Source/drain EPI structure for device boost
A method includes providing a substrate, a semiconductor fin extending from the substrate, and a gate structure over the substrate and engaging the semiconductor fin; etching the semiconductor fin to form a source/drain trench; and epitaxially growing a source/drain feature in the source/drain trench, which includes epitaxially growing a first semiconductor layer having silicon germanium (SiGe); epitaxially growing a second semiconductor layer having SiGe above the first semiconductor layer; epitaxially growing a third semiconductor layer having SiGe over the second semiconductor layer; and epitaxially growing a fourth semiconductor layer having SiGe and disposed at a corner portion of the source/drain feature where the source/drain feature has a largest lateral dimension. Each of the first, second, third, and fourth semiconductor layers includes a p-type dopant, and the fourth semiconductor layer has a higher dopant concentration of the p-type dopant than each of the first, second, and third semiconductor layers.
1. A semiconductor structure, comprising:
a substrate;
a semiconductor fin extending from the substrate;
a source/drain feature over the semiconductor fin; and
a contact plug disposed on the source/drain feature, wherein the source/drain feature includes:
a first semiconductor layer having silicon germanium and disposed on the semiconductor fin,
a second semiconductor layer having silicon germanium above the first semiconductor layer and extending laterally wider than the semiconductor fin,
a third semiconductor layer having silicon germanium over the second semiconductor layer, and
a fourth semiconductor layer having silicon germanium and disposed at a corner portion of the source/drain feature where the source/drain feature has a largest lateral dimension,
wherein each of the first, the second, the third, and the fourth semiconductor layers includes a p-type dopant, and the fourth semiconductor layer has a higher dopant concentration of the p-type dopant than the first, the second, and the third semiconductor layers.
2. The semiconductor structure of claim 1 , wherein the p-type dopant includes boron.
3. The semiconductor structure of claim 1 , wherein a dopant concentration of the p-type dopant in the second semiconductor layer gradually increases and then gradually decreases as a thickness of the second semiconductor layer increases.
4. The semiconductor structure of claim 3 , wherein a ratio of germanium to silicon in the second semiconductor layer gradually increases as the thickness of the second semiconductor layer increases.
5. The semiconductor structure of claim 1 , wherein a dopant concentration of the p-type dopant in the third semiconductor layer gradually increases as a thickness of the third semiconductor layer increases.
6. The semiconductor structure of claim 1 , wherein a dopant concentration of the p-type dopant in the fourth semiconductor layer gradually increases and a ratio of germanium to silicon in the fourth semiconductor layer gradually decreases as a thickness of the fourth semiconductor layer increases.
7. The semiconductor structure of claim 1 , wherein the semiconductor fin includes a base portion and an upper portion on the base portion, the base portion of semiconductor fin and the substrate include a same material, and the upper portion of the semiconductor fin includes a different material than the base portion of the semiconductor fin, wherein the source/drain feature is disposed on the upper portion of the semiconductor fin.
8. The semiconductor structure of claim 7 , wherein the base portion of the semiconductor fin includes silicon and the upper portion of the semiconductor fin includes silicon germanium.
9. A semiconductor structure, comprising:
a substrate;
a semiconductor fin extending from the substrate and having silicon germanium;
a source/drain feature over the semiconductor fin; and
a contact plug disposed on the source/drain feature, wherein the source/drain feature includes a first semiconductor layer, a second semiconductor layer above the first semiconductor layer, a third semiconductor layer over the second semiconductor layer, and a fourth semiconductor layer disposed at a corner portion of the source/drain feature where the source/drain feature has a largest lateral dimension,
wherein each of the first, the second, the third, and the fourth semiconductor layers includes silicon germanium doped with boron, the fourth semiconductor layer has a higher boron doping concentration than the first, the second, and the third semiconductor layers, and a boron doping concentration in the fourth semiconductor layer gradually increases as a thickness of the fourth semiconductor layer increases.
10. The semiconductor structure of claim 9 , wherein a ratio of germanium to silicon in the fourth semiconductor layer gradually decreases as the thickness of the fourth semiconductor layer increases.
11. The semiconductor structure of claim 9 , wherein a boron doping concentration in the third semiconductor layer gradually increases and a ratio of germanium to silicon in the third semiconductor layer remains substantially constant as a thickness of the third semiconductor layer increases.
12. The semiconductor structure of claim 9 , wherein a ratio of germanium to silicon in the second semiconductor layer gradually increases as the thickness of the second semiconductor layer increases.
13. The semiconductor structure of claim 12 , wherein a boron concentration in the second semiconductor layer gradually increases and then gradually decreases as a thickness of the second semiconductor layer increases.
14. A semiconductor structure, comprising:
a substrate;
a semiconductor fin extending from the substrate, wherein the semiconductor fin includes a base portion and an upper portion on the base portion, the upper portion of the semiconductor fin includes silicon germanium, the base portion of the semiconductor fin includes a different material than the upper portion of the semiconductor fin;
a source/drain feature over the semiconductor fin; and
a contact plug disposed on the source/drain feature, wherein the source/drain feature includes a first semiconductor layer, a second semiconductor layer above the first semiconductor layer, a third semiconductor layer over the second semiconductor layer, and a fourth semiconductor layer disposed at corners of the source/drain feature,
wherein each of the first, the second, the third, and the fourth semiconductor layers includes silicon germanium doped with a p-type dopant, the fourth semiconductor layer has a higher doping concentration of the p-type dopant than the first, the second, and the third semiconductor layers, and a dopant concentration of the p-type dopant in the second semiconductor layer gradually increases and then gradually decreases as a thickness of the second semiconductor layer increases.
15. The semiconductor structure of claim 14 , wherein the p-type dopant includes boron.
16. The semiconductor structure of claim 14 , wherein a ratio of germanium to silicon in the second semiconductor layer gradually increases as the thickness of the second semiconductor layer increases.
17. The semiconductor structure of claim 14 , wherein a dopant concentration of the p-type dopant in the third semiconductor layer gradually increases as a thickness of the third semiconductor layer increases.
18. The semiconductor structure of claim 17 , wherein a ratio of germanium to silicon in the third semiconductor layer remains substantially constant as the thickness of the third semiconductor layer increases.
19. The semiconductor structure of claim 14 , wherein a doping concentration of the p-type dopant in the fourth semiconductor layer gradually increases as a thickness of the fourth semiconductor layer increases.
20. The semiconductor structure of claim 19 , wherein a ratio of germanium to silicon in the fourth semiconductor layer gradually decreases as the thickness of the fourth semiconductor layer increases.