IP Library › Granted Patent US 11,730,006
Granted Patent B2
US 11,730,006 · App. 17/096,616 · Granted Aug 15, 2023

Organic light emitting device and display device using the same

Inventors: Gyeong-Woo Kim (Seoul, KR); Hong-Seok Choi (Seoul, KR); Seung-Ryong Joung (Seoul, KR); Yoon-Deok Han (Yongin-si, KR); Jun-Ho Lee (Seoul, KR); Ji-Seon Jang (Suwon-si, KR)
Assignee: LG Display Co., Ltd.
H10K50/11C09K11/06H10K50/12H10K50/13H10K2101/10H10K2101/90H10K2102/361
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Quick Facts
Patent No.
US 11,730,006
App. No.
17/096,616
Granted
Aug 15, 2023
Kind
B2
Abstract

Disclosed are an organic light emitting device and a display device using the same in which a light emitting layer includes a host and a plurality of dopants. In the light emitting layer, energy is transferred from a host and other dopants to one dopant by energy transfer system, thus it is possible to increase luminous efficacy of a single color and to increase lifetime of emission.

Claims (72)

1. An organic light emitting device, comprising:

a first electrode;

a second electrode opposite the first electrode; and

a light emitting layer between the first electrode and the second electrode, wherein:

the light emitting layer is a single layer;

the light emitting layer comprises:

at least one host,

a first dopant to which energy is transferred from the host, and

a second dopant to which energy is transferred from the host and the first dopant;

a thermally activated delayed fluorescence is generated through a reverse intersystem crossing transfer from a triplet excited state to a singlet excited state in the second dopant; and

an absorption spectrum of the second dopant and a photoluminescence (PL) spectrum of the first dopant overlap at least 15 nm or more.

2. The organic light emitting device according to claim 1 , wherein:

the first dopant includes a phosphorescent dopant and the second dopant includes a fluorescent dopant; and

in the light emitting layer, a main emission is generated from the second dopant.

3. The organic light emitting device according to claim 1 , wherein the thermally activated delayed fluorescence and a fluorescence emission are generated together when energy is emitted from the singlet excited state of the second dopant into a ground state.

4. The organic light emitting device according to claim 1 , wherein: a max wavelength of the absorption spectrum of the second dopant is longer than a minimum wavelength of the PL spectrum of the first dopant.

5. The organic light emitting device according to claim 1 , wherein the energy is transferred from the first dopant to the second dopant by overlapping the absorption spectrum of the second dopant with the PL spectrum of the first dopant.

6. The organic light emitting device according to claim 1 , wherein the PL spectrum of the first dopant is between a peak wavelength of the absorption spectrum of the second dopant and an emission peak wavelength of a PL spectrum of the second dopant.

7. The organic light emitting device according to claim 1 , wherein an emission peak of the PL spectrum of the first dopant has a difference within 30 nm from an emission peak of a PL spectrum of the second dopant.

8. The organic light emitting device according to claim 1 , wherein the second dopant has a singlet energy level having a difference of 0.4 eV or less with a triplet energy level of the second dopant.

9. The organic light emitting device according to claim 1 , wherein a Förster energy transfer is bigger than a Dexter energy transfer in an energy transfer from the first dopant to the second dopant.

10. The organic light emitting device according to claim 1 , wherein the reverse intersystem crossing transfer from the triplet excited state to the singlet excited state in the second dopant is proportional to a Dexter energy from the host and the first dopant to the second dopant, and an energy of triplet excitons generated in the second dopant.

11. The organic light emitting device according to claim 1 , wherein:

a triplet energy state of the host is higher than or equal to a triplet energy state of the first dopant; and

the triplet energy state of the first dopant is higher than or equal to the triplet energy state of the second dopant.

12. The organic light emitting device according to claim 11 , wherein the triplet energy state of the first dopant is higher than or equal to the single energy state of the second dopant.

13. The organic light emitting device according to claim 11 , wherein a first difference between the singlet energy state and the triplet energy state of the second dopant is smaller than a second difference between the singlet energy state and the triplet energy state of the host and a third difference between the singlet energy state and the triplet energy state of the first dopant, respectively.

