Capacitors of semiconductor device capable of operating in high frequency operation environment
Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.
1. A capacitor comprising:
a first electrode layer;
a dielectric layer on the first electrode layer; and
a second electrode layer on the dielectric layer,
wherein the dielectric layer comprises a plurality of unit dielectric layers sequentially stacked and configured to be in contact with each other, a first unit dielectric layer of the plurality of unit dielectric layers comprises two sub-dielectric layers, and a second unit dielectric layer of the plurality of unit dielectric layers comprises two sub-dielectric layers,
wherein the two sub-dielectric layers each comprise comprising a first sub-dielectric layer and a second sub-dielectric layer, the first sub-dielectric layer and the second sub-dielectric layer having different dielectric constants and conductivities, and are connected in series,
wherein the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer as a result of a conductivity difference between the first and second sub-dielectric layers, and
wherein thicknesses of the plurality of unit dielectric layers are the same with each other.
2. The capacitor of claim 1 , wherein the difference in conductivity between one of the first and second sub-dielectric layers and the other one is 10 times or more.
3. The capacitor of claim 1 , wherein the dielectric layer has a dielectric constant of 1,000 or less.
4. The capacitor of claim 1 , wherein a sub-dielectric layer of the first and second sub-dielectric layers, having a lower conductivity, has a dielectric constant greater than that of the other sub-dielectric layer, having higher conductivity.
5. The capacitor of claim 1 , wherein the dielectric layer comprises 2 to 4 unit dielectric layers that are sequentially stacked.
6. The capacitor of claim 1 , wherein one of the first and second sub-dielectric layers includes a non-perovskite structure, and the other sub-dielectric layer includes an ABO 3 -based perovskite structure.
7. The capacitor of claim 6 , wherein the non-perovskite structure comprises a metal oxide layer including one of Hf, Zr, Nb, and Al.
8. The capacitor of claim 6 , wherein, in ABO 3 ,
‘A’ is one of Sr, Ba, Bi, and La, and
‘B’ is one of Ti, Ta, Ru, Hf, Zr, and Mo.
9. The capacitor of claim 1 , wherein the dielectric layer comprises one of a ferroelectric layer, a paraelectric layer, and an anti-ferroelectric layer.
10. The capacitor of claim 1 , wherein the dielectric layer has a thickness of about 12 nm or less.
11. The capacitor of claim 10 , wherein the dielectric layer has a thickness of about 10 nm or less.
12. The capacitor of claim 10 , wherein the dielectric layer has a dielectric constant in a range of about 100 to about 1,000.
13. The capacitor of claim 1 , wherein the dielectric layer has a thickness of about 5 nm or less and has a dielectric constant of about 50 to about 100.
14. The capacitor of claim 1 , wherein the first sub-dielectric layer has a first thickness and the second sub-dielectric layer has a second thickness,
wherein the first thickness is less than the second thickness, a dielectric constant of the first sub-dielectric layer is greater than a dielectric constant of the second sub-dielectric layer, and a conductivity of the first sub-dielectric layer is 10 or more times greater than a conductivity of the second sub-dielectric layer.
15. The capacitor of claim 1 , wherein an operation frequency-capacitance relationship of the capacitor exhibits a constant capacitance at operation frequencies of up 10 6 hertz or more.