Electroacoustic components and methods thereof
An improved electroacoustic component is provided. The component includes a carrier wafer with a passivation layer, a piezoelectric layer above the passivation layer and an interdigitated transducer in an electrode layer on the piezoelectric layer. The component is configured to work with a shear mode.
1. An electroacoustic component comprising:
a carrier wafer with a passivation layer;
a piezoelectric layer disposed above the passivation layer; and
an interdigitated transducer in an electrode layer disposed on the piezoelectric layer, wherein the electroacoustic component is configured to work with a shear mode.
2. The component of claim 1 , wherein the piezoelectric layer comprises a LiNbO 3 single crystal substrate, wherein the substrate has a (YX1)/α cut with 50°<=α<=60° and a thickness of 0.25 μm, wherein the carrier wafer comprises Si, and wherein the passivation layer comprises SiO 2 and has a thickness of 0.25 μm.
3. The component of claim 1 , wherein the piezoelectric layer comprises a LiNbO 3 single crystal substrate, wherein the substrate has a (YX1)/α cut with 50°<=α<=60° and a thickness of 0.35 μm, wherein the carrier wafer comprises Si, and wherein the passivation layer comprises SiO 2 and has a thickness of 0.25 μm.
4. The component of claim 1 , wherein the piezoelectric layer comprises a LiNbO 3 single crystal substrate, wherein the substrate has a (YX1)/α cut with α=55° and a thickness of 0.25 μm, wherein the carrier wafer comprises Si, and wherein the passivation layer comprises SiO 2 and has a thickness of 0.25 μm.
5. The component of claim 1 , wherein the piezoelectric layer comprises a LiNbO 3 single crystal substrate, wherein the substrate has a (YX1)/α cut with α=55° and a thickness of 0.35 μm, wherein the carrier wafer comprises Si, and wherein the passivation layer comprises SiO 2 and has a thickness of 0.55 μm.
6. The component of claim 1 , wherein the piezoelectric layer comprises a LiNbO 3 single crystal substrate, wherein the interdigitated transducer has a metallization ratio of η=0.5, wherein a relative electrode height of h/λ=0.01, wherein the substrate has a (YX1)/α cut with α=55° and a thickness of 0.35 μm, wherein the carrier wafer comprises Si, wherein the passivation layer comprises SiO 2 and has a thickness of 0.55 μm.
7. The component of claim 1 , wherein the piezoelectric layer comprises a LiNbO 3 single crystal substrate, wherein the interdigitated transducer has a metallization ratio of η=0.5, wherein a relative electrode height of h/λ=0.01, wherein the substrate has a (YX1)/α cut with α=55° and a thickness of 0.175 μm, wherein the carrier wafer comprises Si, and wherein the passivation layer comprises SiO 2 and has a thickness of 0.275 μm.
8. The component of claim 1 , wherein the piezoelectric layer comprises a LiNbO 3 single crystal substrate, wherein the interdigitated transducer has a metallization ratio of 0.4<=η<=0.5, wherein a relative electrode height of h/λ=0.05, wherein the substrate has a (YX1)/α cut with α=55° and a thickness of 0.35 μm, wherein the carrier wafer comprises Si, and wherein the passivation layer comprises SiO 2 and has a thickness of 0.55 μm.
9. The component of claim 1 , wherein the piezoelectric layer comprises a LiNbO 3 single crystal substrate, wherein the interdigitated transducer has a metallization ratio of η=0.8, wherein the substrate has a (YX1)/α cut with α=52°, wherein the carrier wafer comprises Si, and wherein the passivation layer comprises SiO 2 .
10. The component of claim 1 , wherein the piezoelectric layer comprises a LiNbO 3 single crystal substrate, wherein the substrate has a (YX1)/α cut with α=52° and a thickness of 0.2 μm, wherein the carrier wafer comprises Si, and wherein the passivation layer comprises SiO 2 and has a thickness of 0.4 μm.
11. The component of claim 1 , wherein the piezoelectric layer comprises a LiNbO 3 single crystal substrate, wherein the substrate has a (YX1)/α cut with α=55° and a thickness of 0.35 μm, wherein the carrier wafer comprises Si, and wherein the passivation layer comprises SiO 2 and has a thickness of 0.55 μm.
12. The component of claim 1 , wherein the piezoelectric layer comprises a LiNbO 3 single crystal substrate, wherein the substrate has a (YX1)/α cut with α=52° and a thickness of 0.20 μm, wherein the carrier wafer comprises Si, and wherein the passivation layer comprises SiO 2 and has a thickness of 0.40 μm.
13. The component of claim 1 , wherein the piezoelectric layer comprises a LiTaO 3 single crystal substrate.
14. The component of claim 13 , wherein the substrate has a (YX1)/α cut with α=48° and a thickness of 0.465 μm, and wherein the passivation layer comprises SiO 2 and has a thickness of 0.10 μm.
15. The component of claim 13 , wherein the substrate has a (YX1)/α cut with α=55°, wherein the passivation layer comprises SiO 2 and has a thickness of 1.0 μm, and wherein the component is further configured to work with leaky surface acoustic wave (LSAW), and wherein the carrier wafer has a thickness >=350 μm.
