Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer
A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.
1. A boron nitride layer comprising:
a boron nitride compound, the boron nitride layer having a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz, wherein
the boron nitride layer has a mass density of about 1 to about 3 g/cm 3 and is at least one of amorphous and nanocrystalline.
2. The boron nitride layer of claim 1 , wherein a ratio of boron to nitrogen of the boron nitride layer is about 0.9 to about 1.1.
3. The boron nitride layer of claim 1 , wherein the boron nitride layer is non-porous.
4. The boron nitride layer of claim 1 , wherein the boron nitride layer comprises one or more pores.
5. The boron nitride layer of claim 1 , wherein a breakdown field of the boron nitride layer is about 4 MVcm−1 or more.
6. The boron nitride layer of claim 1 , wherein a breakdown field of the boron nitride layer is about 10 MVcm −1 or less.
7. The boron nitride layer of claim 1 , wherein a roughness of the boron nitride layer is about 0.3 to about 0.6 root-mean-square (RMS).
8. The boron nitride layer of claim 1 , wherein the boron nitride layer has an energy band gap of about 6.00 eV or less.
9. The boron nitride layer of claim 1 , wherein the nitrogen and the boron of the boron nitride compound comprise an sp 2 bond.
10. The boron nitride layer of claim 1 , wherein the boron nitride layer has a hydrogen content of about 10% or less.
11. The boron nitride layer of claim 1 , wherein the boron nitride layer has a dielectric constant of about 2.3 or less at the operating frequency of 100 kHz.
12. The boron nitride layer of claim 11 , wherein the boron nitride layer is amorphous.
13. The boron nitride layer of claim 1 , wherein the boron nitride layer has a dielectric constant of about 2.3 to about 2.5 at the operating frequency of 100 kHz.
14. The boron nitride layer of claim 13 , wherein the boron nitride layer is nanocrystalline and comprises a nano crystal.
15. A method of fabricating a boron nitride layer, the method comprising:
preparing a substrate; and
growing the boron nitride layer on the substrate using a plasma from a reaction gas comprising a boron nitride source at a temperature of about 700° C. or less, wherein
the boron nitride layer has a mass density of about 1 to about 3 g/cm 3 and comprises at least one of an amorphous structure and a nano crystal.
16. The method of claim 15 , wherein the preparing the substrate comprises pretreating the substrate.
17. The method of claim 15 , wherein the plasma comprises at least one of an inductively coupled plasma, a capacitively coupled plasma, a microwave plasma, a plasma enhanced method, an electron cyclotron resonance plasma, an arc discharge plasma, and a helicon plasma.
18. The method of claim 15 , wherein the boron nitride layer has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.
19. The method of claim 15 , wherein the boron nitride layer comprises the amorphous structure.
20. The boron nitride layer of claim 1 ,
wherein the boron nitride layer has a hydrogen content of above 10% or less and greater than 0%.