Bulk acoustic wave resonator structure
Embodiments of this disclosure relate to bulk acoustic wave resonators on a substrate. The bulk acoustic wave resonators include a first bulk acoustic wave resonator, a second bulk acoustic wave resonator, a conductor electrically connecting the first bulk acoustic wave resonator to the second bulk acoustic wave resonator, and an air gap positioned between the conductor and a surface of the substrate.
1. An acoustic wave component comprising:
a first bulk acoustic wave resonator on a substrate, the first bulk acoustic wave resonator including a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-layer raised frame structure, the multi-layer raised frame structure being over an air cavity and including a layer positioned between the piezoelectric layer and the first electrode, and the air cavity extending laterally beyond the multi-layer raised frame structure away from a central region of the first bulk acoustic wave resonator;
a second bulk acoustic wave resonator on the substrate;
a conductor electrically connecting the first bulk acoustic wave resonator to the second bulk acoustic wave resonator; and
an air gap positioned between the conductor and a surface of the substrate.
2. The acoustic wave component of claim 1 wherein the conductor electrically connects the first bulk acoustic wave resonator in anti-series with the second bulk acoustic wave resonator.
3. The acoustic wave component of claim 1 wherein the first bulk acoustic wave resonator is a first film bulk acoustic wave resonator, and the second bulk acoustic wave resonator is a second film bulk acoustic wave resonator.
4. An acoustic wave component comprising:
a first film bulk acoustic wave resonator on a substrate, the first film bulk acoustic wave resonator including a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-layer raised frame structure, the multi-layer raised frame structure being over an air cavity and including a layer positioned between the piezoelectric layer and the first electrode, and the air cavity extending laterally beyond the multi-layer raised frame structure;
a second film bulk acoustic wave resonator on the substrate;
a conductor electrically connecting the first film bulk acoustic wave resonator to the second film bulk acoustic wave resonator; and
an air gap positioned between the conductor and a surface of the substrate, the air gap and the air cavity being included in a common air cavity for the first film bulk acoustic wave resonator and the second film bulk acoustic wave resonator.
5. The acoustic wave component of claim 1 wherein the air gap is a second air cavity, and the second air cavity is in the substrate.
6. The acoustic wave component of claim 1 wherein the air gap is positioned between a layer of piezoelectric material and the substrate.
7. The acoustic wave component of claim 1 wherein the air gap is an air bridge over a surface of the substrate closest to a piezoelectric layer of the first bulk acoustic wave resonator.
8. The acoustic wave component of claim 1 wherein the air gap is an air bridge positioned between a layer of piezoelectric material and the conductor.
9. The acoustic wave component of claim 1 wherein the layer of the multi-layer raised frame structure is a silicon dioxide layer.
10. The acoustic wave component of claim 1 wherein the first bulk acoustic wave resonator includes a recessed frame structure.
11. The acoustic wave component of claim 1 wherein the second bulk acoustic wave resonator includes a second multi-layer raised frame structure.
12. A front end module comprising:
an acoustic wave filter including a first bulk acoustic wave resonator having a multi-layer raised frame structure and being on a substrate, a second bulk acoustic wave resonator on the substrate, a conductor electrically connecting the first bulk acoustic wave resonator to the second bulk acoustic wave resonator, and an air gap positioned between the conductor and a surface of the substrate, the multi-layer raised frame structure being over an air cavity that extends laterally beyond the multi-layer raised frame structure away from a central region of the first bulk acoustic wave resonator; and
a radio frequency switch coupled to a port of the acoustic wave filter, the radio frequency switch configured to pass a radio frequency signal.
13. The front end module of claim 12 comprising a radio frequency amplifier, the radio frequency switch configured to selectively electrically connect the radio frequency amplifier and the acoustic wave filter.
14. The front end module of claim 12 wherein the acoustic wave filter is configured to filter fifth generation New Radio signal within a frequency band in Frequency Range 1 .
15. The front end module of claim 12 wherein the conductor electrically connects the first bulk acoustic wave resonator in anti-series with the second bulk acoustic wave resonator.
16. The front end module of claim 12 wherein the acoustic wave filter is a transmit filter having an antenna port, and the first bulk acoustic wave resonator and the second bulk acoustic wave resonator are coupled between all other series bulk acoustic wave resonators of the acoustic wave filter and the antenna port.
17. A wireless communication device comprising:
an antenna; and
a radio frequency front end in communication with the antenna and including an acoustic wave filter, the acoustic wave filter including a first bulk acoustic wave resonator having a multi-layer raised frame structure and being on a substrate, a second bulk acoustic wave resonator on the substrate, a conductor electrically connecting the first bulk acoustic wave resonator to the second bulk acoustic wave resonator, and an air gap positioned between the conductor and a surface of the substrate, the multi-layer raised frame structure being over an air cavity that extends laterally beyond the multi-layer raised frame structure away from a central region of the first bulk acoustic wave resonator.
18. The wireless communication device of claim 17 wherein the conductor electrically connects the first bulk acoustic wave resonator in anti-series with the second bulk acoustic wave resonator.
19. The wireless communication device of claim 18 wherein the acoustic wave filter is a transmit filter having an antenna port, and the first bulk acoustic wave resonator and the second bulk acoustic wave resonator are coupled between all other series bulk acoustic wave resonators of the acoustic wave filter and the antenna port.
20. The wireless communication device of claim 17 wherein the wireless communication device is a mobile phone.
21. An acoustic wave component comprising:
a first bulk acoustic wave resonator on a substrate, the first bulk acoustic wave resonator including a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-layer raised frame structure, the multi-layer raised frame structure being over an air cavity and including a silicon dioxide layer positioned between the piezoelectric layer and the first electrode, a first layer of the multi-layer raised frame structure including a metal, a second layer of the multi-layer raised frame structure being the silicon dioxide layer, and the air cavity extending laterally beyond the multi-layer raised frame structure;
a second bulk acoustic wave resonator on the substrate;
a conductor electrically connecting the first bulk acoustic wave resonator to the second bulk acoustic wave resonator; and
an air gap positioned between the conductor and a surface of the substrate.