Surface acoustic wave (SAW) resonator having trap-rich region
View Patent ↗A surface acoustic wave (SAW) resonator device includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate comprises a bulk region, and a surface region. The surface region has a high trap density, and a reduced carrier mobility, compared to the bulk region. A piezoelectric layer, having a first surface and a second surface, is disposed over the semiconductor substrate. A plurality of electrodes are disposed over the first surface of the piezoelectric layer, and the plurality of electrodes are configured to generate surface acoustic waves in the piezoelectric layer. The SAW resonator device also comprises a layer disposed between the first surface of the semiconductor substrate and the second surface of the piezoelectric layer.
1. A surface acoustic wave (SAW) resonator device, comprising:
a semiconductor substrate having a first surface and a second surface, the semiconductor substrate comprising a bulk region and a surface region wherein the surface region has a high trap density and a reduced carrier mobility compared to the bulk region, wherein the first surface of the semiconductor substrate comprises a plurality of features;
a piezoelectric layer disposed over the semiconductor substrate, the piezoelectric layer having a first surface and a second surface;
a plurality of electrodes disposed over the first surface of the piezoelectric layer, the plurality of electrodes configured to generate surface acoustic waves in the piezoelectric layer;
a layer having a first surface and a second surface, the layer being disposed between the first surface of the semiconductor substrate and the second surface of the piezoelectric layer; and
a silicon layer having a first surface and a second surface, the silicon layer being disposed between the first surface of the layer and the second surface of the piezoelectric layer, the first surface of the silicon layer having a smoothness sufficient to foster atomic bonding between the first surface of the silicon layer and the second surface of the piezoelectric layer, wherein the plurality of features reflect acoustic waves and reduce an incidence of spurious modes in the piezoelectric layer.
2. The SAW resonator device as claimed in claim 1 , wherein the layer comprises an oxide material.
3. The SAW resonator device as claimed in claim 2 , wherein the oxide material comprises silicon dioxide (SiO 2 ).
4. The SAW resonator device as claimed in claim 1 , wherein the surface region comprises a same material as the semiconductor substrate.
5. The SAW resonator device as claimed in claim 4 , wherein the bulk region is a substantially monocrystalline semiconductor, and the surface region is substantially amorphous semiconductor, or substantially polycrystalline semiconductor.
6. The SAW resonator device as claimed in claim 1 , wherein the surface region has a thickness that exceeds a thickness of an inversion channel in a known semiconductor substrate which has the layer disposed thereon.
7. The SAW resonator device of claim 1 , wherein the surface region has a thickness within a range of approximately 1 nm and approximately 700 μm.
8. The SAW resonator device of claim 1 , wherein the surface region comprises polycrystalline material with an average grain size of more than 10 times smaller than a thickness of the surface region.
9. The SAW resonator device of claim 8 , wherein the average grain size is at least 10 times smaller than an area of the SAW resonator.
10. The SAW resonator device of claim 1 , wherein the surface region comprises a layer of amorphous semiconductor material.
11. The SAW resonator device of claim 1 , wherein the surface region comprises implanted ion atoms, which deteriorate a monocrystalline lattice structure of the semiconductor substrate.
12. The SAW resonator device as claimed in claim 1 , wherein the plurality of features each have a height in a range of approximately 0.25 μm to approximately 1.5 μm.
13. The SAW resonator device as claimed in claim 1 , wherein the plurality of features each have a height in a range of approximately 0.1 μm to approximately 2.50 μm.
14. The SAW resonator device as claimed in claim 1 , wherein the plurality of features have a plurality of heights, and each of the pluralities of heights is approximately a height in a range of approximately one-fourth of a wavelength (¼λ) of one of the spurious modes.
15. The SAW resonator device as claimed in claim 1 , wherein the plurality of features are substantially not in a regular pattern.
16. The SAW resonator device as claimed in claim 1 , wherein the plurality of features each have a height of approximately one-fourth of a wavelength (¼λ) of a spurious mode.
