IP Library › Granted Patent US 11,799,052
Granted Patent B2
US 11,799,052 · App. 17/087,632 · Granted Oct 24, 2023

Micro-electronic element transfer apparatus and micro-electronic element transfer method

Inventors: Yun-Li Li (MiaoLi County, TW); Yi-Chun Shih (MiaoLi County, TW)
Assignee: PlayNitride Display Co., Ltd.
H01L33/005H01L33/486H01L33/62H01L33/642H01L2933/0066
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Quick Facts
Patent No.
US 11,799,052
App. No.
17/087,632
Filed
Nov 3, 2020
Granted
Oct 24, 2023
Kind
B2
Art Unit
2895
USPC
257/79
Abstract

A micro-electronic element transfer apparatus including a first conveyer portion, a second conveyer portion, and a light source device is provided. The first conveyer portion is configured to output a plurality of micro-electronic elements. The second conveyer portion includes a first rolling component and a substrate. The substrate is disposed on the first rolling component and is moved through rolling of the first rolling component. A plurality of bumps are disposed on the substrate. The light source device is configured to irradiate the bumps for heating, and the bumps generate a phase transition. When the micro-electronic elements are outputted from the first conveyer portion, a connection force between the micro-electronic elements and the first conveyer portion is less than a connection force between the micro-electronic elements and the bumps. The micro-electronic elements are respectively bonded to the bumps. A micro-electronic element transfer method is also provided.

Claims (16)

1. A micro-electronic element transfer apparatus, comprising:

a first conveyer portion, configured to output a plurality of micro-electronic elements;

a second conveyer portion, comprising:

a first rolling component; and

a substrate, disposed on the first rolling component, moved through rolling of the first rolling component, wherein a plurality of bumps are disposed on the substrate; and

a light source device, configured to irradiate the bumps for heating, the bumps generating a phase transition;

wherein a connection force between the micro-electronic elements and the first conveyer portion is less than a connection force between the micro-electronic elements and the bumps when the micro-electronic elements are outputted from the first conveyer portion, and the micro-electronic elements are respectively bonded to the bumps.

2. The micro-electronic element transfer apparatus according to claim 1 , wherein a conductive connection pad is disposed on each of the micro-electronic elements, the light source device irradiates the conductive connection pads for heating and softening the conductive connection pads, and the micro-electronic elements are respectively bonded to the bumps through the conductive connection pads when the micro-electronic elements are outputted from the first conveyer portion.

3. The micro-electronic element transfer apparatus according to claim 1 , wherein the first conveyer portion further comprises a second rolling component and a carrier, the micro-electronic elements are disposed on the carrier, and the carrier is disposed on the second rolling component and conveys the micro-electronic elements through rolling of the second rolling component.

4. The micro-electronic element transfer apparatus according to claim 3 , wherein the micro-electronic elements are disposed on the carrier through a plurality of connection pads, the light source device irradiates the connection pads for heating, and the connection pads generate a phase transition so that the micro-electronic elements are outputted from the first conveyer portion.

5. The micro-electronic element transfer apparatus according to claim 4 , wherein each of the connection pads comprises a first surface connected to a corresponding one of the micro-electronic elements and a second surface connected to the carrier, and an area of the first surface is greater than an area of the second surface.

6. The micro-electronic element transfer apparatus according to claim 3 , wherein the carrier further comprises a photo-dissociation material, and the light source device irradiates the carrier so that the micro-electronic elements are detached from the carrier and are outputted from the first conveyer portion.

7. The micro-electronic element transfer apparatus according to claim 1 , wherein the substrate further comprises an adhesion layer disposed on the substrate and the bumps, and the light source device irradiates the adhesion layer so that via holes corresponding to the bumps are formed on the adhesion layer through burning and melting.

8. The micro-electronic element transfer apparatus according to claim 1 , wherein the bumps have various heights.

9. The micro-electronic element transfer apparatus according to claim 1 , wherein the phase transition of the bumps is between a glassy state and a molten liquid state.

10. The micro-electronic element transfer apparatus according to claim 2 , wherein a phase transition of the conductive connection pads is between a glassy state and a molten liquid state.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 4, 2020
From: LI, YUN-LI; SHIH, YI-CHUN
To: PLAYNITRIDE DISPLAY CO., LTD.
Reel/Frame 054262/0964 →
Priority Claims (1)
TW 109125053 · Jul 24, 2020 · national
Continuity (1)
Related Publication 20220029045A1 · Jan 27, 2022
Cited By (1)
US 12,685,088