Pixel or display with sub pixels selected by antifuse programming
Devices and methods of their fabrication for pixels or displays are disclosed. Pixels and displays having redundant subpixels are described. Subpixels are initially isolated by an unprogrammed antifuse. A subpixel is connected to the display by programming the antifuse, electrically connecting it to the pixel or display. Defective subpixels can be determined by photoluminescent testing or electroluminescent testing, or both. A redundant subpixel can replace a defective subpixel before pixel or display fabrication is complete.
1. A pixel comprising:
a plurality of data lines, wherein each data line is coupled to a data circuit;
a plurality of select lines, wherein each select line is coupled to a select circuit;
a plurality of first group subpixels, wherein each first group subpixel comprises
at least one first group LED,
a first group control circuit coupled to the at least one first group LED, and
a first group antifuse disposed between a select line and the first group control circuit; and
a plurality of second group subpixels, wherein each second group subpixel comprises
at least one second group LED,
a second group control circuit coupled to the at least one second group LED, and
a second group antifuse disposed between a select line and the second group control circuit.
2. The pixel of claim 1 wherein each first group antifuse and each second group antifuse comprise a first conductive layer, a second conductive layer, and an antifuse dielectric layer disposed between and in contact with the first and second conductive layers.
3. The pixel of claim 2 wherein the antifuse dielectric layer comprises silicon oxide, silicon nitride, or aluminum oxide.
4. The pixel of claim 2 wherein each first group antifuse and each second group antifuse can be programmed by a voltage pulse of greater than 14 volts.
5. The pixel of claim 1 wherein at least one of the first group subpixels emits light with a dominant wavelength between 450 nm and 490 nm, at least one of the first group subpixels emits light with a dominant wavelength between 490 nm and 570 nm, and at least one of the first group subpixels emits light with a dominant wavelength between 620 and 750 nm.
6. The pixel of claim 1 wherein at least one of the plurality of first group subpixels and at least one of the plurality of second group subpixels further comprises a wavelength-converting layer.
7. The pixel of claim 6 wherein the wavelength-converting layer comprises quantum dots or quantum wells.
8. The pixel of claim 1 wherein each first group control circuit and each second group control circuit comprise at least one transistor and wherein the at least one transistor comprises single crystal semiconductor.
9. The pixel of claim 1 wherein the largest dimension of at least one of the at least one first group LEDs is less than 20 microns.
10. The pixel of claim 1 where each LED of the first group of subpixels comprises gallium nitride, indium gallium nitride, indium arsenide, aluminum gallium arsenide, gallium arsenide, gallium phosphide, gallium arsenide phosphide, aluminum indium gallium phosphide, gallium arsenide nitride, aluminum indium arsenide, aluminum antimonide, indium phosphide, indium antimonide, or indium gallium arsenide phosphide, or combinations thereof.
11. A pixel comprising:
a plurality of data lines, wherein each data line is coupled to a data circuit;
a plurality of select lines, wherein each select line is coupled to a select circuit;
a plurality of first group subpixels wherein each first group subpixel comprises
at least one first group LED,
a first group control circuit coupled to the at least one first group LED, and
a first group antifuse disposed between a data line and the first group control circuit; and
a plurality of second group subpixels, wherein each second group subpixel comprises
at least one second group LED,
a second group control circuit coupled to the at least one second group LED, and
a second group antifuse disposed between a data line and the second group control circuit.
12. The pixel of claim 11 wherein each first group antifuse and each second group antifuse comprise a first conductive layer, a second conductive layer, and an antifuse dielectric layer disposed between and in contact with the first and second conductive layers.
13. The pixel of claim 12 wherein the antifuse dielectric layer comprises silicon oxide, silicon nitride, or aluminum oxide.
14. The pixel of claim 12 wherein each first group antifuse and each second group antifuse can be programmed by a voltage pulse of greater than 14 volts.
15. The pixel of claim 11 wherein at least one of the first group subpixels emits light with a dominant wavelength between 450 nm and 490 nm, at least one of the first group subpixels emits light with a dominant wavelength between 490 nm and 570 nm, and at least one of the first group subpixels emits light with a dominant wavelength between 620 and 750 nm.
16. The pixel of claim 11 wherein at least one of the plurality of first group subpixels and at least one of the plurality of second group subpixels further comprises a wavelength-converting layer.
17. The pixel of claim 16 wherein the wavelength-converting layer comprises quantum dots or quantum wells.
18. The pixel of claim 11 wherein each first group control circuit and each second group control circuit comprise at least one transistor, wherein the at least one transistor comprises single crystal semiconductor.
19. The pixel of claim 11 wherein the largest dimension of at least one of the at least one first group LEDs is less than 20 microns.
20. The pixel of claim 11 where each LED of the first group of subpixels comprises gallium nitride, indium gallium nitride, indium arsenide, aluminum gallium arsenide, gallium arsenide, gallium phosphide, gallium arsenide phosphide, aluminum indium gallium phosphide, gallium arsenide nitride, aluminum indium arsenide, aluminum antimonide, indium phosphide, indium antinionide, or indium gallium arsenide phosphide, or combinations thereof.
21. A pixel comprising:
a plurality of data lines, wherein each data line is coupled to a data circuit;
a plurality of select lines, wherein each select line is coupled to a select circuit;
a plurality of power lines;
a plurality of first group subpixels wherein each first group subpixel comprises
at least one first group LED,
a first group control circuit coupled to the at least one first group LED, and
a first group antifuse disposed between a power line and the first group control circuit; and
a plurality of second group subpixels, wherein each second group subpixel comprises
at least one second group LED,
a second group control circuit coupled to the at least one second group LED, and
a second group antifuse disposed between a power line and the second group control circuit.
22. The pixel of claim 21 wherein each first group antifuse and each second group antifuse comprise a first conductive layer, a second conductive layer, and an antifuse dielectric layer disposed between and in contact with the first and second conductive layers.
23. The pixel of claim 21 wherein the antifuse dielectric layer comprises silicon oxide, silicon nitride, or aluminum oxide.
24. The pixel of claim 21 wherein each first group antifuse and each second group antifuse can be programmed by a voltage pulse of greater than 14 volts.
25. The pixel of claim 21 wherein at least one of the first group subpixels emits light with a dominant wavelength between 450 nm and 490 nm, at least one of the first group subpixels emits light with a dominant wavelength between 490 nm and 570 nm, and at least one of the first group subpixels emits light with a dominant wavelength between 620 and 750 nm.
26. The pixel of claim 21 wherein at least one of the plurality of first group subpixels and at least one of the plurality of second group subpixels further comprises a wavelength-converting layer.
27. The pixel of claim 26 wherein the wavelength-converting layer comprises quantum dots or quantum wells.
28. The pixel of claim 21 wherein each first group control circuit and each second group control circuit comprise at least one transistor, wherein the at least one transistor comprises single crystal semiconductor.
29. The pixel of claim 21 wherein the largest dimension of at least one of the at least one first group LEDs is less than 20 microns.
30. The pixel of claim 21 where each LED of the first group of subpixels comprises gallium nitride, indium gallium nitride, indium arsenide, aluminum gallium arsenide, gallium arsenide, gallium phosphide, gallium arsenide phosphide, aluminum indium gallium phosphide, gallium arsenide nitride, aluminum indium arsenide, aluminum antimonide, indium phosphide, indium antimonide, or indium gallium arsenide phosphide, or combinations thereof.