Apparatus and techniques for substrate processing using independent ion source and radical source

1. A system, comprising:

a substrate stage to support a substrate;

a plurality of beam sources, comprising:

an ion beam source, the ion beam source arranged to direct an ion beam to the substrate; and

a radical beam source, the radical beam source arranged to direct a radical beam to the substrate;

a controller arranged for controlling the ion beam source and the radical beam source to operate independently of one another, in at least one aspect,

wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of the beam source with respect to the substrate, the system further comprising:

an ion beam source scanner to scan the ion beam source with respect to the substrate.

2. The system of claim 1 , wherein the substrate stage comprises a scanner to scan the substrate with respect to at least one of the ion beam source and the radical beam source.

3. The system of claim 1 , further comprising:

a radical beam source scanner to scan the radical beam source with respect to the substrate.

4. The system of claim 1 , further comprising:

a radical beam source scanner to scan the radical beam source with respect to the substrate.

5. The system of claim 1 , wherein the ion beam source is rotatable with respect to a main plane of the substrate stage.

6. The system of claim 1 , wherein the radical beam source is rotatable with respect to a main plane of the substrate stage.

7. The system of claim 4 , wherein the radical beam source and the ion beam source are rotatable with respect to a main plane of the substrate stage.

8. A system, comprising:

a substrate stage to support a substrate;

a plurality of beam sources, comprising:

an ion beam source, the ion beam source arranged to direct an ion beam to the substrate; and

a radical beam source, the radical beam source arranged to direct a radical beam to the substrate;

a controller arranged for controlling the ion beam source and the radical beam source to operate independently of one another, in at least one aspect,

wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of the beam source with respect to the substrate, the system further comprising:

a radical beam source scanner to scan the radical beam source with respect to the substrate.

9. The system of claim 8 , further comprising:

an ion beam source scanner to scan the ion beam with respect to the substrate.

10. The system of claim 8 , further comprising a radical generator arranged to generate radicals for the radical beam source, the radical generator comprising an RF plasma source, a thermal source, an electron beam source, or a hot cathode source.

11. The system of claim 8 , wherein the radical beam source and the ion beam source are rotatable with respect to a main plane of the substrate stage.

12. A system, comprising:

a substrate stage to support a substrate;

a plurality of beam sources, comprising:

an ion beam source, the ion beam source arranged to direct an ion beam to the substrate; and

a radical beam source, the radical beam source arranged to direct a radical beam to the substrate;

a controller arranged for controlling the ion beam source and the radical beam source to operate independently of one another, in at least one aspect,

wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of the beam source with respect to the substrate, wherein the ion beam source is configured to generate a ribbon ion beam, and wherein the radical beam source is configured to generate a ribbon radical beam.

13. The system of claim 12 , further comprising a scanning system, the scanning system including at least one of a substrate scanner, ion beam source scanner, and radical beam source scanner.

14. The system of claim 12 , wherein the substrate stage is disposed in a process chamber, the system further comprising a barrier, extending within the process chamber and disposed between the ion beam source and the radical beam source.

15. The system of claim 12 , wherein the radical beam source and the ion beam source are rotatable with respect to a main plane of the substrate stage.

16. A system, comprising:

a substrate stage to support a substrate;

a plurality of beam sources, comprising:

an ion beam source, the ion beam source arranged to direct an ion beam to the substrate; and

a radical beam source, the radical beam source arranged to direct a radical beam to the substrate;

a controller arranged for controlling the ion beam source and the radical beam source to operate independently of one another, in at least one aspect,

wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of the beam source with respect to the substrate, wherein the substrate stage is disposed in a process chamber, the system further comprising a barrier, extending within the process chamber and disposed between the ion beam source and the radical beam source.

17. The system of claim 16 , wherein the radical beam source and the ion beam source are rotatable with respect to a main plane of the substrate stage.

18. The system of claim 16 , further comprising a scanning system, the scanning system including at least one of a substrate scanner, ion beam source scanner, and radical beam source scanner.

19. The system of claim 16 , wherein the ion beam source is configured to generate a ribbon ion beam, and wherein the radical beam source is configured to generate a ribbon radical beam.