Systems and methods for power savings in row repaired memory

1. A memory device comprising:

a memory bank, comprising:

a first set of memory rows in a first section of the memory bank;

a first set of redundant rows in the first section of the memory bank;

a second set of memory rows in a second section of the memory bank;

a second set of redundant rows in the second section of the memory bank;

a repeater blocker circuit coupled to the second set of memory rows and the second set of redundant rows, wherein the repeater blocker circuit when in operation selectively blocks transmission of a signal from the first section of the memory bank to the second section of the memory bank; and

blocker control circuitry coupled to the repeater blocker circuit, wherein the blocker control circuitry when in operation transmits a control signal to control selective blocking of the signal by the repeater blocker circuit.

2. The memory device of claim 1 , wherein the blocker control circuitry comprises a first input that when in operation receives a first indication of whether a first redundant row of the second set of redundant rows in the second section of the memory bank is active.

3. The memory device of claim 2 , wherein the blocker control circuitry comprises a second input that when in operation receives a second indication of whether a second redundant row of the second set of redundant rows in the second section of the memory bank is active.

4. The memory device of claim 3 , wherein the blocker control circuitry comprises a third input that when in operation receives an indication of whether a row address value of the memory bank corresponds to the second section of the memory bank.

5. The memory device of claim 4 , wherein the blocker control circuitry generates the control signal based upon the indication of whether the row address value of the memory bank corresponds to the second section of the memory bank, the first indication of whether the first redundant row of the second set of redundant rows in the second section of the memory bank is active, and the second indication of whether the second redundant row of the second set of redundant rows in the second section of the memory bank is active.

6. The memory device of claim 1 , wherein a first redundant row of the second set of redundant rows of the memory bank comprises a fuse, wherein a state of the fuse comprises a location indication corresponding to whether a first memory row repaired by the first redundant row is located in the first set of memory rows in the first section of the memory bank or is located in the second set of memory rows in the second section of the memory bank.

7. The memory device of claim 6 , wherein the first redundant row of the second set of redundant rows of the memory bank comprises a first output that when in operation transmits a mapping indication based upon the location indication and an indication of whether the first redundant row is active.

8. The memory device of claim 7 , wherein the blocker control circuitry comprises a first input coupled to the first output, wherein the blocker control circuitry when in operation generates the control signal based upon the mapping indication and at least one additional mapping indication generated by a second redundant row of the second set of redundant rows of the memory bank.

9. The memory device of claim 1 , wherein the memory bank comprises a fuse, wherein a state of the fuse comprises a first indication of whether at least one redundant row of the redundant rows of the second set of redundant rows in the second section of the memory bank is mapped to a defective memory row of the first set of memory rows in the first section of the memory bank.

10. The memory device of claim 9 , wherein the blocker control circuitry comprises a first input that when in operation receives the first indication.

11. The memory device of claim 10 , wherein the blocker control circuitry comprises a second input that when in operation receives a second indication of whether a row address value of the memory bank corresponds to the second section of the memory bank.

12. The memory device of claim 11 , wherein the blocker control circuitry generates the control signal based upon the first indication and the second indication.

13. A memory device, comprising:

a memory divided into a first section and a second section;

a row decoder area disposed adjacent to the memory and coupled to the memory, wherein the row decoder area when in operation transmits a plurality of signals to memory rows of the memory via row match and latch circuits disposed in the row decoder area;

a repeater blocker circuit disposed in the row decoder area that when in operation selectively blocks transmission of at least one signal of the plurality of signals from a first portion of the row decoder area adjacent to the first section to a second portion of the row decoder area adjacent to the second section; and

blocker control circuitry that when in operation transmits a control signal to control selective blocking of the signal by the repeater blocker circuit.

14. The memory device of claim 13 , wherein the blocker control circuitry generates the control signal based upon a row address value and whether a redundant row in the second section is active.

15. The memory device of claim 13 , wherein the blocker control circuitry generates the control signal based upon an indication that a redundant row in the second section is active and is mapped to a memory row in the first section.

16. The memory device of claim 13 , wherein the memory comprises a fuse, wherein a state of the fuse comprises an indication of whether at least a redundant row in the second section is active and is mapped to a memory row in the first section.

17. The memory device of claim 16 , wherein the blocker control circuitry generates the control signal based upon the indication.