Method and system for producing silicon carbide ingot

1. A silicon carbide ingot producing method, the method comprising:

arranging a raw material and a silicon carbide seed crystal to face each other in a reactor having an internal space;

depressurizing the internal space in an atmosphere;

injecting an inert gas into the depressurized internal space, followed by performing a heating operation to the pre-growth onset temperature, prior to the growth operation

performing a growth operation by controlling a temperature, a pressure, and the atmosphere of the internal space to sublimate the raw material, and grow a silicon carbide ingot from the silicon carbide seed crystal; and

cooling the reactor, and recovering the silicon carbide ingot,

wherein a heat insulating material surrounds an outer surface of the reactor, a heating device is configured to control the temperature of the internal space;

wherein the growth operation comprises a first growth process in which the temperature of the internal space increases from a pre-growth onset temperature to a development temperature, and a second growth process in which the development temperature is maintained to produce the silicon carbide ingot,

wherein the internal space is depressurized at the pre-growth onset temperature, the growth of the silicon carbide ingot is induced at the development temperature after completion of the depressurization of the internal space, a difference in temperature between an upper portion and a lower portion of the internal space at the pre-growth onset temperature is 40° C. to 60° C., the silicon carbide seed crystal is located in the upper portion of the internal space, and the raw material is located in the lower portion of the internal space, and

wherein a heating rate in the first growth process is lower than an average heating rate throughout the heating operation and the first growth process.

2. The method of claim 1 , wherein the heating device is configured to move in an upward direction and a downward direction from the reactor, and induce a difference in temperature between the upper portion and the lower portion of the internal space in the growth operation.

3. The method of claim 1 , wherein the pre-growth onset temperature in the lower portion of the internal space is 1500° C. to 1700° C.

4. The method of claim 1 , wherein the development temperature in the lower portion of the internal space in the growth step is 2100° C. to 2500° C.

5. The method of claim 1 , wherein a temperature difference at the development temperature is greater by 70° C. to 120° C. than a temperature difference at the pre-growth onset temperature.

6. The method of claim 1 , wherein a temperature difference at the development temperature in the first growth process is 110° C. to 160° C.

7. The method of claim 1 , wherein the internal space is depressurized to 1 torr to 50 torr in the first growth process.

8. The method of claim 1 , wherein the silicon carbide seed crystal comprises 4H silicon carbide of 4 inches or more.

9. The method of claim 1 , wherein a heating rate in the first growth process is 1° C./min to 5° C./min.

10. A silicon carbide ingot producing method, the method comprising:

arranging a raw material and a silicon carbide seed crystal to face each other in a reactor having an internal space;

performing a growth operation by controlling a temperature, a pressure, and an atmosphere of the internal space to sublimate the raw material, and grow a silicon carbide ingot from the silicon carbide seed crystal; and

cooling the reactor, and recovering the silicon carbide ingot,

wherein a heat insulating material surrounds an outer surface of the reactor, a heating device is configured to control the temperature of the internal space;

wherein the growth operation comprises a first growth process in which the temperature of the internal space increases from a pre-growth onset temperature to a development temperature, and a second growth process in which the development temperature is maintained to produce the silicon carbide ingot,

wherein the internal space is depressurized at the pre-growth onset temperature, the growth of the silicon carbide ingot is induced at the development temperature after completion of the depressurization of the internal space, a difference in temperature between an upper portion and a lower portion of the internal space at the pre-growth onset temperature is 40° C. to 60° C., the silicon carbide seed crystal is located in the upper portion of the internal space, and the raw material is located in the lower portion of the internal space,

wherein a recovery in the cooling operation is performed by cutting a rear surface of the silicon carbide ingot in contact with the silicon carbide seed crystal, and 5% or less of the entire area of the rear surface of the recovered silicon carbide ingot is lost after heating at a rate of 5° C./min from room temperature to 900° C. and oxidation heat treatment at 900° C. for 10 hours.

11. A silicon carbide ingot producing system, comprising:

a reactor having an internal space;

a heat insulating material surrounding an outer surface of the reactor; and

a heating device configured to control a temperature of the internal space,

wherein a silicon carbide seed crystal is located in an upper portion of the internal space, a raw material is located in a lower portion of the internal space;

wherein the heating device is configured to move in an upward direction and a downward direction from the reactor to control a difference in temperature between the upper portion of the internal space and the lower portion of the internal space,

wherein the internal space is depressurized at a pre-growth onset temperature, a growth of the silicon carbide ingot is induced at a development temperature after completion of a depressurization of the internal space, and a difference in temperature between the upper portion of the internal space and the lower portion of the internal space induced by the heating device is 40° C. to 60° C. at the pre-growth onset temperature, and

wherein 5% or less of the entire area of a rear surface of the silicon carbide ingot which was in contact with the silicon carbide seed crystal is lost after heating at a rate of 5° C./min from room temperature to 900° C. and oxidation heat treatment at 900° C. for 10 hours.