Method for forming a common electrode of a plurality of optoelectronic devices

1. A method for forming a common electrode with a plurality of optoelectronic devices each comprising a front face and a rear face connected by a flank, the method comprising the steps of:

a) providing a support substrate on a main face of which, rest, by a rear face thereof, the plurality of optoelectronic devices separated by trenches, the trenches being delimited by the flanks of the optoelectronic devices and a bottom at the main face;

b) forming a dielectric layer by covering the front faces, the flanks, and the bottom of the trenches, the dielectric layer having a thickness E1 and a thickness E2, which is less than the thickness E1, at, respectively, the front faces and the flanks;

c) wet etching a thickness E3 of the dielectric layer, the thickness E3 being less than the thickness E1, so as to uncover the flanks at a first section of the trenches and keep at least partially the dielectric layer on the front faces;

d) forming a metal layer, by covering the trenches and the front faces; and

e) performing a mechanochemical polishing of the metal layer, the polishing stopping on a portion of the dielectric layer kept by the covering the front faces at the end of step c), the metal layer remaining in the trenches forming the common electrode,

wherein each trench comprises, from the bottom and adjacent to the first section, a second section, the first section and the second section extending, respectively, according to a first height and a second height, the first section leading to a plane formed by the front faces of the optoelectronic devices, and

wherein step b) is preceded by a step b0) of forming, by a compliant deposition technique, a passivation layer by covering the front faces, the flanks, and the bottom of the trenches, the step c) also allowing for removal of the passivation layer at the first section.

2. The method according to claim 1 , wherein the thickness E1 is at least 2 times greater than the thickness E2.

3. The method according to claim 1 , wherein the step b0) is performed by atomic layer deposition.

4. The method according to claim 1 , wherein the passivation layer comprises at least materials chosen from SiO 2 and Al 2 O 3 .

5. The method according to claim 1 , wherein the passivation layer has a thickness between 5 nm and 30 nm.

6. The method according to claim 1 , wherein the dielectric layer is formed by a plasma-activated chemical vapour deposition technique.

7. The method according to claim 1 , wherein the dielectric layer comprises at least one of the materials chosen from SiO 2 and Si 3 N 4 .

8. The method according to claim 1 , wherein the step a) comprises a transfer of a stack of layers, formed on a seed substrate, on the main face of the support substrate.

9. The method according to claim 8 , wherein the transfer of the stack of layers is followed by formation of trenches that extend over an entire thickness of the stack of layers.

10. The method according to claim 9 , wherein the formation of trenches implements a hard mask that is removed before performing the step b).

11. The method according to claim 1 , wherein the optoelectronic devices are light emitting diodes that comprise from the front face thereof to the rear face thereof, a first N-doped semiconductor layer, an assembly of emitting layers, and a second P-doped semiconductor layer, the first height being less than or equal to a thickness of the N-doped semiconductor layer.

12. The method according to claim 11 , wherein the support substrate comprises, on the main face thereof, an integrated circuit configured to individually address each of the electronic devices.