Method and apparatus for producing a high gain free electron laser using a large energy spread electron beam

1. A system, comprising:

an electron beam source configured to provide an electron beam; and

at least one undulator system configured to produce free-electron laser (FEL) radiation, the at least one undulator system including a plurality of undulators and at least one optical section between the plurality of undulators, the plurality of undulators configured to induce the electron beam to microbunch and radiate coherently, the at least one optical section configured to operate on the electron beam and the FEL radiation provided by the electron beam, the at least one undulator system configured such that an input electron beam direction for the electron beam entering the at least one undulator system is within five degrees of an output electron beam direction for the electron beam exiting the at least one undulator system.

2. The system of claim 1 , wherein the at least one optical section is further configured to steer and focus the FEL radiation.

3. The system of claim 2 , wherein the at least one optical section is configured to focus the FEL radiation to phase match the FEL radiation with an electron beam envelope and to modify a FEL radiation path length through the at least one undulator system, thereby tuning a relative radiation path length difference to that of the electron beam path.

4. The system of claim 1 , wherein the at least one optical section is further configured to modify an electron beam density and adjust an electron energy-dependent beam path length through the at least one undulator system.

5. The system of claim 1 , wherein each of the at least one optical section further includes:

at least one minor configured to focus the FEL radiation and modify a FEL radiation path length through the optical section; and

at least one magnetic bending component configured to focus the electron beam and modify an electron beam energy-dependent path length through the optical section.

6. The system of claim 5 , wherein the at least one magnetic bending component is positioned to deflect the electron beam from at least one location for the at least one minor.

7. The system of claim 1 , wherein an equilibrium relative energy spread of the electron beam is not less than a free election laser ρ parameter of the system.

8. The system of claim 1 , further comprising:

an electron storage ring configured for emission of the FEL radiation, the at least one undulator system being incorporated in the electron storage ring; and

wherein the electron beam source includes an electron injector configured to insert the electron beam into the electron storage ring.

9. The system of claim 1 , wherein the at least one undulator system is an isochronous undulator system for the electron beam.

10. The system of claim 1 , further comprising:

an exit aperture configured to output a portion of the FEL radiation at an extreme ultraviolet wavelength range produced by an interaction of the electron beam through the at least one undulator system.

11. A method, comprising:

injecting an electron beam into a storage system; and

passing the electron beam through at least one undulator system configured to produce free-electron laser (FEL) radiation, the at least one undulator system including a plurality of undulators and at least one optical section between the plurality of undulators, the plurality of undulators inducing the electron beam to microbunch and radiate coherently, the at least one optical section operating on the electron beam and FEL radiation provided by the electron beam, the at least one undulator system being an isochronous undulator system for the electron beam.

12. The method of claim 11 , wherein the passing the electron beam through the at least one undulator system further includes:

using the at least one optical section to focus the FEL radiation to phase match the FEL radiation with an electron beam envelope and modify a FEL radiation path length through the at least one undulator system, thereby tuning a relative radiation path length difference to that of the electron beam path.

13. The method of claim 11 , wherein the using the at least one optical section further includes:

modifying an electron beam density and adjusting an electron beam energy-dependent path length through the at least one undulator system using the at least one optical section.

14. The method of claim 11 , wherein the passing the electron beam through the at least one undulator system further includes:

directing the electron beam through a path such that the FEL radiation traverses at least one mirror and such that the electron beam traverses at least one magnetic bending component, the at least one mirror being configured to focus the FEL radiation and modify a FEL radiation path length through the optical section and the at least one magnetic bending component being configured to focus the electron beam and modify an electron beam energy-dependent path length through the optical section.

15. The method of claim 11 , wherein an equilibrium relative energy spread of the electron beam is not less than a free election laser ρ parameter of the electron beam.

16. The method of claim 11 , wherein the passing the electron beam through the at least one undulator system further includes:

directing the electron beam through the at least one undulator system such that an input electron beam direction for the electron beam entering the at least one undulator system is within five degrees of an output electron beam direction for the electron beam exiting the at least one undulator system.

17. The method of claim 11 , further comprising:

outputting a portion of the FEL radiation through an exit aperture at an extreme ultraviolet wavelength range produced by an interaction of the electron beam through the at least one undulator system.