Processing Chamber With Multiple Plasma Units
Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.
1 . A processing chamber comprising:
a lid and sidewalls defining an internal volume;
a remote plasma unit in the internal volume;
a direct plasma unit in the internal volume; and
at least one electrode,
wherein the remote plasma unit generates a remote plasma and the direct plasma unit generates a direct plasma.
2 . The processing chamber of claim 1 , further comprising an ion filter separating the remote plasma unit and the direct plasma unit.
3 . The processing chamber of claim 2 , wherein the ion filter comprises a plurality of apertures.
4 . The processing chamber of claim 3 , wherein the ion filter is a showerhead.
5 . The processing chamber of claim 1 , further comprising a pedestal.
6 . The processing chamber of claim 5 , wherein the pedestal comprises the at least one electrode.
7 . The processing chamber of claim 5 , wherein the at least one electrode is positioned in electrical communication with the remote plasma unit.
8 . The processing chamber of claim 1 , further comprising an inductively coupled plasma (ICP) coil.
9 . The processing chamber of claim 8 , wherein the ICP coil is positioned in electrical communication with the remote plasma unit.
10 . The processing chamber of claim 1 , further comprising a controller.
11 . The processing chamber of claim 10 , wherein the controller comprises one or more of a central processing unit (CPU), a memory, inputs/outputs (I/O), and support circuits.
12 . A processing method comprising: exposing a substrate to a remote plasma and exposing the substrate to a direct plasma.
13 . The processing method of claim 12 , wherein exposing the substrate to the remote plasma and to the direct plasma occurs sequentially.
14 . The processing method of claim 12 , wherein exposing the substrate to the remote plasma and to the direct plasma occurs simultaneously.
15 . The processing method of claim 12 , wherein exposing the substrate to the remote plasma and to the direct plasma cleans or treats the substrate.
16 . The processing method of claim 12 , further comprising exposing the substrate to at least one precursor to form a film on the substrate.
17 . The processing method of claim 12 , wherein the substrate comprises one or more of a trench, a via, or a peak.
18 . The processing method of claim 17 , wherein the substrate comprises one or more of a residue or a native oxide thereon.
19 . A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing chamber, causes the processing chamber to perform operations of:
exposing substrate to a remote plasma; and
exposing the substrate to a direct plasma.
20 . The non-transitory computer readable medium of claim 19 , further including instructions that, when executed by a controller of a processing chamber causes the processing chamber to perform the operations of: exposing the substrate to at least one precursor to form a film on the substrate.