Semiconductor devices including two-dimensional material and methods of fabrication thereof
View Patent ↗According to embodiments of the present disclosure, two-dimensional (2D) materials may be used as nanosheet channels for multi-channel transistors. Nanosheet channels made two-dimensional (2D) materials can achieve the same drive current at smaller dimensions and/or fewer number of channels, therefore enable scaling down and/or boost derive current. Embodiments of the present disclosure also provide a solution of P-type and N-type balancing in a device without increasing footprint of the device.
1. A semiconductor device, comprising:
a first two-dimensional (2D) material layer having a first end and a second end;
a first source/drain feature in contact with the first end of the first two-dimensional (2D) material layer;
a second source/drain feature in contact with the second end of the first two-dimensional (2D) material layer; and
a gate electrode layer surrounding the first two-dimensional (2D) material layer,
wherein the first end of the first two-dimensional (2D) material layer extends into the first source/drain feature and is in contact with the first source/drain feature on three surfaces.
2. The semiconductor device of claim 1 , further comprising a second two-dimensional (2D) material layer in contact with the first and second source/drain features, and the gate electrode layer surrounds the second two-dimensional (2D) material layer.
3. The semiconductor device of claim 1 , wherein each of the first and second source/drain features comprises a metal, a bi-metal, a metal oxide, or a combination thereof.
4. The semiconductor device of claim 1 , further comprising spacers disposed between the gate electrode layer and the first and second source/drain features.
5. The semiconductor device of claim 1 , further comprising two interfacial layers,
wherein the first two-dimensional (2D) material layer is sandwiched between the two interfacial layers.
6. The semiconductor device of claim 5 , further comprising two high-k dielectric layers, wherein the two interfacial layers and the first two-dimensional (2D) material layer are sandwiched between the two high-k dielectric layers.
7. The semiconductor device of claim 5 , further comprising a high-k dielectric layer surrounding the two interfacial layers and the first two-dimensional (2D) material layer.
8. The semiconductor device of claim 1 , further comprising:
an interfacial layer surrounding the first two-dimensional (2D) material layer; and
a high-k dielectric layer surrounding the interfacial layer.
9. A semiconductor device, comprising:
a first transistor comprising:
a first source;
a first drain;
a first multi-channel connecting the first source and first drain, wherein the first multi-channel comprises two or more two-dimensional (2D) material layers, and an end portion of each of the two or more two-dimensional (2D) material layers is in contact with the source on three surfaces; and
a second transistor comprising:
a second source;
a second drain; and
a second multi-channel connecting the second source and second drain, wherein the second channel comprises two or more semiconductor layers.
10. The semiconductor device of claim 9 , wherein the first transistor is a p-type device and the second transistor is an n-type device.
11. The semiconductor device of claim 10 , wherein the first source and the first drain including a metal, a bi-metal, a metal oxide, or a combination thereof.
12. The semiconductor device of claim 10 , further comprising:
an interfacial layer in contact with the first multi-channel; and
a high-k dielectric layer in contact with the interfacial layer.
13. The semiconductor device of claim 12 , wherein the high-k dielectric layer surrounds the interfacial layer and the two or more two-dimensional (2D) material layers.
14. The semiconductor device of claim 13 , wherein the interfacial layer surrounds each of the two or more two-dimensional (2D) material layers.
15. A method for forming a semiconductor device, comprising:
alternately depositing two or more channel stacks and two or more sacrificial channel layers, wherein each of the two or more sacrificial channel layers is deposited between the channel stacks, and depositing each of the two or more channel stacks comprises depositing a two-dimensional (2D) material layer;
etching through the two or more channel stacks and the two or more sacrificial channel layers to form a fin structure;
removing the two or more sacrificial channel layers to form two or more channels from the two or more channel stacks; and
depositing a gate electrode layer around the two or more channels.
16. The method of claim 15 , further comprising:
forming a sacrificial gate structure over the fin structure;
forming sidewall spacers on sidewalls of the sacrificial gate structure;
recess etching the fin structure outside the sidewall spacers and the sacrificial gate structure; and
forming sacrificial source/drain structures.
17. The method of claim 16 , further comprising, prior to forming the sacrificial source/drain features,
etching end portions of the sacrificial channel layers to form inner spacer cavities; and
forming inner spacers in the inner spacer cavities.
18. The method of claim 17 , further comprising:
removing the sacrificial source/drain features;
etching end portions each channel stack to remove an interfacial layer and a high-k dielectric layer from the end portions; and
forming replacement source/drain features so that the two-dimensional (2D) material layers extend into the replacement source/drain features.
19. The method of claim 15 , wherein depositing the two or more sacrificial channel layers comprising depositing two or more dielectric layers.
20. The method of claim 15 , wherein depositing each of the two or more channel stacks further comprises:
depositing an interfacial layer on the two-dimensional (2D) material layer; and
depositing a high-k dielectric layer on the interfacial layer.