16. The component of claim 13 , wherein the substrate has a (YX1)/α cut with α=48° and a thickness of 0.465 μm, and wherein the passivation layer comprises SiO 2 and has a thickness of 1.0 μm.
17. The component of claim 13 , wherein the carrier wafer is configured to be a wave-guiding material.
18. The component of claim 13 , further comprising a Bragg mirror structure below the substrate.
19. The component of claim 18 , where the carrier wafer comprises Si, sapphire, or diamond-carbon.
20. The component of claim 1 , wherein the piezoelectric layer comprises LiNbO 3 , has a (YX1)/α cut with 45°<=α<=60° and a thickness of 1.1 μm, wherein the passivation layer comprises SiO 2 and has a thickness of 3 μm, and wherein the carrier wafer has a thickness >=350 μm.
21. The component of claim 1 , wherein the piezoelectric layer comprises LiNbO 3 and has a (YX1)/α cut with α=52°.
22. The component of claim 1 , wherein the piezoelectric layer comprises LiNbO 3 and has a (YX1)/α cut with α=52° and a thickness of 1.0 μm, wherein the passivation layer comprises SiO 2 and has a thickness of 1.0 μm, and wherein the carrier wafer has a thickness >=350 μm.
23. The component of claim 1 , wherein the piezoelectric layer comprises LiNbO 3 and has a (YX1)/α cut with α=52° and a thickness of 1.1 μm, wherein the carrier wafer has a thickness >=350 μm.
24. The component of claim 1 , wherein the piezoelectric layer comprises LiNbO 3 and has a (YX1)/α cut with α=52°, wherein the passivation layer comprises SiO 2 and has a thickness of 1.5 μm, and wherein the carrier wafer has a thickness >=350 μm.
25. The component of claim 1 , wherein the piezoelectric layer comprises LiNbO 3 and has a (YX1)/α cut with α=52° and a thickness of 1.2 μm, wherein the passivation layer comprises SiO 2 and has a thickness of 1.5 μm, and wherein the carrier wafer has a thickness >=350 μm.
26. The component of claim 1 , wherein the piezoelectric layer comprises LiNbO 3 and has a (YX1)/α cut with α=52° and a thickness of 1.2 μm, wherein the passivation layer comprises SiO 2 and has a thickness >=4.0 μm, and wherein the carrier wafer has a thickness >=350 μm.
27. The component of claim 1 , wherein the piezoelectric layer comprises LiTaO 3 and has a (YX1)/α cut with 48°<=α<=52°, wherein the passivation layer comprises SiO 2 and has half the thickness of the carrier wafer, and wherein the carrier wafer has a thickness >=350 μm.
28. The component of claim 1 , wherein the piezoelectric layer comprises LiTaO 3 and has a (YX1)/α cut with 48°<=α<=52° and a thickness of 1.2 μm, wherein the passivation layer comprises SiO 2 and has a thickness of 1.4 μm, and wherein the carrier wafer has a thickness >=350 μm.
29. The component of claim 1 , wherein the piezoelectric layer comprises LiTaO 3 and has a (YX1)/α cut with α=48° and a thickness of 1.2 μm, wherein the passivation layer comprises SiO 2 and has a thickness of 1.3 μm, and wherein the carrier wafer has a thickness >=350 μm.
30. The component of claim 1 , wherein the piezoelectric layer comprises LiTaO 3 and has a (YX1)/α cut with α=48° and a thickness of 2 μm, wherein the passivation layer comprises SiO 2 and has a thickness of 1.5 μm, and wherein the carrier wafer has a thickness >=350 μm.
31. The component of claim 1 , wherein the piezoelectric layer comprises LiTaO 3 and has a (YX1)/α cut with α=48° and a thickness of 2 μm, wherein the passivation layer comprises SiO 2 and has a thickness of 2 μm, and wherein the carrier wafer has a thickness >=350 μm.
32. The component of claim 1 , wherein the piezoelectric layer comprises LiNbO 3 and has a thickness of 1.4 μm, wherein the passivation layer comprises SiO 2 and has a thickness of 5 μm, wherein the interdigitated transducer has a metallization ratio of 0.4<=η<=0.5 and a relative electrode height h/λ=0.068, and wherein the carrier wafer has a thickness >=350 μm.
33. The component of claim 1 , wherein the piezoelectric layer comprises LiNbO 3 and has a thickness of 1.2 μm, wherein the passivation layer comprises SiO 2 and has a thickness of 5 μm, wherein the interdigitated transducer has a metallization ratio of 0.4<=η1<=0.5 and a relative electrode height h/λ=0.068, and wherein the carrier wafer has a thickness >=350 μm.
34. The component of claim 1 , wherein the electroacoustic component is an RF-filter operating at a center frequency 1710 MHz <=f<=1785 MHz.
35. An electroacoustic component comprising;
a carrier wafer with a passivation layer;
a piezoelectric layer disposed above the passivation layer;
an interdigitated transducer disposed in an electrode layer on the piezoelectric layer; and
a Bragg mirror structure disposed below the piezoelectric layer, wherein the electroacoustic component is configured to work with a higher order Lamb mode.