17. A surface acoustic wave (SAW) filter comprising a plurality of the SAW resonator devices as recited in claim 1 .
18. A surface acoustic wave (SAW) resonator device, comprising:
a semiconductor substrate having a first surface and a second surface, the semiconductor substrate comprising a bulk region and a surface region wherein the surface region has a high trap density and a reduced carrier mobility compared to the bulk region, wherein the first surface of the semiconductor substrate comprises a plurality of features;
a piezoelectric layer disposed over the semiconductor substrate, the piezoelectric layer having a first surface and a second surface;
a plurality of electrodes disposed over the first surface of the piezoelectric layer, the plurality of electrodes configured to generate surface acoustic waves in the piezoelectric layer; and
a layer having a first surface and a second surface, the layer being disposed between the first surface of the semiconductor substrate and the second surface of the piezoelectric layer, wherein the plurality of features each have a height of approximately one-fourth of a wavelength (¼λ) of a spurious mode, and the plurality of features reflect acoustic waves and reduce an incidence of spurious modes in the piezoelectric layer.
19. The SAW resonator device as claimed in claim 18 , wherein the layer comprises an oxide material.
20. The SAW resonator device as claimed in claim 19 , wherein the oxide material comprises silicon dioxide (SiO 2 ).
21. The SAW resonator device as claimed in claim 19 , wherein the first surface of the layer has a root-mean-square (RMS) variation in height of approximately 0.1 Å to approximately 10.0 Å.
22. The SAW resonator device as claimed in claim 18 , the first surface of the layer having a smoothness sufficient to foster atomic bonding between the first surface of the layer and the second surface of the piezoelectric layer.
23. The SAW resonator device as claimed in claim 18 , wherein the surface region comprises a same material as the semiconductor substrate.
24. The SAW resonator device as claimed in claim 23 , wherein the bulk region is a substantially monocrystalline semiconductor, and the surface region is substantially amorphous semiconductor, or substantially polycrystalline semiconductor.
25. A surface acoustic wave (SAW) resonator device, comprising:
a semiconductor substrate having a first surface and a second surface, the semiconductor substrate comprising a bulk region and a surface region wherein the surface region has a high trap density and a reduced carrier mobility compared to the bulk region;
a piezoelectric layer disposed over the semiconductor substrate, the piezoelectric layer having a first surface and a second surface, wherein the second surface of the piezoelectric layer comprises a plurality of features;
a plurality of electrodes disposed over the first surface of the piezoelectric layer, the plurality of electrodes configured to generate surface acoustic waves in the piezoelectric layer; and
a layer having a first surface and a second surface, the layer being disposed between the first surface of the semiconductor substrate and the second surface of the piezoelectric layer, wherein the plurality of features each have a height of approximately one-fourth of a wavelength (¼λ) of a spurious mode, and the plurality of features reflect acoustic waves and reduce an incidence of spurious modes in the piezoelectric layer.
26. The SAW resonator device as claimed in claim 25 , wherein the plurality of features is a first plurality of features, and the first surface of the layer comprises a second plurality of features which engage the first plurality of features.
27. The SAW resonator device as claimed in claim 26 , wherein the second plurality of features each have a height of approximately one-fourth of a wavelength (¼λ) of a spurious mode, and the second plurality of features reflect acoustic waves and reduce an incidence of spurious modes in the piezoelectric layer.
28. The SAW resonator device as claimed in claim 26 , wherein each of the first plurality of features, and each of the second plurality of features have a height in a range of approximately 0.25 μm to approximately 1.5 μm.
29. The SAW resonator device as claimed in claim 25 , wherein the layer comprises an oxide material.
30. The SAW resonator device as claimed in claim 29 , wherein the oxide material comprises silicon dioxide (SiO 2 ).
31. The SAW resonator device as claimed in claim 25 , the second surface of the layer having a smoothness sufficient to foster atomic bonding between the second surface of the layer and the first surface of the semiconductor substrate.
32. The SAW resonator device as claimed in claim 25 , wherein the surface region comprises a same material as the semiconductor substrate.
33. The SAW resonator device as claimed in claim 32 , wherein the bulk region is a substantially monocrystalline semiconductor, and the surface region is substantially amorphous semiconductor, or substantially polycrystalline semiconductor.
34. The SAW resonator device as claimed in claim 25 , wherein the plurality of features each have a height in a range of approximately 0.25 μm to approximately 1.5 μm.