Granted Patent
B2
US 12,441,939 · App. 17/086,285 · Granted Oct 14, 2025
Light emitting nanocrystals and methods of making light emitting nanocrystals
Assignee:
Massachusetts Institute of Technology
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Abstract
A composition can include a copper containing nanocrystal.
Claims (32)
1. A plurality of nanocrystals having the formula:
Cu—Al—X 2 , where X is S or Se,
wherein the nanocrystals have a luminescence quantum yield of at least 10%.
2. The plurality of nanocrystals of claim 1 , further comprising a zinc sulfide over coating.
3. The plurality of nanocrystals of claim 1 , wherein the nanocrystals are doped with zinc.
4. The plurality of nanocrystals of claim 1 , wherein the nanocrystals have an emission of between 380 and 560 nm.
5. The plurality of nanocrystals of claim 1 , wherein the nanocrystals have an emission of between 420 and 550 nm.
6. The plurality of nanocrystals of claim 1 , wherein the nanocrystals have an emission efficiency of at least 10%.
7. The plurality of nanocrystals of claim 1 , wherein the nanocrystals have a size of between 2 nm and 20 nm.
8. The plurality of nanocrystals of claim 1 , wherein the nanocrystals have a size of between 3 nm and 10 nm.
9. The plurality of nanocrystals of claim 1 , wherein the nanocrystals are CuAlS 2 nanocrystals.
10. A method of making semiconductor nanocrystals comprising:
heating a first mixture including:
a first M donor including Cu; and
a second M donor including Al; and
adding a first E donor including a sulfur or selenium to the first mixture, thereby forming a population of nanocrystal cores having the formula:
Cu—Al—X 2 , where X is S or Se,
the semiconductor nanocrystals having a luminescence quantum yield of at least 10%.
11. The method of claim 10 , wherein the nanocrystals are defective nanocrystals.
12. The method of claim 10 , wherein:
the nanocrystals comprise CuAlS 2 , and
further comprising adding ZnS to the first mixture after the adding of the first E donor such that the nanocrystals are alloyed with ZnS.
13. A semiconductor nanocrystal comprising a core including a IB-IIIA-VIA semiconductor material, wherein:
the nanocrystal has a luminescence quantum yield of at least 10%,
the nanocrystal has a peak luminescence emission wavelength in the range of 380 nm to 560 nm,
the nanocrystal is a defective nanocrystal,
the group IB element is copper,
the group IIIA element is aluminum, and
the group VIA element is sulfur or selenium.
14. The semiconductor nanocrystal of claim 13 , wherein the nanocrystal is doped with zinc.
15. The semiconductor nanocrystal of claim 13 , wherein the nanocrystal includes a zinc sulfide shell over the core.
16. The semiconductor nanocrystal of claim 13 , wherein the IB-IIIA-VIA semiconductor material is CuAlS 2 or CuAl 5 S 8 .
Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded Aug 1, 2025
From: BAWENDI, MOUNGI; HANSEN, ERIC
To: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Reel/Frame 071910/0375 →
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded Nov 30, 2021
From: BAWENDI, MOUNGI; HANSEN, ERIC
To: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Reel/Frame 058240/0787 →
CONFIRMATORY LICENSE
Recorded Apr 26, 2021
From: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
To: UNITED STATES DEPARTMENT OF ENERGY
Reel/Frame 056046/0511 →
Continuity (2)
Provisional Application
62929086
· Oct 31, 2019
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