Electronic substrates having heterogeneous dielectric layers
An electronic substrate may be formed having at least one dielectric layer that is heterogeneous. The heterogeneous dielectric layer may comprise three separately formed materials that decouple the critical regions within a dielectric layer and allow for the optimization of desired interfacial properties, while minimizing the impact to the bulk requirements of the electronic substrate.
1. An apparatus, comprising:
a substrate comprising a dielectric material layer having a first conductive trace on a top surface thereof;
a multilayer dielectric over the dielectric material layer and the first conductive trace, the multilayer dielectric comprising:
a first layer on the dielectric material layer and the first conductive trace, wherein the first layer has a thickness of not more than 5 microns and is a material selected from the group consisting of epoxy resin, perfluorocyclobutane resin, and perfluorinated alkyl resin;
a second layer on the first layer; and
a third layer on the second layer, wherein the third layer has a thickness of not more than 5 microns and comprises a first carrier material with a first filler material dispersed therein, the first filler material having a volume percentage of not more than 50% of the third layer, and
wherein the second layer is thicker than each of the first layer and the third layer and comprises a second carrier material with a second filler material dispersed therein, the second filler material being a greater volume percentage of the second layer than the volume percentage of the first filler material of the third layer;
a second conductive trace on a top surface of the third layer; and
a conductive via extending through the first layer, the second layer, and the third layer and in contact with a top surface of the first conductive trace and a bottom surface of the second conductive trace.
2. The apparatus of claim 1 , wherein the second carrier material of the second layer comprises one of epoxy resin, benzocyclobutene resin, polyolefin, or polyimide.
3. The apparatus of claim 2 , wherein the second filler material of the second layer comprises silica.
4. The apparatus of claim 1 , wherein the first layer is functionalized with an aromatic amine and the third layer is functionalized with a carbodiimide.
5. The apparatus of claim 1 , wherein the first carrier material of the third layer comprises epoxy resin or polyimide.
6. The apparatus of claim 5 , wherein the first filler material of the third layer comprises silica.
7. The apparatus of claim 1 , further comprising a microelectronic device and/or a board coupled to the substrate.
8. An apparatus, comprising:
a substrate comprising a dielectric material layer having a first conductive trace on a top surface thereof;
a multilayer dielectric over the dielectric material layer and the first conductive trace, the multilayer dielectric comprising:
a first layer on the dielectric material layer and the first conductive trace, wherein the first layer has a thickness of not more than 5 microns and comprises a first carrier material with a first filler material dispersed therein, the first filler material having a volume percentage of not more than 50% of the first layer;
a second layer on the first layer, wherein the second layer comprises a second carrier material with a second filler material dispersed therein; and
a third layer on the second layer, wherein the third layer has a thickness of not more than 5 microns and comprises a third carrier material with a third filler material dispersed therein, the third filler material having a volume percentage of not more than 50% of the third layer, and
wherein the second layer is thicker than each of the first layer and the third layer, and the second filler material has a greater volume percentage of the second layer than each of the volume percentage of the first filler material of the first layer and the volume percentage of the third filler material of the third layer;
a second conductive trace on a top surface of the third layer; and
a conductive via extending through the first layer, the second layer, and the third layer and in contact with a top surface of the first conductive trace and a bottom surface of the second conductive trace.
9. The apparatus of claim 8 , wherein the first carrier material of the first layer comprises one of epoxy resin, perfluorocyclobutane resin, or perfluorinated alkyl resin, the second carrier material of the second layer comprises one of epoxy resin, benzocyclobutene resin, polyolefin, or polyimide, and the third carrier material of the third layer comprises one of epoxy resin or polyimide.
10. The apparatus of claim 9 , wherein the first filler material of the first layer, the second filler material of the second layer, and the third filler material of the third layer each comprises silica.
11. The apparatus of claim 8 , wherein the first layer is functionalized with an aromatic amine and the third layer is functionalized with a carbodiimide.
12. The apparatus of claim 8 , wherein the second filler material of the second layer has a volume percentage of not more than 80% of the second layer.
13. The apparatus of claim 8 , further comprising a microelectronic device and/or a board coupled to the substrate.
14. An apparatus, comprising:
a substrate comprising a dielectric material layer having a first conductive trace on a top surface thereof;
a multilayer dielectric over the dielectric material layer and the first conductive trace, the multilayer dielectric comprising:
a first layer on the dielectric material layer and the first conductive trace, wherein the first layer has a thickness of not more than 5 microns and comprises a first carrier material with a first filler material dispersed therein, the first filler material having a volume percentage of not more than 50% of the first layer and having an average diameter on the nanometer level;
a second layer on the first layer, wherein the second layer comprises a second carrier material with a second filler material dispersed therein, the second filler material having an average diameter on the micrometer level; and
a third layer on the second layer, wherein the third layer has a thickness of not more than 5 microns and comprises a third carrier material with a third filler material dispersed therein, the third filler material having a volume percentage of not more than 50% of the third layer, and
wherein the second layer is thicker than each of the first layer and the third layer;
a second conductive trace on a top surface of the third layer; and
a conductive via extending through the first layer, the second layer, and the third layer and in contact with a top surface of the first conductive trace and a bottom surface of the second conductive trace.
15. The apparatus of claim 14 , wherein the second filler material has a greater volume percentage of the second layer than each of the volume percentage of the first filler material of the first layer and the volume percentage of the third filler material of the third layer.
16. The apparatus of claim 15 , wherein the first filler material of the first layer, the second filler material of the second layer, and the third filler material of the third layer each comprises silica.
17. The apparatus of claim 14 , wherein the first carrier material of the first layer comprises one of epoxy resin, perfluorocyclobutane resin, or perfluorinated alkyl resin, the second carrier material of the second layer comprises one of epoxy resin, benzocyclobutene resin, polyolefin, or polyimide, and the third carrier material of the third layer comprises one of epoxy resin or polyimide.
18. The apparatus of claim 14 , wherein the first layer is functionalized with an aromatic amine and the third layer is functionalized with a carbodiimide.
19. The apparatus of claim 14 , wherein the second filler material of the second layer has a volume percentage of not more than 80% of the second layer.
20. The apparatus of claim 14 , further comprising a microelectronic device and/or a board coupled to the substrate.