14. The organic light emitting device according to claim 1 , further comprising at least one common layer between the first electrode and the light emitting layer, and between the second electrode and the light emitting layer,

wherein the at least one common layer contacting the light emitting layer comprises a material having a triplet energy level higher than or equal to a triplet energy level of the at least one host.

15. The organic light emitting device according to claim 1 , wherein the light emitting layer comprises:

50 wt % or more of the at least one host;

1 wt % to 40 wt % of the first dopant; and

0.01 wt % to 10 wt % of the second dopant.

16. The organic light emitting device according to claim 1 , wherein the host comprises a plurality of hosts having different carrier transport characteristics.

17. A display device, comprising:

a substrate having a plurality of subpixels;

a thin film transistor in each of the subpixels; and

an organic light emitting device in each of the subpixels connected to the thin film transistor,

wherein the organic light emitting device includes a first electrode and a second electrode arranged opposite to each other, and at least one light emitting layer between the first and second electrodes,

wherein the at least one light emitting layer as a single layer includes:

at least one host;

a first dopant to which energy is transferred from the host; and

a second dopant to which energy is transferred from the host and the first dopant,

wherein a thermally activated delayed fluorescence is generated through a reverse intersystem crossing transfer from a triplet excited state to a singlet excited state in the second dopant; and

wherein an absorption spectrum of the second dopant and a PL spectrum of the first dopant overlap at least 15 nm or more.

18. The display device according to claim 17 , wherein:

the organic light emitting device includes a plurality of stacks divided by a charge generation layer therebetween,

each of the stacks includes at least one common layer, and

the at least one light emitting layer is in at least one stack among the plurality of stacks.

19. The display device according to claim 17 , wherein:

the first dopant includes a phosphorescent dopant and the second dopant includes a fluorescent dopant, and

in the light emitting layer, a main emission is generated from the second dopant.

20. The display device according to claim 17 , wherein the thermally activated delayed fluorescence and a fluorescence emission are generated together when energy is emitted from the singlet excited state of the second dopant into a ground state.

21. The display device according to claim 17 , wherein a max wavelength of the absorption spectrum of the second dopant is longer than a minimum wavelength of the PL spectrum of the first dopant.

22. A display device, comprising:

a substrate having a plurality of subpixels;

a thin film transistor in each of the subpixels; and

an organic light emitting device in each of the subpixels connected to the thin film transistor,

wherein the organic light emitting device includes a first electrode and a second electrode arranged opposite to each other, a plurality of stacks between the first electrode and the second electrode,

wherein the stack includes a first blue emitting stack, a long-wavelength light emitting stack, and a charge generation layer between the first blue light emitting stack and the long-wavelength light emitting stack,

wherein the first blue emitting stack includes at least one blue light emitting layer, and the long-wavelength light emitting stack emits light of wavelengths longer than blue wavelength, and

wherein the at least one blue light emitting layer includes:

at least one host;

a first dopant to which energy is transferred from the host; and

a second dopant to which energy is transferred from the host and the first dopant, and

wherein a thermally activated delayed fluorescence is generated through a reverse intersystem crossing transfer from a triplet excited state to a singlet excited state in the second dopant.

23. The display device according to claim 22 , further comprising a plurality of color filter layers under the first electrode or on the second electrode to emit light of different colors in the respective subpixels.

24. The display device according to claim 22 , wherein:

the long-wavelength light emitting stack includes a red light emitting layer and a green light emitting layer,

at least one of the red light emitting layer and the green light emitting layer includes a host and a plurality of dopants, and

an energy is transferred from the host and dopants to one dopant.

25. The display device according to claim 22 , wherein the plurality of stacks includes a plurality of first blue light emitting stacks.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 17, 2020
From: KIM, GYEONG-WOO; CHOI, HONG-SEOK; JOUNG, SEUNG-RYONG; HAN, YOON-DEOK; LEE, JUN-HO; JANG, JI-SEON
To: LG DISPLAY CO., LTD.
Reel/Frame 054448/0121 →
Priority Claims (1)
KR 10-2019-0147065 · Nov 15, 2019 · national
Continuity (1)
Related Publication 20210151703A1 · May 20, 2021