
a metal-to-metal bond configured to bond the second piezoelectric layer to the metal layer such that the interleaved fingers of the second IDT are disposed over the cavity,
wherein the plurality of series resonators and the plurality of shunt resonators configure a band-pass filter.
6 . The device of claim 5 , further comprising a dielectric layer over the interleaved fingers of at least the first IDT and a surface of the portion of the first piezoelectric layer that is over the cavity in the metal layer.
7 . The device of claim 5 , wherein the first interdigital transducer and the interleaved fingers are on the surface of the first piezoelectric layer that faces the metal layer, such that the interleaved fingers are within the cavity.
8 . The device of claim 5 , further comprising:
a plurality of openings that extend through the piezoelectric layer; and
conductor material in the plurality of openings and configured as contact vias or pads for the interdigital transducer of the first IDT.
9 . An acoustic resonator device comprising:
a piezoelectric layer having front and back surfaces, the back surface attached to a first metal layer having a first cavity except for a portion of the piezoelectric layer that forms a diaphragm that is over the first cavity;
a substrate having front and back surfaces, the front surface of the substrate attached to a second metal layer having a second cavity except for a portion of the substrate that spans the second cavity; and
an interdigital transducer (IDT) on the front surface of the piezoelectric layer such that interleaved fingers of the IDT are disposed on the diaphragm.
10 . The device of claim 9 , further comprising a metal-to-metal bond configured to bond the first metal layer to the second metal layer such that the interleaved fingers of the IDT are disposed over at least one of the first cavity and the second cavity.
11 . The device of claim 9 , wherein the piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode within the diaphragm, the excited primary shear acoustic mode being a bulk shear mode in which acoustic energy propagates along a direction substantially orthogonal to the front and back surfaces of the piezoelectric layer, which is also normal to a direction of an electric field generated by the interleaved fingers of the IDT.